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    Home > Products  > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
    TK10E80W,S1X

    TK10E80W,S1X

    PB-F POWER MOSFET TRANSISTOR TO-

    Toshiba Semiconductor and Storage

    		 2,460
    RFQ
    		TK10E80W,S1X

    Datasheet

         		DTMOSIV TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 800 V 9.5A (Ta) 10V 550mOhm @ 4.8A, 10V 4V @ 450µA 19 nC @ 10 V ±20V 1150 pF @ 300 V - 130W (Tc) 150°C - - Through Hole TO-220
    TK10A60W,S4VX

    TK10A60W,S4VX

    MOSFET N-CH 600V 9.7A TO220SIS

    Toshiba Semiconductor and Storage

    		 8,958
    RFQ
    		TK10A60W,S4VX

    Datasheet

         		DTMOSIV TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 9.7A (Ta) 10V 380mOhm @ 4.9A, 10V 3.7V @ 500µA 20 nC @ 10 V ±30V 700 pF @ 300 V - 30W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
    TK10A80W,S4X

    TK10A80W,S4X

    MOSFET N-CH 800V 9.5A TO220SIS

    Toshiba Semiconductor and Storage

    		 9,560
    RFQ
    		TK10A80W,S4X

    Datasheet

         		DTMOSIV TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 800 V 9.5A (Ta) 10V 550mOhm @ 4.8A, 10V 4V @ 450µA 19 nC @ 10 V ±20V 1150 pF @ 300 V - 40W (Tc) 150°C - - Through Hole TO-220SIS
    TK7E80W,S1X

    TK7E80W,S1X

    MOSFET N-CH 800V 6.5A TO220

    Toshiba Semiconductor and Storage

    		 6,656
    RFQ
    		TK7E80W,S1X

    Datasheet

         		DTMOSIV TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 800 V 6.5A (Ta) 10V 950mOhm @ 3.3A, 10V 4V @ 280µA 13 nC @ 10 V ±20V 700 pF @ 300 V - 110W (Tc) 150°C - - Through Hole TO-220
    TK14E65W,S1X

    TK14E65W,S1X

    MOSFET N-CH 650V 13.7A TO220

    Toshiba Semiconductor and Storage

    		 9,262
    RFQ
    		TK14E65W,S1X

    Datasheet

         		DTMOSIV TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 13.7A (Ta) 10V 250mOhm @ 6.9A, 10V 3.5V @ 690µA 35 nC @ 10 V ±30V 1300 pF @ 300 V - 130W (Tc) 150°C (TJ) - - Through Hole TO-220
    TK20A60W5,S5VX

    TK20A60W5,S5VX

    MOSFET N-CH 600V 20A TO220SIS

    Toshiba Semiconductor and Storage

    		 4,856
    RFQ
    		TK20A60W5,S5VX

    Datasheet

         		DTMOSIV TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 20A (Ta) 10V 175mOhm @ 10A, 10V 4.5V @ 1mA 55 nC @ 10 V ±30V 1800 pF @ 300 V - 45W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
    TK4R9E15Q5,S1X

    TK4R9E15Q5,S1X

    150V UMOS10-HSD TO-220 4.9MOHM

    Toshiba Semiconductor and Storage

    		 5,164
    RFQ
    		TK4R9E15Q5,S1X

    Datasheet

         		U-MOSX-H TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 150 V 120A (Tc) 8V, 10V 4.9mOhm @ 50A, 10V 4.5V @ 2.2mA 96 nC @ 10 V ±20V 7820 pF @ 75 V - 300W (Tc) 175°C - - Through Hole TO-220
    TK18A50D(STA4,Q,M)

    TK18A50D(STA4,Q,M)

    MOSFET N-CH 500V 18A TO220SIS

    Toshiba Semiconductor and Storage

    		 4,948
    RFQ
    		TK18A50D(STA4,Q,M)

    Datasheet

         		π-MOSVII TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 500 V 18A (Ta) 10V 270mOhm @ 9A, 10V 4V @ 1mA 45 nC @ 10 V ±30V 2600 pF @ 25 V - 50W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
    IPB240N04S41R0ATMA1

    IPB240N04S41R0ATMA1

    MOSFET N-CH 40V 240A TO263-7

    Infineon Technologies

    		 3,680
    RFQ
    		IPB240N04S41R0ATMA1

    Datasheet

         		OptiMOS™ TO-263-7, D2PAK (6 Leads + Tab) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 240A (Tc) 10V 1mOhm @ 100A, 10V 4V @ 180µA 221 nC @ 10 V ±20V 17682 pF @ 25 V - 231W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PG-TO263-7-3
    IPI90R500C3XKSA2

    IPI90R500C3XKSA2

    MOSFET N-CH 900V 11A TO262-3

    Infineon Technologies

    		 6,252
    RFQ
    		IPI90R500C3XKSA2

    Datasheet

         		CoolMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Active N-Channel MOSFET (Metal Oxide) 900 V 11A (Tc) 10V 500mOhm @ 6.6A, 10V 3.5V @ 740µA 68 nC @ 10 V ±20V 1700 pF @ 100 V - 156W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO262-3-1
    TK19A45D(STA4,Q,M)

    TK19A45D(STA4,Q,M)

    MOSFET N-CH 450V 19A TO220SIS

    Toshiba Semiconductor and Storage

    		 9,372
    RFQ
    		TK19A45D(STA4,Q,M)

    Datasheet

         		π-MOSVII TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 450 V 19A (Ta) 10V 250mOhm @ 9.5A, 10V 4V @ 1mA 45 nC @ 10 V ±30V 2600 pF @ 25 V - 50W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
    TK080N60Z1,S1F

    TK080N60Z1,S1F

    600V DTMOS6 TO-247 80MOHM

    Toshiba Semiconductor and Storage

    		 3,214
    RFQ
    		TK080N60Z1,S1F

    Datasheet

         		DTMOSVI TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 30A (Ta) 10V 80mOhm @ 10.3A, 10V 4V @ 1.17mA 43 nC @ 10 V ±30V 2510 pF @ 300 V - 211W (Tc) 150°C - - Through Hole TO-247
    TK12A60W,S4VX

    TK12A60W,S4VX

    MOSFET N-CH 600V 11.5A TO220SIS

    Toshiba Semiconductor and Storage

    		 5,410
    RFQ
    		TK12A60W,S4VX

    Datasheet

         		DTMOSIV TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 11.5A (Ta) 10V 300mOhm @ 5.8A, 10V 3.7V @ 600µA 25 nC @ 10 V ±30V 890 pF @ 300 V - 35W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
    TK28E65W,S1X

    TK28E65W,S1X

    PB-F POWER MOSFET TRANSISTOR TO-

    Toshiba Semiconductor and Storage

    		 7,932
    RFQ
    		TK28E65W,S1X

    Datasheet

         		DTMOSIV TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 27.6A (Ta) 10V 110mOhm @ 13.8A, 10V 3.5V @ 1.6mA 75 nC @ 10 V ±30V 3000 pF @ 300 V - 230W (Tc) 150°C - - Through Hole TO-220
    TK25E60X5,S1X

    TK25E60X5,S1X

    MOSFET N-CH 600V 25A TO220

    Toshiba Semiconductor and Storage

    		 200
    RFQ
    		TK25E60X5,S1X

    Datasheet

         		DTMOSIV-H TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 25A (Ta) 10V 140mOhm @ 7.5A, 10V 4.5V @ 1.2mA 60 nC @ 10 V ±30V 2400 pF @ 300 V - 180W (Tc) 150°C (TJ) - - Through Hole TO-220
    TK25N60X5,S1F

    TK25N60X5,S1F

    MOSFET N-CH 600V 25A TO247

    Toshiba Semiconductor and Storage

    		 5,352
    RFQ
    		TK25N60X5,S1F

    Datasheet

         		DTMOSIV-H TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 25A (Ta) 10V 140mOhm @ 7.5A, 10V 4.5V @ 1.2mA 60 nC @ 10 V ±30V 2400 pF @ 300 V - 180W (Tc) 150°C (TJ) - - Through Hole TO-247
    TK20E60W,S1VX

    TK20E60W,S1VX

    MOSFET N-CH 600V 20A TO220

    Toshiba Semiconductor and Storage

    		 2,138
    RFQ
    		TK20E60W,S1VX

    Datasheet

         		DTMOSIV TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 20A (Ta) 10V 155mOhm @ 10A, 10V 3.7V @ 1mA 48 nC @ 10 V ±30V 1680 pF @ 300 V - 165W (Tc) 150°C (TJ) - - Through Hole TO-220
    TK110N65Z,S1F

    TK110N65Z,S1F

    POWER MOSFET TRANSISTOR TO-247(O

    Toshiba Semiconductor and Storage

    		 7,592
    RFQ
    		TK110N65Z,S1F

    Datasheet

         		DTMOSVI TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 24A (Ta) 10V 110mOhm @ 12A, 10V 4V @ 1.02mA 40 nC @ 10 V ±30V 2250 pF @ 300 V - 190W (Tc) 150°C - - Through Hole TO-247
    IPA65R110CFDXKSA2

    IPA65R110CFDXKSA2

    MOSFET N-CH 650V 31.2A TO220

    Infineon Technologies

    		 6,284
    RFQ
    		IPA65R110CFDXKSA2

    Datasheet

         		CoolMOS™ CFD2 TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 650 V 31.2A (Tc) 10V 110mOhm @ 12.7A, 10V 4.5V @ 1.3mA 118 nC @ 10 V ±20V 3240 pF @ 100 V - 34.7W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-FP
    TK28N65W,S1F

    TK28N65W,S1F

    MOSFET N-CH 650V 27.6A TO247

    Toshiba Semiconductor and Storage

    		 9,390
    RFQ
    		TK28N65W,S1F

    Datasheet

         		DTMOSIV TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 27.6A (Ta) 10V 110mOhm @ 13.8A, 10V 3.5V @ 1.6mA 75 nC @ 10 V ±30V 3000 pF @ 300 V - 230W (Tc) 150°C (TJ) - - Through Hole TO-247
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