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    Home > Products  > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
    TK9A55DA(STA4,Q,M)

    TK9A55DA(STA4,Q,M)

    MOSFET N-CH 550V 8.5A TO220SIS

    Toshiba Semiconductor and Storage

    		 6,196
    RFQ
    		TK9A55DA(STA4,Q,M)

    Datasheet

         		π-MOSVII TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 550 V 8.5A (Ta) 10V 860mOhm @ 4.3A, 10V 4V @ 1mA 20 nC @ 10 V ±30V 1050 pF @ 25 V - 40W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
    TK9A60D(STA4,Q,M)

    TK9A60D(STA4,Q,M)

    MOSFET N-CH 600V 9A TO220SIS

    Toshiba Semiconductor and Storage

    		 3,624
    RFQ
    		TK9A60D(STA4,Q,M)

    Datasheet

         		π-MOSVII TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 9A (Ta) 10V 830mOhm @ 4.5A, 10V 4V @ 1mA 24 nC @ 10 V ±30V 1200 pF @ 25 V - 45W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
    TK12Q60W,S1VQ

    TK12Q60W,S1VQ

    MOSFET N CH 600V 11.5A IPAK

    Toshiba Semiconductor and Storage

    		 5,710
    RFQ
    		TK12Q60W,S1VQ

    Datasheet

         		DTMOSIV TO-251-3 Stub Leads, IPAK Tube Active N-Channel MOSFET (Metal Oxide) 600 V 11.5A (Ta) 10V 340mOhm @ 5.8A, 10V 3.7V @ 600µA 25 nC @ 10 V ±30V 890 pF @ 300 V - 100W (Tc) 150°C (TJ) - - Through Hole IPAK
    TK12A50W,S5X

    TK12A50W,S5X

    PB-F POWER MOSFET TRANSISTOR TO-

    Toshiba Semiconductor and Storage

    		 5,796
    RFQ
    		TK12A50W,S5X

    Datasheet

         		DTMOSIV TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 500 V 11.5A (Ta) 10V 300mOhm @ 5.8A, 10V 3.7V @ 600µA 25 nC @ 10 V ±30V 890 pF @ 300 V - 35W (Tc) 150°C - - Through Hole TO-220SIS
    TK7Q60W,S1VQ

    TK7Q60W,S1VQ

    MOSFET N-CH 600V 7A IPAK

    Toshiba Semiconductor and Storage

    		 9,678
    RFQ
    		TK7Q60W,S1VQ

    Datasheet

         		DTMOSIV TO-251-3 Stub Leads, IPAK Tube Active N-Channel MOSFET (Metal Oxide) 600 V 7A (Ta) 10V 600mOhm @ 3.5A, 10V 3.7V @ 350µA 15 nC @ 10 V ±30V 490 pF @ 300 V - 60W (Tc) 150°C (TJ) - - Through Hole IPAK
    IRF620STRRPBF

    IRF620STRRPBF

    MOSFET N-CH 200V 5.2A D2PAK

    Vishay Siliconix

    		 1,600
    RFQ
    		IRF620STRRPBF

    Datasheet

         		- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 200 V 5.2A (Tc) 10V 800mOhm @ 3.1A, 10V 4V @ 250µA 14 nC @ 10 V ±20V 260 pF @ 25 V - 3W (Ta), 50W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount D2PAK
    TK7A65D(STA4,Q,M)

    TK7A65D(STA4,Q,M)

    MOSFET N-CH 650V 7A TO220SIS

    Toshiba Semiconductor and Storage

    		 5,542
    RFQ
    		TK7A65D(STA4,Q,M)

    Datasheet

         		π-MOSVII TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 650 V 7A (Ta) 10V 980mOhm @ 3.5A, 10V 4V @ 1mA 24 nC @ 10 V ±30V 1200 pF @ 25 V - 45W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
    TK7A80W,S4X

    TK7A80W,S4X

    PB-F POWER MOSFET TRANSISTOR TO-

    Toshiba Semiconductor and Storage

    		 9,608
    RFQ
    		TK7A80W,S4X

    Datasheet

         		DTMOSIV TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 800 V 6.5A (Ta) 10V 950mOhm @ 3.3A, 10V 4V @ 280µA 13 nC @ 10 V ±20V 700 pF @ 300 V - 35W (Tc) 150°C - - Through Hole TO-220SIS
    TK6A60W,S4VX

    TK6A60W,S4VX

    MOSFET N-CH 600V 6.2A TO220SIS

    Toshiba Semiconductor and Storage

    		 2,054
    RFQ
    		TK6A60W,S4VX

    Datasheet

         		DTMOSIV TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 6.2A (Ta) 10V 750mOhm @ 3.1A, 10V 3.7V @ 310µA 12 nC @ 10 V ±30V 390 pF @ 300 V - 30W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
    TK10Q60W,S1VQ

    TK10Q60W,S1VQ

    MOSFET N-CH 600V 9.7A IPAK

    Toshiba Semiconductor and Storage

    		 6,776
    RFQ
    		TK10Q60W,S1VQ

    Datasheet

         		DTMOSIV TO-251-3 Stub Leads, IPAK Tube Active N-Channel MOSFET (Metal Oxide) 600 V 9.7A (Ta) 10V 430mOhm @ 4.9A, 10V 3.7V @ 500µA 20 nC @ 10 V ±30V 700 pF @ 300 V - 80W (Tc) 150°C (TJ) - - Through Hole IPAK
    DMNH4005SCT

    DMNH4005SCT

    MOSFET N-CH 40V 150A TO220AB

    Diodes Incorporated

    		 5,672
    RFQ
    		DMNH4005SCT

    Datasheet

         		- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 40 V 150A (Tc) 10V 4mOhm @ 20A, 10V 3V @ 250µA 48 nC @ 10 V 20V 2846 pF @ 20 V - 165W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
    TK13A45D(STA4,Q,M)

    TK13A45D(STA4,Q,M)

    MOSFET N-CH 450V 13A TO220SIS

    Toshiba Semiconductor and Storage

    		 9,666
    RFQ
    		TK13A45D(STA4,Q,M)

    Datasheet

         		π-MOSVII TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 450 V 13A (Ta) 10V 460mOhm @ 6.5A, 10V 4V @ 1mA 25 nC @ 10 V ±30V 1350 pF @ 25 V - 45W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
    TK8Q60W,S1VQ

    TK8Q60W,S1VQ

    MOSFET N-CH 600V 8A IPAK

    Toshiba Semiconductor and Storage

    		 6,270
    RFQ
    		TK8Q60W,S1VQ

    Datasheet

         		DTMOSIV TO-251-3 Stub Leads, IPAK Tube Active N-Channel MOSFET (Metal Oxide) 600 V 8A (Ta) 10V 500mOhm @ 4A, 10V 3.7V @ 400µA 18.5 nC @ 10 V ±30V 570 pF @ 300 V - 80W (Tc) 150°C (TJ) - - Through Hole IPAK
    DMTH10H005LCT

    DMTH10H005LCT

    MOSFET N-CH 100V 140A TO220AB

    Diodes Incorporated

    		 4,998
    RFQ
    		DMTH10H005LCT

    Datasheet

         		- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 100 V 140A (Tc) 10V 5mOhm @ 13A, 10V 3.5V @ 250µA 114 nC @ 10 V ±20V 3688 pF @ 50 V - 187W (Tc) -55°C ~ 150°C (TJ) Automotive AEC-Q101 Through Hole TO-220AB
    TK8A60W,S4VX

    TK8A60W,S4VX

    MOSFET N-CH 600V 8A TO220SIS

    Toshiba Semiconductor and Storage

    		 5,988
    RFQ
    		TK8A60W,S4VX

    Datasheet

         		DTMOSIV TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 8A (Ta) 10V 500mOhm @ 4A, 10V 3.7V @ 400µA 18.5 nC @ 10 V ±30V 570 pF @ 300 V - 30W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
    IPP339N20NM6AKSA1

    IPP339N20NM6AKSA1

    MOSFET

    Infineon Technologies

    		 9,076
    RFQ
    		IPP339N20NM6AKSA1

    Datasheet

         		OptiMOS™ 6 TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 200 V 6.8A (Ta), 39A (Tc) 10V, 15V 31.8mOhm @ 26A, 15V 4.5V @ 52µA 24 nC @ 10 V ±20V 1600 pF @ 100 V - 3.8W (Ta), 125W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3-1
    DMTH10H005SCT

    DMTH10H005SCT

    MOSFET N-CH 100V 140A TO220AB

    Diodes Incorporated

    		 8,020
    RFQ
    		DMTH10H005SCT

    Datasheet

         		- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 100 V 140A (Tc) 10V 5mOhm @ 13A, 10V 4V @ 250µA 111.7 nC @ 10 V ±20V 8474 pF @ 50 V - 187W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
    TK16E60W,S1VX

    TK16E60W,S1VX

    MOSFET N-CH 600V 15.8A TO220

    Toshiba Semiconductor and Storage

    		 8,260
    RFQ
    		TK16E60W,S1VX

    Datasheet

         		DTMOSIV TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 15.8A (Ta) 10V 190mOhm @ 7.9A, 10V 3.7V @ 790µA 38 nC @ 10 V ±30V 1350 pF @ 300 V - 130W (Tc) 150°C (TJ) - - Through Hole TO-220
    TK12E60W,S1VX

    TK12E60W,S1VX

    MOSFET N CH 600V 11.5A TO-220

    Toshiba Semiconductor and Storage

    		 3,456
    RFQ
    		TK12E60W,S1VX

    Datasheet

         		DTMOSIV TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 11.5A (Ta) 10V 300mOhm @ 5.8A, 10V 3.7V @ 600µA 25 nC @ 10 V ±30V 890 pF @ 300 V - 110W (Tc) 150°C (TJ) - - Through Hole TO-220
    TK12A60D(STA4,Q,M)

    TK12A60D(STA4,Q,M)

    MOSFET N-CH 600V 12A TO220SIS

    Toshiba Semiconductor and Storage

    		 5,622
    RFQ
    		TK12A60D(STA4,Q,M)

    Datasheet

         		π-MOSVII TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 12A (Ta) 10V 550mOhm @ 6A, 10V 4V @ 1mA 38 nC @ 10 V ±30V 1800 pF @ 25 V - 45W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
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