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    Home > Products  > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
    XP202A0003MR-G

    XP202A0003MR-G

    MOSFET P-CH 30V 3A SOT23

    Torex Semiconductor Ltd

    		 3,278
    RFQ
    		XP202A0003MR-G

    Datasheet

         		- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 30 V 5A (Tj) 4V, 10V 45mOhm @ 1.5A, 10V 2.6V @ 1mA 10 nC @ 10 V ±20V 435 pF @ 10 V - 1W 150°C - - Surface Mount SOT-23
    TK8A25DA,S4X

    TK8A25DA,S4X

    PB-F POWER MOSFET TRANSISTOR TO-

    Toshiba Semiconductor and Storage

    		 3,598
    RFQ
    		TK8A25DA,S4X

    Datasheet

         		- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 250 V 7.5A (Ta) 10V 500mOhm @ 3.8A, 10V 3.5V @ 1mA 16 nC @ 10 V ±20V 550 pF @ 100 V - 30W (Tc) 150°C - - Through Hole TO-220SIS
    FK4B01100LE

    FK4B01100LE

    SINGLE NCH MOSFET 12V, 3.4A, 27M

    Nuvoton Technology Corporation

    		 2,000
    RFQ
    		FK4B01100LE

    Datasheet

         		- 4-XFLGA, CSP Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 12 V 3.4A (Ta) 1.5V, 4.5V 30mOhm @ 1.5A, 4.5V 1V @ 236µA 5.8 nC @ 4.5 V ±8V 275 pF @ 10 V - 360mW (Ta) -40°C ~ 85°C (TA) Automotive AEC-Q101 Surface Mount 4-CSP (0.8x0.8)
    TK46A08N1,S4X

    TK46A08N1,S4X

    MOSFET N-CH 80V 46A TO220SIS

    Toshiba Semiconductor and Storage

    		 8,050
    RFQ
    		TK46A08N1,S4X

    Datasheet

         		U-MOSVIII-H TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 80 V 46A (Tc) 10V 8.4mOhm @ 23A, 10V 4V @ 500µA 37 nC @ 10 V ±20V 2500 pF @ 40 V - 35W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
    TK5A45DA(STA4,Q,M)

    TK5A45DA(STA4,Q,M)

    MOSFET N-CH 450V 4.5A TO220SIS

    Toshiba Semiconductor and Storage

    		 2,718
    RFQ
    		TK5A45DA(STA4,Q,M)

    Datasheet

         		π-MOSVII TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 450 V 4.5A (Ta) 10V 1.75Ohm @ 2.3A, 10V 4.4V @ 1mA 9 nC @ 10 V ±30V 380 pF @ 25 V - 30W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
    TK5A80E,S4X

    TK5A80E,S4X

    PB-F POWER MOSFET TRANSISTOR TO-

    Toshiba Semiconductor and Storage

    		 8,866
    RFQ
    		TK5A80E,S4X

    Datasheet

         		- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 800 V 5A (Ta) 10V 2.4Ohm @ 2.5A, 10V 4V @ 500µA 20 nC @ 10 V ±30V 950 pF @ 25 V - 40W (Tc) 150°C - - Through Hole TO-220SIS
    TK2A65D(STA4,Q,M)

    TK2A65D(STA4,Q,M)

    MOSFET N-CH 650V 2A TO220SIS

    Toshiba Semiconductor and Storage

    		 4,442
    RFQ
    		TK2A65D(STA4,Q,M)

    Datasheet

         		π-MOSVII TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 650 V 2A (Ta) 10V 3.26Ohm @ 1A, 10V 4.4V @ 1mA 9 nC @ 10 V ±30V 380 pF @ 25 V - 30W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
    TK35E08N1,S1X

    TK35E08N1,S1X

    MOSFET N-CH 80V 55A TO220

    Toshiba Semiconductor and Storage

    		 5,216
    RFQ
    		TK35E08N1,S1X

    Datasheet

         		U-MOSVIII-H TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 80 V 55A (Tc) 10V 12.2mOhm @ 17.5A, 10V 4V @ 300µA 25 nC @ 10 V ±20V 1700 pF @ 40 V - 72W (Tc) 150°C (TJ) - - Through Hole TO-220
    TK3A60DA(STA4,Q,M)

    TK3A60DA(STA4,Q,M)

    MOSFET N-CH 600V 2.5A TO220SIS

    Toshiba Semiconductor and Storage

    		 2,144
    RFQ
    		TK3A60DA(STA4,Q,M)

    Datasheet

         		π-MOSVII TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 2.5A (Ta) 10V 2.8Ohm @ 1.3A, 10V 4.4V @ 1mA 9 nC @ 10 V ±30V 380 pF @ 25 V - 30W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
    TK4A80E,S4X

    TK4A80E,S4X

    PB-FPOWERMOSFETTRANSISTORTO-220S

    Toshiba Semiconductor and Storage

    		 5,858
    RFQ
    		TK4A80E,S4X

    Datasheet

         		- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 800 V 4A (Ta) 10V 3.5Ohm @ 2A, 10V 4V @ 400µA 15 nC @ 10 V ±30V 650 pF @ 25 V - 35W (Tc) 150°C - - Through Hole TO-220SIS
    TK46E08N1,S1X

    TK46E08N1,S1X

    MOSFET N-CH 80V 80A TO220

    Toshiba Semiconductor and Storage

    		 5,262
    RFQ
    		TK46E08N1,S1X

    Datasheet

         		U-MOSVIII-H TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 80 V 80A (Tc) 10V 8.4mOhm @ 23A, 10V 4V @ 500µA 37 nC @ 10 V ±20V 2500 pF @ 40 V - 103W (Tc) 150°C (TJ) - - Through Hole TO-220
    TK5A50D(STA4,Q,M)

    TK5A50D(STA4,Q,M)

    MOSFET N-CH 500V 5A TO220SIS

    Toshiba Semiconductor and Storage

    		 6,910
    RFQ
    		TK5A50D(STA4,Q,M)

    Datasheet

         		π-MOSVII TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 500 V 5A (Ta) 10V 1.5Ohm @ 2.5A, 10V 4.4V @ 1mA 11 nC @ 10 V ±30V 490 pF @ 25 V - 35W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
    TK5Q65W,S1Q

    TK5Q65W,S1Q

    MOSFET N-CH 650V 5.2A IPAK

    Toshiba Semiconductor and Storage

    		 8,148
    RFQ

    -

    		 DTMOSIV TO-251-3 Stub Leads, IPAK Tube Active N-Channel MOSFET (Metal Oxide) 650 V 5.2A (Ta) 10V 1.22Ohm @ 2.6A, 10V 3.5V @ 170µA 10.5 nC @ 10 V ±30V 380 pF @ 300 V - 60W (Tc) 150°C (TJ) - - Through Hole IPAK
    TK9A45D(STA4,Q,M)

    TK9A45D(STA4,Q,M)

    MOSFET N-CH 450V 9A TO220SIS

    Toshiba Semiconductor and Storage

    		 6,072
    RFQ
    		TK9A45D(STA4,Q,M)

    Datasheet

         		π-MOSVII TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 450 V 9A (Ta) 10V 770mOhm @ 4.5A, 10V 4V @ 1mA 16 nC @ 10 V ±30V 800 pF @ 25 V - 40W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
    PSMN2R6-80YSFX

    PSMN2R6-80YSFX

    PSMN2R6-80YSF/SOT1023/4 LEADS

    Nexperia USA Inc.

    		 2,654
    RFQ
    		PSMN2R6-80YSFX

    Datasheet

         		- SOT-1023, 4-LFPAK Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 231A (Ta) 10V 2.4mOhm @ 25A, 10V 4V @ 1mA 127 nC @ 10 V ±20V 8191 pF @ 40 V - 294W (Ta) -55°C ~ 175°C (TJ) - - Surface Mount LFPAK56, Power-SO8
    TK5A53D(STA4,Q,M)

    TK5A53D(STA4,Q,M)

    MOSFET N-CH 525V 5A TO220SIS

    Toshiba Semiconductor and Storage

    		 4,208
    RFQ
    		TK5A53D(STA4,Q,M)

    Datasheet

         		π-MOSVII TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 525 V 5A (Ta) 10V 1.5Ohm @ 2.5A, 10V 4.4V @ 1mA 11 nC @ 10 V ±30V 540 pF @ 25 V - 35W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
    TK6A50D(STA4,Q,M)

    TK6A50D(STA4,Q,M)

    MOSFET N-CH 500V 6A TO220SIS

    Toshiba Semiconductor and Storage

    		 5,050
    RFQ
    		TK6A50D(STA4,Q,M)

    Datasheet

         		π-MOSVII TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 500 V 6A (Ta) 10V 1.4Ohm @ 3A, 10V 4.4V @ 1mA 11 nC @ 10 V ±30V 540 pF @ 25 V - 35W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
    ISP16DP10LMAXTSA1

    ISP16DP10LMAXTSA1

    ISP16DP10LMAXTSA1

    Infineon Technologies

    		 2,000
    RFQ
    		ISP16DP10LMAXTSA1

    Datasheet

         		OptiMOS™ TO-261-4, TO-261AA Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 100 V 2.3A (Ta), 3.9A (Tc) 4.5V, 10V 167mOhm @ 2.2A, 10V 2V @ 1.037mA 55 nC @ 10 V ±20V 2100 pF @ 50 V - 1.8W (Ta), 5W (Tc) -55°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount PG-SOT223-4-21
    TK6Q65W,S1Q

    TK6Q65W,S1Q

    MOSFET N-CH 650V 5.8A IPAK

    Toshiba Semiconductor and Storage

    		 3,292
    RFQ
    		TK6Q65W,S1Q

    Datasheet

         		DTMOSIV TO-251-3 Stub Leads, IPAK Tube Active N-Channel MOSFET (Metal Oxide) 650 V 5.8A (Ta) 10V 1.05Ohm @ 2.9A, 10V 3.5V @ 180µA 11 nC @ 10 V ±30V 390 pF @ 300 V - 60W (Tc) 150°C (TJ) - - Through Hole IPAK
    TK3R1E04PL,S1X

    TK3R1E04PL,S1X

    MOSFET N-CH 40V 100A TO220

    Toshiba Semiconductor and Storage

    		 4,580
    RFQ
    		TK3R1E04PL,S1X

    Datasheet

         		U-MOSIX-H TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 4.5V, 10V 3.8mOhm @ 30A, 4.5V 2.4V @ 500µA 63.4 nC @ 10 V ±20V 4670 pF @ 20 V - 87W (Tc) 175°C (TJ) - - Through Hole TO-220
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