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    Home > Products  > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
    S2M0025120J

    S2M0025120J

    MOSFET SILICON CARBIDE SIC 1200V

    SMC Diode Solutions

    		 7,584
    RFQ
    		S2M0025120J

    Datasheet

         		- TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 70A (Tj) 20V 34mOhm @ 50A, 20V 4V @ 15mA 177 nC @ 20 V +25V, -10V 4150 pF @ 1000 V - 311W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263-7
    SCT025H120G3AG

    SCT025H120G3AG

    AUTOMOTIVE-GRADE SILICON CARBIDE

    STMicroelectronics

    		 9,864
    RFQ
    		SCT025H120G3AG

    Datasheet

         		* - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
    SCT018H65G3AG

    SCT018H65G3AG

    H2PAK-7

    STMicroelectronics

    		 200
    RFQ
    		SCT018H65G3AG

    Datasheet

         		- TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 650 V 55A (Tc) 15V, 18V 27mOhm @ 30A, 18V 4.2V @ 5mA 79.4 nC @ 18 V +22V, -10V 2124 pF @ 400 V - 385W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount H2PAK-7
    S2M0080120N

    S2M0080120N

    MOSFET SILICON CARBIDE SIC 1200V

    SMC Diode Solutions

    		 8,458
    RFQ
    		S2M0080120N

    Datasheet

         		- SOT-227-4, miniBLOC Bulk Active N-Channel SiCFET (Silicon Carbide) 1200 V 36A (Tc) 20V 100mOhm @ 20A, 20V 4V @ 10mA 54 nC @ 20 V +20V, -5V 1324 pF @ 1000 V - 176W (Tc) -55°C ~ 175°C (TJ) - - Chassis Mount SOT-227
    SCT018W65G3-4AG

    SCT018W65G3-4AG

    TO247-4

    STMicroelectronics

    		 200
    RFQ
    		SCT018W65G3-4AG

    Datasheet

         		- TO-247-4 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 55A (Tc) 15V, 18V 27mOhm @ 30A, 18V 4.2V @ 5mA 77 nC @ 18 V +22V, -10V 2077 pF @ 400 V - 398W (Tc) -55°C ~ 200°C (TJ) Automotive AEC-Q101 Through Hole TO-247-4
    SCT025W120G3AG

    SCT025W120G3AG

    AUTOMOTIVE-GRADE SILICON CARBIDE

    STMicroelectronics

    		 200
    RFQ
    		SCT025W120G3AG

    Datasheet

         		* - Tube Active - - - - - - - - - - - - - - - - -
    SCT025W120G3-4AG

    SCT025W120G3-4AG

    TO247-4

    STMicroelectronics

    		 4,862
    RFQ
    		SCT025W120G3-4AG

    Datasheet

         		- TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 56A (Tc) 15V, 18V 37mOhm @ 25A, 18V 4.2V @ 5mA 73 nC @ 18 V +18V, -5V 1990 pF @ 800 V - 388W (Tc) -55°C ~ 200°C (TJ) Automotive AEC-Q101 Through Hole TO-247-4
    MSC015SMA070B4N

    MSC015SMA070B4N

    MOSFET SIC 700 V 15 MOHM TO-247-

    Microchip Technology

    		 2,250
    RFQ

    -

    		 - TO-247-4 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 700 V 112A (Tc) 18V, 20V 19mOhm @ 40A, 20V 5V @ 4mA 215 nC @ 20 V +23V, -10V 4324 pF @ 700 V - 524W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247-4
    SCT012W90G3-4AG

    SCT012W90G3-4AG

    AUTOMOTIVE-GRADE SILICON CARBIDE

    STMicroelectronics

    		 200
    RFQ

    -

    		 * - Tube Active - - - - - - - - - - - - - - - - -
    S2M0040120N-1

    S2M0040120N-1

    MOSFET SILICON CARBIDE SIC 1200V

    SMC Diode Solutions

    		 5,090
    RFQ
    		S2M0040120N-1

    Datasheet

         		- SOT-227-4, miniBLOC Bulk Active N-Channel SiCFET (Silicon Carbide) 1200 V 55A (Tc) 20V 52mOhm @ 40A, 20V 4V @ 10mA 92.1 nC @ 20 V +20V, -5V 1904 pF @ 1000 V - 348W (Tc) -55°C ~ 175°C (TJ) - - Chassis Mount SOT-227
    SCT011HU75G3AG

    SCT011HU75G3AG

    AUTOMOTIVE-GRADE SILICON CARBIDE

    STMicroelectronics

    		 5,620
    RFQ
    		SCT011HU75G3AG

    Datasheet

         		* - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
    MSC017SMA120B4N

    MSC017SMA120B4N

    MOSFET SIC 1200 V 17 MOHM TO-247

    Microchip Technology

    		 3,802
    RFQ

    -

    		 - TO-247-4 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 119A (Tc) 18V, 20V 22mOhm @ 40A, 20V 5V @ 4.5mA 194 nC @ 20 V +23V, -10V 4274 pF @ 1200 V - 577W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247-4
    MSC025SMA120B4N

    MSC025SMA120B4N

    MOSFET SIC 1200 V 25 MOHM TO-247

    Microchip Technology

    		 8,224
    RFQ

    -

    		 - TO-247-4 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 113A (Tc) 18V, 20V 31mOhm @ 40A, 20V 5V @ 3mA 232 nC @ 20 V +23V, -10V 3633 pF @ 1000 V - 577W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247-4
    S3M0040120N

    S3M0040120N

    MOSFET SILICON CARBIDE SIC 1200V

    SMC Diode Solutions

    		 6,080
    RFQ
    		S3M0040120N

    Datasheet

         		- SOT-227-4, miniBLOC Bulk Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 65A (Tc) 18V 52mOhm @ 40A, 18V 4V @ 16mA 143 nC @ 18 V +20V, -8V 2844 pF @ 1000 V - 483W (Tc) -55°C ~ 175°C (TJ) - - Chassis Mount SOT-227
    IXTH1N300P3HV

    IXTH1N300P3HV

    MOSFET N-CH 3000V 1A TO247HV

    Littelfuse Inc.

    		 4,078
    RFQ
    		IXTH1N300P3HV

    Datasheet

         		Polar P3™ TO-247-3 Variant Tube Active N-Channel MOSFET (Metal Oxide) 3000 V 1A (Tc) 10V 50Ohm @ 500mA, 10V 4V @ 250µA 30.6 nC @ 10 V ±20V 895 pF @ 25 V - 195W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247HV
    AIMZHN120R020M1TXKSA1

    AIMZHN120R020M1TXKSA1

    SIC_DISCRETE

    Infineon Technologies

    		 3,716
    RFQ
    		AIMZHN120R020M1TXKSA1

    Datasheet

         		- TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 100A (Tc) 18V, 20V 25mOhm @ 43A, 20V 5.1V @ 13.7mA 82 nC @ 20 V +23V, -5V 2667 pF @ 800 V - 429W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole PG-TO247-4-14
    DMWSH120H28SM4Q

    DMWSH120H28SM4Q

    SIC MOSFET BVDSS: >1000V TO247-4

    Diodes Incorporated

    		 4,526
    RFQ
    		DMWSH120H28SM4Q

    Datasheet

         		- TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 100A (Tc) 15V 28.5mOhm @ 50A, 15V 3.6V @ 17.7mA 156.3 nC @ 15 V +19V, -8V - - 429W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247-4
    S2M0025120N

    S2M0025120N

    MOSFET SILICON CARBIDE SIC 1200V

    SMC Diode Solutions

    		 8,210
    RFQ
    		S2M0025120N

    Datasheet

         		- SOT-227-4, miniBLOC Bulk Active N-Channel SiCFET (Silicon Carbide) 1200 V 104A (Tc) 20V 34mOhm @ 50A, 20V 4V @ 15mA 165 nC @ 20 V +20V, -5V 4054 pF @ 1000 V - 535W (Tc) -55°C ~ 175°C (TJ) - - Chassis Mount SOT-227
    TM3B0020120A

    TM3B0020120A

    1200V 20MOHM SIC MOSFET TO247-4

    Coherent Corp

    		 6,072
    RFQ
    		TM3B0020120A

    Datasheet

         		- - Tube Active - - - - - - - - - - - - - - - - -
    S3M0016120N

    S3M0016120N

    MOSFET SILICON CARBIDE SIC 1200V

    SMC Diode Solutions

    		 5,130
    RFQ
    		S3M0016120N

    Datasheet

         		- SOT-227-4, miniBLOC Bulk Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 120A (Tc) 18V 23mOhm @ 75A, 18V 4V @ 30mA 287 nC @ 18 V +22V, -8V 5251 pF @ 1000 V - 732W (Tc) -55°C ~ 175°C (TJ) - - Chassis Mount SOT-227
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