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    Home > Products  > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
    NTHL190N65S3HF

    NTHL190N65S3HF

    MOSFET N-CH 650V 20A TO247-3

    onsemi

    		 7,232
    RFQ
    		NTHL190N65S3HF

    Datasheet

         		FRFET®, SuperFET® III TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 20A (Tc) 10V 190mOhm @ 10A, 10V 5V @ 430µA 34 nC @ 10 V ±30V 1610 pF @ 400 V - 162W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247-3
    IXFQ28N60P3

    IXFQ28N60P3

    MOSFET N-CH 600V 28A TO3P

    IXYS

    		 6,266
    RFQ
    		IXFQ28N60P3

    Datasheet

         		HiPerFET™, Polar3™ TO-3P-3, SC-65-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 28A (Tc) 10V 260mOhm @ 14A, 10V 5V @ 2.5mA 50 nC @ 10 V ±30V 3560 pF @ 25 V - 695W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-3P
    TK28N65W5,S1F

    TK28N65W5,S1F

    X35 PB-F POWER MOSFET TRANSISTOR

    Toshiba Semiconductor and Storage

    		 9,262
    RFQ
    		TK28N65W5,S1F

    Datasheet

         		- TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 27.6A (Ta) 10V 130mOhm @ 13.8A, 10V 4.5V @ 1.6mA 90 nC @ 10 V ±30V 3000 pF @ 300 V - 230W (Tc) 150°C - - Through Hole TO-247
    IXTP01N100D

    IXTP01N100D

    MOSFET N-CH 1000V 400MA TO220AB

    Littelfuse Inc.

    		 6,944
    RFQ
    		IXTP01N100D

    Datasheet

         		Depletion TO-220-3 Tube Active N-Channel, Depletion Mode MOSFET (Metal Oxide) 1000 V 400mA (Tc) 0V 80Ohm @ 50mA, 0V 4.5V @ 25µA 5.8 nC @ 5 V ±20V 100 pF @ 25 V - 1.1W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220-3
    IXTH180N10T

    IXTH180N10T

    MOSFET N-CH 100V 180A TO247

    Littelfuse Inc.

    		 2,922
    RFQ
    		IXTH180N10T

    Datasheet

         		Trench TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 100 V 180A (Tc) 10V 6.4mOhm @ 25A, 10V 4.5V @ 250µA 151 nC @ 10 V ±30V 6900 pF @ 25 V - 480W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247 (IXTH)
    IXTP80N075L2

    IXTP80N075L2

    MOSFET N-CH 75V 80A TO220AB

    Littelfuse Inc.

    		 6,458
    RFQ
    		IXTP80N075L2

    Datasheet

         		Linear L2™ TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 75 V 80A (Tc) 10V 24mOhm @ 40A, 10V 4.5V @ 250µA 103 nC @ 10 V ±20V 3600 pF @ 25 V - 357W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220-3
    IXTH120P065T

    IXTH120P065T

    MOSFET P-CH 65V 120A TO247

    Littelfuse Inc.

    		 4,586
    RFQ
    		IXTH120P065T

    Datasheet

         		TrenchP™ TO-247-3 Tube Active P-Channel MOSFET (Metal Oxide) 65 V 120A (Tc) 10V 10mOhm @ 500mA, 10V 4V @ 250µA 185 nC @ 10 V ±15V 13200 pF @ 25 V - 298W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247 (IXTH)
    TK31N60W5,S1VF

    TK31N60W5,S1VF

    MOSFET N-CH 600V 30.8A TO247

    Toshiba Semiconductor and Storage

    		 6,492
    RFQ
    		TK31N60W5,S1VF

    Datasheet

         		DTMOSIV TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 30.8A (Ta) 10V 99mOhm @ 15.4A, 10V 4.5V @ 1.5mA 105 nC @ 10 V ±30V 3000 pF @ 300 V - 230W (Tc) 150°C (TJ) - - Through Hole TO-247
    IXFA34N65X3

    IXFA34N65X3

    MOSFET 34A 650V X3 TO263

    Littelfuse Inc.

    		 4,588
    RFQ
    		IXFA34N65X3

    Datasheet

         		HiPerFET™, Ultra X3 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active N-Channel MOSFET (Metal Oxide) 650 V 34A (Tc) 10V 100mOhm @ 17A, 10V 5.2V @ 2.5mA 29 nC @ 10 V ±20V 2025 pF @ 25 V - 446W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263AA (IXFA)
    IXTP6N100D2

    IXTP6N100D2

    MOSFET N-CH 1000V 6A TO220AB

    Littelfuse Inc.

    		 6,162
    RFQ
    		IXTP6N100D2

    Datasheet

         		Depletion TO-220-3 Tube Active N-Channel, Depletion Mode MOSFET (Metal Oxide) 1000 V 6A (Tc) - 2.2Ohm @ 3A, 0V - 95 nC @ 5 V ±20V 2650 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220-3
    MSC080SMA120B4

    MSC080SMA120B4

    SICFET N-CH 1200V 37A TO247-4

    Microchip Technology

    		 3,008
    RFQ
    		MSC080SMA120B4

    Datasheet

         		- TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 37A (Tc) 20V 100mOhm @ 15A, 20V 2.8V @ 1mA 64 nC @ 20 V +23V, -10V 838 pF @ 1000 V - 200W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247-4
    IXTP86N20X4

    IXTP86N20X4

    MOSFET 200V 86A N-CH ULTRA TO220

    Littelfuse Inc.

    		 4,056
    RFQ
    		IXTP86N20X4

    Datasheet

         		Ultra X4 TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 200 V 86A (Tc) 10V 13mOhm @ 43A, 10V 4.5V @ 250µA 70 nC @ 10 V ±20V 2250 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220
    MSC060SMA070B

    MSC060SMA070B

    SICFET N-CH 700V 39A TO247-3

    Microchip Technology

    		 3,550
    RFQ
    		MSC060SMA070B

    Datasheet

         		- TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 700 V 39A (Tc) 20V 75mOhm @ 20A, 20V 2.4V @ 1mA 56 nC @ 20 V +23V, -10V 1175 pF @ 700 V - 143W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247-3
    IXFH48N60X3

    IXFH48N60X3

    MOSFET ULTRA JCT 600V 48A TO247

    Littelfuse Inc.

    		 9,898
    RFQ
    		IXFH48N60X3

    Datasheet

         		HiPerFET™, Ultra X3 TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 48A (Tc) 10V 65mOhm @ 24A, 10V 5V @ 2.5mA 38 nC @ 10 V ±20V 2730 pF @ 25 V - 520W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247
    TW107N65C,S1F

    TW107N65C,S1F

    G3 650V SIC-MOSFET TO-247 107MO

    Toshiba Semiconductor and Storage

    		 3,796
    RFQ
    		TW107N65C,S1F

    Datasheet

         		- TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 650 V 20A (Tc) 18V 145mOhm @ 10A, 18V 5V @ 1.2mA 21 nC @ 18 V +25V, -10V 600 pF @ 400 V - 76W (Tc) 175°C - - Through Hole TO-247
    TK39A60W,S4VX

    TK39A60W,S4VX

    MOSFET N-CH 600V 38.8A TO220SIS

    Toshiba Semiconductor and Storage

    		 8,604
    RFQ
    		TK39A60W,S4VX

    Datasheet

         		DTMOSIV TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 38.8A (Ta) 10V 65mOhm @ 19.4A, 10V 3.7V @ 1.9mA 110 nC @ 10 V ±30V 4100 pF @ 300 V - 50W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
    NTH4L060N090SC1

    NTH4L060N090SC1

    SILICON CARBIDE MOSFET, NCHANNEL

    onsemi

    		 8,356
    RFQ
    		NTH4L060N090SC1

    Datasheet

         		- TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 900 V 46A (Tc) 15V, 18V 43mOhm @ 20A, 18V 4.3V @ 5mA 87 nC @ 15 V +22V, -8V 1770 pF @ 450 V - 221W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247-4L
    MSC060SMA070S

    MSC060SMA070S

    SICFET N-CH 700V 37A D3PAK

    Microchip Technology

    		 4,894
    RFQ
    		MSC060SMA070S

    Datasheet

         		- TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tube Active N-Channel SiCFET (Silicon Carbide) 700 V 37A (Tc) 20V 75mOhm @ 20A, 20V 2.4V @ 1mA (Typ) 56 nC @ 20 V +23V, -10V 1175 pF @ 700 V - 130W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D3PAK
    APT1204R7BFLLG

    APT1204R7BFLLG

    MOSFET N-CH 1200V 3.5A TO247

    Microchip Technology

    		 3,620
    RFQ
    		APT1204R7BFLLG

    Datasheet

         		POWER MOS 7® TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 1200 V 3.5A (Tc) 10V 4.7Ohm @ 1.75A, 10V 5V @ 1mA 31 nC @ 10 V ±30V 715 pF @ 25 V - 135W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247 [B]
    IXFH86N30T

    IXFH86N30T

    MOSFET N-CH 300V 86A TO247AD

    Littelfuse Inc.

    		 9,826
    RFQ
    		IXFH86N30T

    Datasheet

         		HiPerFET™, Trench TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 300 V 86A (Tc) 10V 43mOhm @ 43A, 10V 5V @ 4mA 180 nC @ 10 V ±20V 11300 pF @ 25 V - 860W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247AD (IXFH)
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