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    Home > Products  > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
    APT50M65JLL

    APT50M65JLL

    MOSFET N-CH 500V 58A ISOTOP

    Microchip Technology

    		 6,518
    RFQ
    		APT50M65JLL

    Datasheet

         		POWER MOS 7® SOT-227-4, miniBLOC Tube Active N-Channel MOSFET (Metal Oxide) 500 V 58A (Tc) 10V 65mOhm @ 29A, 10V 5V @ 2.5mA 141 nC @ 10 V ±30V 7010 pF @ 25 V - 520W (Tc) -55°C ~ 150°C (TJ) - - Chassis Mount ISOTOP®
    MSC40SM120JCU3

    MSC40SM120JCU3

    SICFET N-CH 1.2KV 55A SOT227

    Microchip Technology

    		 7,252
    RFQ
    		MSC40SM120JCU3

    Datasheet

         		- SOT-227-4, miniBLOC Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 55A (Tc) 20V 50mOhm @ 40A, 20V 2.7V @ 1mA 137 nC @ 20 V +25V, -10V 1990 pF @ 1000 V - 245W (Tc) -55°C ~ 150°C (TJ) - - Chassis Mount SOT-227 (ISOTOP®)
    MSC017SMA120J

    MSC017SMA120J

    MOSFET SIC 1200V 17 MOHM SOT-227

    Microchip Technology

    		 9,106
    RFQ
    		MSC017SMA120J

    Datasheet

         		- - Bulk Active N-Channel SiCFET (Silicon Carbide) 1200 V 88A (Tc) 20V 22mOhm @ 40A, 20V 2.7V @ 4.5mA (Typ) 249 nC @ 20 V +23V, -10V 5280 pF @ 1000 V - 278W (Tc) -55°C ~ 175°C (TJ) - - - SOT-227
    TW015N65C,S1F

    TW015N65C,S1F

    G3 650V SIC-MOSFET TO-247 15MOH

    Toshiba Semiconductor and Storage

    		 4,634
    RFQ
    		TW015N65C,S1F

    Datasheet

         		- TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 650 V 100A (Tc) 18V 21mOhm @ 50A, 18V 5V @ 11.7mA 128 nC @ 18 V +25V, -10V 4850 pF @ 400 V - 342W (Tc) 175°C - - Through Hole TO-247
    MSC100SM70JCU3

    MSC100SM70JCU3

    SICFET N-CH 700V 124A SOT227

    Microchip Technology

    		 6,480
    RFQ
    		MSC100SM70JCU3

    Datasheet

         		- SOT-227-4, miniBLOC Tube Active N-Channel SiCFET (Silicon Carbide) 700 V 124A (Tc) 20V 19mOhm @ 40A, 20V 2.4V @ 4mA 215 nC @ 20 V +25V, -10V 4500 pF @ 700 V - 365W (Tc) -55°C ~ 150°C (TJ) - - Chassis Mount SOT-227 (ISOTOP®)
    MSC70SM120JCU2

    MSC70SM120JCU2

    SICFET N-CH 1.2KV 89A SOT227

    Microchip Technology

    		 4,708
    RFQ
    		MSC70SM120JCU2

    Datasheet

         		- SOT-227-4, miniBLOC Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 89A (Tc) 20V 31mOhm @ 40A, 20V 2.8V @ 1mA 232 nC @ 20 V +25V, -10V 3020 pF @ 1000 V - 395W (Tc) -55°C ~ 150°C (TJ) - - Chassis Mount SOT-227 (ISOTOP®)
    APT50M50JVFR

    APT50M50JVFR

    MOSFET N-CH 500V 77A ISOTOP

    Microchip Technology

    		 7,664
    RFQ
    		APT50M50JVFR

    Datasheet

         		POWER MOS V® SOT-227-4, miniBLOC Tube Active N-Channel MOSFET (Metal Oxide) 500 V 77A (Tc) - 50mOhm @ 500mA, 10V 4V @ 5mA 1000 nC @ 10 V - 19600 pF @ 25 V - - - - - Chassis Mount ISOTOP®
    MSC130SM120JCU3

    MSC130SM120JCU3

    SICFET N-CH 1.2KV 173A SOT227

    Microchip Technology

    		 5,622
    RFQ
    		MSC130SM120JCU3

    Datasheet

         		- SOT-227-4, miniBLOC Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 173A (Tc) 20V 16mOhm @ 80A, 20V 2.8V @ 2mA 464 nC @ 20 V +25V, -10V 6040 pF @ 1000 V - 745W (Tc) -55°C ~ 150°C (TJ) - - Chassis Mount SOT-227 (ISOTOP®)
    IXFN70N120SK

    IXFN70N120SK

    SICFET N-CH 1200V 68A SOT227B

    IXYS

    		 5,554
    RFQ
    		IXFN70N120SK

    Datasheet

         		- SOT-227-4, miniBLOC Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 68A (Tc) 20V 34mOhm @ 50A, 20V 4V @ 15mA 161 nC @ 20 V +20V, -5V 2790 pF @ 1000 V - - -40°C ~ 175°C (TJ) - - Chassis Mount SOT-227B
    MSCSM120DAM31CTBL1NG

    MSCSM120DAM31CTBL1NG

    PM-MOSFET-SIC-SBD-BL1

    Microchip Technology

    		 4,856
    RFQ
    		MSCSM120DAM31CTBL1NG

    Datasheet

         		- Module Bulk Active N-Channel SiCFET (Silicon Carbide) 1200 V 79A 20V 31mOhm @ 40A, 20V 2.8V @ 1mA 232 nC @ 20 V +25V, -10V 3020 pF @ 1000 V - 310W -55°C ~ 175°C (TJ) - - Chassis Mount -
    EPC7014UBSH

    EPC7014UBSH

    GAN FET HEMT 60V 1A 4UB

    EPC Space, LLC

    		 3,680
    RFQ
    		EPC7014UBSH

    Datasheet

         		e-GaN® 4-SMD, No Lead Bulk Active N-Channel GaNFET (Gallium Nitride) 60 V 1A (Tc) 5V 580mOhm @ 1A, 5V 2.5V @ 140µA - - 22 pF @ 30 V - - -55°C ~ 150°C (TJ) - - Surface Mount 4-SMD
    FBG04N30BSH

    FBG04N30BSH

    GAN FET HEMT 40V 30A 4FSMD-B

    EPC Space, LLC

    		 6,820
    RFQ
    		FBG04N30BSH

    Datasheet

         		e-GaN® 4-SMD, No Lead Bulk Active N-Channel GaNFET (Gallium Nitride) 40 V 30A (Tc) 5V 9mOhm @ 30A, 5V 2.5V @ 9mA 11.4 nC @ 5 V +6V, -4V 1300 pF @ 20 V - - -55°C ~ 150°C (TJ) - - Surface Mount 4-SMD
    BSM180C12P3C202

    BSM180C12P3C202

    SICFET N-CH 1200V 180A MODULE

    Rohm Semiconductor

    		 4,518
    RFQ
    		BSM180C12P3C202

    Datasheet

         		- Module Bulk Active N-Channel SiCFET (Silicon Carbide) 1200 V 180A (Tc) - - 5.6V @ 50mA - +22V, -4V 9000 pF @ 10 V - 880W (Tc) -40°C ~ 150°C (TJ) - - Chassis Mount Module
    TSM2N7002AKCU RFG

    TSM2N7002AKCU RFG

    60V, 0.24A, SINGLE N-CHANNEL POW

    Taiwan Semiconductor Corporation

    		 260
    RFQ
    		TSM2N7002AKCU RFG

    Datasheet

         		- SC-70, SOT-323 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 240mA (Ta) 4.5V, 10V 2.5Ohm @ 240mA, 10V 2.5V @ 250µA 0.68 nC @ 4.5 V ±20V 30 pF @ 30 V - 298mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-323
    ISP20EP10LMXTSA1

    ISP20EP10LMXTSA1

    SMALL SIGNAL MOSFETS PG-SOT223-4

    Infineon Technologies

    		 2,000
    RFQ
    		ISP20EP10LMXTSA1

    Datasheet

         		OptiMOS™ TO-261-4, TO-261AA Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 100 V 650mA (Ta), 990mA (Tc) 4.5V, 10V 2Ohm @ 600mA, 10V 2V @ 78µA 3.5 nC @ 10 V ±20V 170 pF @ 50 V - 1.8W (Ta), 4.2W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-SOT223-4
    NVJS4405NT1G

    NVJS4405NT1G

    MOSFET N-CH 25V 1A SC88

    onsemi

    		 1,374
    RFQ
    		NVJS4405NT1G

    Datasheet

         		- 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 25 V 1A (Ta) 2.7V, 4.5V 350mOhm @ 600mA, 4.5V 1.5V @ 250µA 1.5 nC @ 4.5 V ±8V 60 pF @ 10 V - 630mW (Ta) -55°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount SC-88/SC70-6/SOT-363
    DMP2067LVT-7

    DMP2067LVT-7

    MOSFET P-CH 20V 4.2A TSOT26

    Diodes Incorporated

    		 840
    RFQ
    		DMP2067LVT-7

    Datasheet

         		- SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 20 V 4.2A (Ta) 2.5V, 4.5V 45mOhm @ 4.5A, 4.5V 1.5V @ 250µA 28 nC @ 8 V ±8V 1575 pF @ 10 V - 1.2W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount TSOT-26
    SSM6K404TU,LF

    SSM6K404TU,LF

    MOSFET N-CH 20V 3A UF6

    Toshiba Semiconductor and Storage

    		 5,610
    RFQ
    		SSM6K404TU,LF

    Datasheet

         		- 6-SMD, Flat Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 20 V 3A (Ta) 1.5V, 4V 55mOhm @ 2A, 4V 1V @ 1mA 5.9 nC @ 4 V ±10V 400 pF @ 10 V - 500mW (Ta) 150°C - - Surface Mount UF6
    SI1480DH-T1-GE3

    SI1480DH-T1-GE3

    MOSFET N-CH 100V 2.6A SC70-6

    Vishay Siliconix

    		 1,910
    RFQ
    		SI1480DH-T1-GE3

    Datasheet

         		TrenchFET® 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 2.6A (Tc) 4.5V, 10V 200mOhm @ 1.9A, 10V 3V @ 250µA 5 nC @ 10 V ±20V 130 pF @ 50 V - 1.5W (Ta), 2.8W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount SC-70-6
    MCH6353-TL-W

    MCH6353-TL-W

    MOSFET P-CH 12V 6A 6MCPH

    onsemi

    		 1,272
    RFQ
    		MCH6353-TL-W

    Datasheet

         		- 6-SMD, Flat Leads Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 12 V 6A (Ta) 1.5V, 4.5V 35mOhm @ 3A, 4.5V - 12 nC @ 4.5 V ±10V 1250 pF @ 6 V - 1.4W (Ta) 150°C (TJ) - - Surface Mount 6-MCPH
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