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    Home > Products  > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
    APT29F100B2

    APT29F100B2

    MOSFET N-CH 1000V 30A T-MAX

    Microchip Technology

    		 4,794
    RFQ
    		APT29F100B2

    Datasheet

         		POWER MOS 8™ TO-247-3 Variant Tube Active N-Channel MOSFET (Metal Oxide) 1000 V 30A (Tc) 10V 440mOhm @ 16A, 10V 5V @ 2.5mA 260 nC @ 10 V ±30V 8500 pF @ 25 V - 1040W (Tc) -55°C ~ 150°C (TJ) - - Through Hole T-MAX™ [B2]
    TW060N120C,S1F

    TW060N120C,S1F

    G3 1200V SIC-MOSFET TO-247 60MO

    Toshiba Semiconductor and Storage

    		 2,676
    RFQ
    		TW060N120C,S1F

    Datasheet

         		- TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 36A (Tc) 18V 78mOhm @ 18A, 18V 5V @ 4.2mA 46 nC @ 18 V +25V, -10V 1530 pF @ 800 V - 170W (Tc) 175°C - - Through Hole TO-247
    GP2T040A120H

    GP2T040A120H

    SIC MOSFET 1200V 40M TO-247-4L

    SemiQ

    		 4,878
    RFQ
    		GP2T040A120H

    Datasheet

         		- TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 63A (Tc) 20V 52mOhm @ 40A, 20V 4V @ 10mA 118 nC @ 20 V +25V, -10V 3192 pF @ 1000 V - 322W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247-4
    APT106N60LC6

    APT106N60LC6

    MOSFET N-CH 600V 106A TO264

    Microchip Technology

    		 6,406
    RFQ
    		APT106N60LC6

    Datasheet

         		CoolMOS™ TO-264-3, TO-264AA Tube Active N-Channel MOSFET (Metal Oxide) 600 V 106A (Tc) 10V 35mOhm @ 53A, 10V 3.5V @ 3.4mA 308 nC @ 10 V ±20V 8390 pF @ 25 V - 833W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-264 (L)
    APT48M80L

    APT48M80L

    MOSFET N-CH 800V 49A TO264

    Microchip Technology

    		 6,694
    RFQ
    		APT48M80L

    Datasheet

         		- TO-264-3, TO-264AA Tube Active N-Channel MOSFET (Metal Oxide) 800 V 49A (Tc) 10V 200mOhm @ 24A, 10V 5V @ 2.5mA 305 nC @ 10 V ±30V 9330 pF @ 25 V - 1135W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-264 [L]
    APT10078BLLG

    APT10078BLLG

    MOSFET N-CH 1000V 14A TO247

    Microchip Technology

    		 6,742
    RFQ
    		APT10078BLLG

    Datasheet

         		POWER MOS 7® TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 1000 V 14A (Tc) 10V 780mOhm @ 7A, 10V 5V @ 1mA 95 nC @ 10 V ±30V 2525 pF @ 25 V - 403W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247 [B]
    TW027N65C,S1F

    TW027N65C,S1F

    G3 650V SIC-MOSFET TO-247 27MOH

    Toshiba Semiconductor and Storage

    		 6,578
    RFQ
    		TW027N65C,S1F

    Datasheet

         		- TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 650 V 58A (Tc) 18V 37mOhm @ 29A, 18V 5V @ 3mA 65 nC @ 18 V +25V, -10V 2288 pF @ 400 V - 156W (Tc) 175°C - - Through Hole TO-247
    APT28M120B2

    APT28M120B2

    MOSFET N-CH 1200V 29A T-MAX

    Microchip Technology

    		 3,030
    RFQ
    		APT28M120B2

    Datasheet

         		POWER MOS 8™ TO-247-3 Variant Tube Active N-Channel MOSFET (Metal Oxide) 1200 V 29A (Tc) 10V 560mOhm @ 14A, 10V 5V @ 2.5mA 300 nC @ 10 V ±30V 9670 pF @ 25 V - 1135W (Tc) -55°C ~ 150°C (TJ) - - Through Hole T-MAX™ [B2]
    APT10050LVRG

    APT10050LVRG

    MOSFET N-CH 1000V 21A TO264

    Microchip Technology

    		 3,568
    RFQ
    		APT10050LVRG

    Datasheet

         		POWER MOS V® TO-264-3, TO-264AA Tube Active N-Channel MOSFET (Metal Oxide) 1000 V 21A (Tc) - 500mOhm @ 500mA, 10V 4V @ 2.5mA 500 nC @ 10 V - 7900 pF @ 25 V - - - - - Through Hole TO-264 [L]
    MSC040SMA120B

    MSC040SMA120B

    SICFET N-CH 1200V 66A TO247-3

    Microchip Technology

    		 3,302
    RFQ
    		MSC040SMA120B

    Datasheet

         		- TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 66A (Tc) 20V 50mOhm @ 40A, 20V 2.7V @ 2mA 137 nC @ 20 V +23V, -10V 1990 pF @ 1000 V - 323W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247-3
    GCMX080B120S1-E1

    GCMX080B120S1-E1

    SIC 1200V 80M MOSFET SOT-227

    SemiQ

    		 2,670
    RFQ
    		GCMX080B120S1-E1

    Datasheet

         		- SOT-227-4, miniBLOC Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 30A (Tc) 20V 100mOhm @ 20A, 20V 4V @ 10mA 58 nC @ 20 V +25V, -10V 1336 pF @ 1000 V - 142W (Tc) -55°C ~ 175°C (TJ) - - Chassis Mount SOT-227
    MSC040SMA120S

    MSC040SMA120S

    SICFET N-CH 1200V 64A TO268

    Microchip Technology

    		 4,870
    RFQ
    		MSC040SMA120S

    Datasheet

         		- TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 64A (Tc) 20V 50mOhm @ 40A, 20V 2.6V @ 2mA 137 nC @ 20 V +23V, -10V 1990 pF @ 1000 V - 303W -55°C ~ 175°C (TJ) - - Surface Mount D3PAK
    GCMS080B120S1-E1

    GCMS080B120S1-E1

    SIC 1200V 80M MOSFET & 10A SBD S

    SemiQ

    		 6,696
    RFQ
    		GCMS080B120S1-E1

    Datasheet

         		- SOT-227-4, miniBLOC Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 30A (Tc) 20V 100mOhm @ 20A, 20V 4V @ 10mA 58 nC @ 20 V +25V, -10V 1374 pF @ 1000 V - 142W (Tc) -55°C ~ 175°C (TJ) - - Chassis Mount SOT-227
    TW030N120C,S1F

    TW030N120C,S1F

    G3 1200V SIC-MOSFET TO-247 30MO

    Toshiba Semiconductor and Storage

    		 7,968
    RFQ
    		TW030N120C,S1F

    Datasheet

         		- TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 60A (Tc) 18V 40mOhm @ 30A, 18V 5V @ 13mA 82 nC @ 18 V +25V, -10V 2925 pF @ 800 V - 249W (Tc) 175°C - - Through Hole TO-247
    IXTN40P50P

    IXTN40P50P

    MOSFET P-CH 500V 40A SOT227B

    Littelfuse Inc.

    		 8,640
    RFQ
    		IXTN40P50P

    Datasheet

         		PolarP™ SOT-227-4, miniBLOC Tube Active P-Channel MOSFET (Metal Oxide) 500 V 40A (Tc) 10V 230mOhm @ 500mA, 10V 4V @ 1mA 205 nC @ 10 V ±20V 11500 pF @ 25 V - 890W (Tc) -55°C ~ 150°C (TJ) - - Chassis Mount SOT-227B
    APT5010JVR

    APT5010JVR

    MOSFET N-CH 500V 44A ISOTOP

    Microchip Technology

    		 7,754
    RFQ
    		APT5010JVR

    Datasheet

         		POWER MOS V® SOT-227-4, miniBLOC Tube Active N-Channel MOSFET (Metal Oxide) 500 V 44A (Tc) - 100mOhm @ 500mA, 10V 4V @ 2.5mA 470 nC @ 10 V - 8900 pF @ 25 V - - - - - Chassis Mount ISOTOP®
    APT5010JVFR

    APT5010JVFR

    MOSFET N-CH 500V 44A ISOTOP

    Microchip Technology

    		 4,552
    RFQ
    		APT5010JVFR

    Datasheet

         		POWER MOS V® SOT-227-4, miniBLOC Tube Active N-Channel MOSFET (Metal Oxide) 500 V 44A (Tc) - 100mOhm @ 500mA, 10V 4V @ 2.5mA 470 nC @ 10 V - 8900 pF @ 25 V - - - - - Chassis Mount ISOTOP®
    MSC035SMA170S

    MSC035SMA170S

    MOSFET SIC 1700V 35 MOHM TO-268

    Microchip Technology

    		 8,452
    RFQ
    		MSC035SMA170S

    Datasheet

         		- TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Bulk Active N-Channel SiCFET (Silicon Carbide) 1700 V 59A (Tc) 20V 45mOhm @ 30A, 20V 3.25V @ 2.5mA (Typ) 178 nC @ 20 V +23V, -10V 3300 pF @ 1000 V - 278W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D3PAK
    IXFN170N30P

    IXFN170N30P

    MOSFET N-CH 300V 138A SOT-227B

    Littelfuse Inc.

    		 7,842
    RFQ
    		IXFN170N30P

    Datasheet

         		HiPerFET™, Polar SOT-227-4, miniBLOC Tube Active N-Channel MOSFET (Metal Oxide) 300 V 138A (Tc) 10V 18mOhm @ 85A, 10V 4.5V @ 1mA 258 nC @ 10 V ±20V 20000 pF @ 25 V - 890W (Tc) -55°C ~ 150°C (TJ) - - Chassis Mount SOT-227B
    MMIX1F420N10T

    MMIX1F420N10T

    MOSFET N-CH 100V 334A 24SMPD

    IXYS

    		 6,864
    RFQ
    		MMIX1F420N10T

    Datasheet

         		GigaMOS™, HiPerFET™, TrenchT2™ 24-PowerSMD, 21 Leads Tube Active N-Channel MOSFET (Metal Oxide) 100 V 334A (Tc) 10V 2.6mOhm @ 60A, 10V 5V @ 8mA 670 nC @ 10 V ±20V 4700 pF @ 10 V - 680W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount 24-SMPD
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