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    Home > Products  > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
    TK7A90E,S4X

    TK7A90E,S4X

    MOSFET N-CH 900V 7A TO220SIS

    Toshiba Semiconductor and Storage

    		 6,972
    RFQ
    		TK7A90E,S4X

    Datasheet

         		π-MOSVIII TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 900 V 7A (Ta) 10V 2Ohm @ 3.5A, 10V 4V @ 700µA 32 nC @ 10 V ±30V 1350 pF @ 25 V - 45W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
    DMTH4004SCTBQ-13

    DMTH4004SCTBQ-13

    MOSFET N-CH 40V 100A TO263AB

    Diodes Incorporated

    		 3,760
    RFQ
    		DMTH4004SCTBQ-13

    Datasheet

         		- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 10V 3mOhm @ 100A, 10V 4V @ 250µA 68.6 nC @ 10 V ±20V 4305 pF @ 25 V - 4.7W (Ta), 136W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount TO-263
    TK3R2E06PL,S1X

    TK3R2E06PL,S1X

    X35 PB-F POWER MOSFET TRANSISTOR

    Toshiba Semiconductor and Storage

    		 6,620
    RFQ
    		TK3R2E06PL,S1X

    Datasheet

         		- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 60 V 100A (Tc) 4.5V, 10V 3.2mOhm @ 50A, 10V 2.5V @ 700µA 71 nC @ 10 V ±20V 5000 pF @ 30 V - 168W (Tc) 175°C - - Through Hole TO-220
    CSD18503Q5AT

    CSD18503Q5AT

    MOSFET N-CH 40V 100A 8VSON

    Texas Instruments

    		 698
    RFQ
    		CSD18503Q5AT

    Datasheet

         		NexFET™ 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 4.5V, 10V 4.3mOhm @ 22A, 10V 2.3V @ 250µA 16 nC @ 4.5 V ±20V 2640 pF @ 20 V - 3.1W (Ta), 120W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-VSONP (5x6)
    NVMJS2D5N06CLTWG

    NVMJS2D5N06CLTWG

    MOSFET N-CH 60V 31A/164A 8LFPAK

    onsemi

    		 3,986
    RFQ
    		NVMJS2D5N06CLTWG

    Datasheet

         		- SOT-1205, 8-LFPAK56 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 31A (Ta), 164A (Tc) 4.5V, 10V 2.4mOhm @ 50A, 10V 2V @ 135µA 52 nC @ 10 V ±20V 3600 pF @ 25 V - 3.9W (Ta), 113W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 8-LFPAK
    TK40A10N1,S4X

    TK40A10N1,S4X

    MOSFET N-CH 100V 40A TO220SIS

    Toshiba Semiconductor and Storage

    		 3,380
    RFQ
    		TK40A10N1,S4X

    Datasheet

         		U-MOSVIII-H TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 100 V 40A (Tc) 10V 8.2mOhm @ 20A, 10V 4V @ 500µA 49 nC @ 10 V ±20V 3000 pF @ 50 V - 35W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
    TK33S10N1L,LQ

    TK33S10N1L,LQ

    MOSFET N-CH 100V 33A DPAK

    Toshiba Semiconductor and Storage

    		 9,564
    RFQ
    		TK33S10N1L,LQ

    Datasheet

         		U-MOSVIII-H TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 33A (Ta) 4.5V, 10V 9.7mOhm @ 16.5A, 10V 2.5V @ 500µA 33 nC @ 10 V ±20V 2250 pF @ 10 V - 125W (Tc) 175°C - - Surface Mount DPAK+
    IRF9Z34PBF-BE3

    IRF9Z34PBF-BE3

    MOSFET P-CH 60V 18A TO220AB

    Vishay Siliconix

    		 3,290
    RFQ
    		IRF9Z34PBF-BE3

    Datasheet

         		- TO-220-3 Tube Active P-Channel MOSFET (Metal Oxide) 60 V 18A (Tc) - 140mOhm @ 11A, 10V 4V @ 250µA 34 nC @ 10 V ±20V 1100 pF @ 25 V - 88W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
    DMT6004SCT

    DMT6004SCT

    MOSFET N-CH 60V 100A TO220-3

    Diodes Incorporated

    		 4,352
    RFQ
    		DMT6004SCT

    Datasheet

         		- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 60 V 100A (Tc) 10V 3.65mOhm @ 100A, 10V 4V @ 250µA 95.4 nC @ 10 V ±20V 4556 pF @ 30 V - 2.3W (Ta), 113W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220-3
    TK4R1A10PL,S4X

    TK4R1A10PL,S4X

    X35 PB-F POWER MOSFET TRANSISTOR

    Toshiba Semiconductor and Storage

    		 2,408
    RFQ
    		TK4R1A10PL,S4X

    Datasheet

         		- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 100 V 80A (Tc) 4.5V, 10V 4.1mOhm @ 40A, 10V 2.5V @ 1mA 104 nC @ 10 V ±20V 6320 pF @ 50 V - 54W (Tc) 175°C - - Through Hole TO-220SIS
    TK10A60W5,S5VX

    TK10A60W5,S5VX

    MOSFET N-CH 600V 9.7A TO220SIS

    Toshiba Semiconductor and Storage

    		 7,480
    RFQ
    		TK10A60W5,S5VX

    Datasheet

         		DTMOSIV TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 9.7A (Ta) 10V 450mOhm @ 4.9A, 10V 4.5V @ 500µA 25 nC @ 10 V ±30V 720 pF @ 300 V - 30W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
    IRF640PBF-BE3

    IRF640PBF-BE3

    MOSFET N-CH 200V 18A TO220AB

    Vishay Siliconix

    		 9,582
    RFQ
    		IRF640PBF-BE3

    Datasheet

         		- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 200 V 18A (Tc) 10V 180mOhm @ 11A, 10V 4V @ 250µA 70 nC @ 10 V ±20V 1300 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
    R6009KNX

    R6009KNX

    MOSFET N-CH 600V 9A TO220FM

    Rohm Semiconductor

    		 8,914
    RFQ
    		R6009KNX

    Datasheet

         		- TO-220-3 Full Pack Bulk Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 9A (Tc) 10V 535mOhm @ 2.8A, 10V 5V @ 1mA 16.5 nC @ 10 V ±20V 540 pF @ 25 V - 48W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220FM
    IRF620STRLPBF

    IRF620STRLPBF

    MOSFET N-CH 200V 5.2A D2PAK

    Vishay Siliconix

    		 1,622
    RFQ
    		IRF620STRLPBF

    Datasheet

         		- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 200 V 5.2A (Tc) 10V 800mOhm @ 3.1A, 10V 4V @ 250µA 14 nC @ 10 V ±20V 260 pF @ 25 V - 3W (Ta), 50W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount D2PAK
    FDPF190N15A

    FDPF190N15A

    MOSFET N-CH 150V 27.4A TO220F

    onsemi

    		 9,940
    RFQ
    		FDPF190N15A

    Datasheet

         		PowerTrench® TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 150 V 27.4A (Tc) 10V 19mOhm @ 27.4A, 10V 4V @ 250µA 39 nC @ 10 V ±20V 2685 pF @ 25 V - 33W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220F-3
    IPP040N06N3GXKSA1

    IPP040N06N3GXKSA1

    MOSFET N-CH 60V 90A TO220-3

    Infineon Technologies

    		 6,450
    RFQ

    -

    		 OptiMOS™ TO-220-3 Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 60 V 90A (Tc) 10V 4mOhm @ 90A, 10V 4V @ 90µA 98 nC @ 10 V ±20V 11000 pF @ 30 V - 188W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3
    IRF540PBF-BE3

    IRF540PBF-BE3

    MOSFET N-CH 100V 28A TO220AB

    Vishay Siliconix

    		 5,634
    RFQ
    		IRF540PBF-BE3

    Datasheet

         		- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 100 V 28A (Tc) 10V 77mOhm @ 11A, 10V 4V @ 250µA 72 nC @ 10 V ±20V 1700 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
    IXTP4N65X2

    IXTP4N65X2

    MOSFET N-CH 650V 4A TO220

    Littelfuse Inc.

    		 6,112
    RFQ
    		IXTP4N65X2

    Datasheet

         		Ultra X2 TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 4A (Tc) 10V 850mOhm @ 2A, 10V 5V @ 250µA 8.3 nC @ 10 V ±30V 455 pF @ 25 V - 80W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220
    TK3R3E08QM,S1X

    TK3R3E08QM,S1X

    UMOS10 TO-220AB 80V 3.3MOHM

    Toshiba Semiconductor and Storage

    		 8,032
    RFQ
    		TK3R3E08QM,S1X

    Datasheet

         		U-MOSX-H TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 80 V 120A (Tc) 6V, 10V 3.3mOhm @ 50A, 10V 3.5V @ 1.3mA 110 nC @ 10 V ±20V 7670 pF @ 40 V - 230W (Tc) 175°C - - Through Hole TO-220
    TK8A65D(STA4,Q,M)

    TK8A65D(STA4,Q,M)

    MOSFET N-CH 650V 8A TO220SIS

    Toshiba Semiconductor and Storage

    		 9,746
    RFQ
    		TK8A65D(STA4,Q,M)

    Datasheet

         		π-MOSVII TO-220-3 Full Pack Bulk Active N-Channel MOSFET (Metal Oxide) 650 V 8A (Ta) 10V 840mOhm @ 4A, 10V 4V @ 1mA 25 nC @ 10 V ±30V 1350 pF @ 25 V - 45W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
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