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    Home > Products  > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
    IRF654B

    IRF654B

    IRF654B - 21A, 250V, 0.14OHM, N-

    Fairchild Semiconductor

    		 894
    RFQ
    		IRF654B

    Datasheet

         		* - Bulk Active - - - - - - - - - - - - - - - - -
    FDPF12N50NZ

    FDPF12N50NZ

    POWER FIELD-EFFECT TRANSISTOR, 1

    Fairchild Semiconductor

    		 2,000
    RFQ
    		FDPF12N50NZ

    Datasheet

         		UniFET-II™ TO-220-3 Full Pack Bulk Active N-Channel MOSFET (Metal Oxide) 500 V 11.5A (Tc) 10V 520mOhm @ 5.75A, 10V 5V @ 250µA 30 nC @ 10 V ±25V 1235 pF @ 25 V - 42W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220F-3
    HUF76132P3

    HUF76132P3

    75A, 30V, 0.016OHM, N-CHANNEL MO

    Fairchild Semiconductor

    		 1,600
    RFQ
    		HUF76132P3

    Datasheet

         		* - Bulk Active - - - - - - - - - - - - - - - - -
    AM7432N-CT

    AM7432N-CT

    MOSFET N-CH 30V 27A DFN5x6

    Analog Power Inc.

    		 2,000
    RFQ
    		AM7432N-CT

    Datasheet

         		- DFN5x6 Bulk Active N-Channel MOSFET (Metal Oxide) 30 V 27A (Ta) 2.5V, 4.5V 5.9mOhm @ 19.1A, 2.5V 400mV @ 250µA (Min) 43 nC @ 4.5 V ±12V 5146 pF @ 15 V - 5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount DFN5x6
    BUK769R6-80E,118

    BUK769R6-80E,118

    NEXPERIA BUK769R6-80E - 75A, 80V

    NXP Semiconductors

    		 682
    RFQ
    		BUK769R6-80E,118

    Datasheet

         		TrenchMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active N-Channel MOSFET (Metal Oxide) 80 V 75A (Tc) 10V 9.6mOhm @ 20A, 10V 4V @ 1mA 59.8 nC @ 10 V ±20V 4682 pF @ 25 V - 182W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount D2PAK
    MFT10N70P56

    MFT10N70P56

    MOSFET - PPAK5X6 100V 70A N-Chan

    Meritek

    		 200
    RFQ
    		MFT10N70P56

    Datasheet

         		- - Strip Active - - - - - - - - - - - - - - - - -
    AMS441P

    AMS441P

    MOSFET P-CH -40V 50A DFN3X3

    Analog Power Inc.

    		 200
    RFQ
    		AMS441P

    Datasheet

         		- 8-PowerWDFN Bulk Active P-Channel MOSFET (Metal Oxide) 40 V 20A (Ta), 50A (Tc) 4.5V, 10V 7.5mOhm @ 10A, 10V 1V @ 250µA 70 nC @ 4.5 V ±20V 4147 pF @ 15 V - 4.6W (Ta), 83W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount 8-DFN (3.3x3.3)
    AM70N25-50B

    AM70N25-50B

    MOSFET N-CH 250V 62A TO-263

    Analog Power Inc.

    		 9,858
    RFQ
    		AM70N25-50B

    Datasheet

         		* - Bulk Active - - - - - - - - - - - - - - - - -
    GPI65007DF56

    GPI65007DF56

    GaNFET N-CH 650V 7A DFN5x6

    GaNPower

    		 7,012
    RFQ
    		GPI65007DF56

    Datasheet

         		- - Tape & Reel (TR) Active N-Channel GaNFET (Gallium Nitride) 650 V 7A 6V - 1.5V @ 3.5mA 2.1 nC @ 6 V +7.5V, -12V 76.1 pF @ 400 V - - -55°C ~ 150°C (TJ) - - Surface Mount -
    FCH110N65F-F155

    FCH110N65F-F155

    MOSFET N-CH 650V 35A TO247

    Fairchild Semiconductor

    		 6,934
    RFQ
    		FCH110N65F-F155

    Datasheet

         		FRFET®, SuperFET® II TO-247-3 Bulk Active N-Channel MOSFET (Metal Oxide) 650 V 35A (Tc) 10V 110mOhm @ 17.5A, 10V 5V @ 3.5mA 145 nC @ 10 V ±20V 4895 pF @ 100 V - 357W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247-3
    CC-C2-B15-0322

    CC-C2-B15-0322

    SiC Power MOSFET 1200V 12A

    CoolCAD

    		 5,086
    RFQ
    		CC-C2-B15-0322

    Datasheet

         		- TO-247-4 Bulk Active N-Channel SiCFET (Silicon Carbide) 1200 V 12A (Ta) 15V 135mOhm @ 10A, 15V 3.2V @ 5mA 40 nC @ 15 V +15V, -5V 1810 pF @ 200 V - 100W (Tc) -40°C ~ 175°C (TJ) - - Through Hole TO-247
    FCH043N60

    FCH043N60

    POWER FIELD-EFFECT TRANSISTOR, 7

    Fairchild Semiconductor

    		 7,200
    RFQ
    		FCH043N60

    Datasheet

         		SuperFET® II TO-247-3 Bulk Active N-Channel MOSFET (Metal Oxide) 600 V 75A (Tc) 10V 43mOhm @ 38A, 10V 3.5V @ 250µA 215 nC @ 10 V ±20V 12225 pF @ 400 V - 592W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247-3
    NC1M120C75HTNG

    NC1M120C75HTNG

    SiC MOSFET N 1200V 75mohm 47A 4

    NovuSem

    		 200
    RFQ
    		NC1M120C75HTNG

    Datasheet

         		NC1M TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 47A (Tc) 20V 75mOhm @ 20A, 20V 2.8V @ 5mA - +20V, -5V 1450 pF @ 1000 V - 288W (Ta) -55°C ~ 175°C (TJ) - - Through Hole TO-247-4L
    NC1M120C75RRNG

    NC1M120C75RRNG

    SiC MOSFET N 1200V 75mohm 46A 7

    NovuSem

    		 200
    RFQ
    		NC1M120C75RRNG

    Datasheet

         		NC1M TO-263-8, DPak (7 Leads + Tab) Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 1200 V 46A (Tc) 18V 75mOhm @ 20A, 18V 2.3V @ 5mA - +18V, -5V 1402 pF @ 1000 V - 240W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount TO-263-7L
    IRFF130

    IRFF130

    Power Field-Effect Transistor, 8

    Flip Electronics

    		 4,316
    RFQ

    -

    		 - - Tray Active - - - - - - - - - - - - - - - - -
    NC1M120C40GTNG

    NC1M120C40GTNG

    SiC MOSFET N 1200V 40mohm 76A 3

    NovuSem

    		 200
    RFQ
    		NC1M120C40GTNG

    Datasheet

         		NC1M TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 76A (Tc) 20V 40mOhm @ 35A, 20V 2.8V @ 10mA - +20V, -5V 2534 pF @ 1000 V - 375W (Ta) -55°C ~ 175°C (TJ) - - Through Hole TO-247-3L
    NC1M120C40HTNG

    NC1M120C40HTNG

    SiC MOSFET N 1200V 40mohm 75A 4

    NovuSem

    		 200
    RFQ
    		NC1M120C40HTNG

    Datasheet

         		NC1M TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 75A (Tc) 20V 40mOhm @ 35A, 20V 2.8V @ 10mA - +20V, -5V 2534 pF @ 1000 V - 366W (Ta) -55°C ~ 175°C (TJ) - - Through Hole TO-247-4L
    NC1M120C35HTNG

    NC1M120C35HTNG

    SIC MOSFET 1200V 35M 75A TO247-

    NextGen Components

    		 200
    RFQ
    		NC1M120C35HTNG

    Datasheet

         		NC1M TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 1.2 kV 75A (Tc) - 50mOhm @ 33.3A, 18V 4.5V @ 15mA 190 nC @ 18 V +18V, -5V 2834 pF @ 1 kV - 386W (Ta) -55°C ~ 175°C (TJ) - - Through Hole TO-247-4L
    NC2M120C20HTNG

    NC2M120C20HTNG

    SIC MOSFET 1200V 20M 126A TO247

    NextGen Components

    		 200
    RFQ
    		NC2M120C20HTNG

    Datasheet

         		NC2M TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 1.2 kV 126A (Tc) - 30mOhm @ 63A, 20V 4.5V @ 20mA 282 nC @ 20 V +20V, -5V 4615 pF @ 1 kV - 625W (Ta) -55°C ~ 175°C (TJ) - - Through Hole TO-247-4L
    AMTP65H150G4LSGB

    AMTP65H150G4LSGB

    GAN FET N-CH 650V 13A DFN8X8

    Analog Power Inc.

    		 6,338
    RFQ
    		AMTP65H150G4LSGB

    Datasheet

         		- 4-PowerTSFN Bulk Active N-Channel GaNFET (Gallium Nitride) 650 V 13A (Tc) 10V 180mOhm @ 10A, 10V 1V @ 250µA 8.8 nC @ 6 V ±18V 760 pF @ 400 V - 52W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 4-DFN (8x8)
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