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FETs, MOSFETs

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
AS2M040120P

AS2M040120P

N-CHANNEL SILICON CARBIDE POWER

ANBON SEMICONDUCTOR (INT'L) LIMITED

9,788
RFQ
AS2M040120P

Datasheet

- TO-247-3 Bulk Active N-Channel SiCFET (Silicon Carbide) 1200 V 60A (Tc) 20V 55mOhm @ 40A, 20V 4V @ 10mA 142 nC @ 20 V +25V, -10V 2946 pF @ 1000 V - 330W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247-3
SCT20N120AG

SCT20N120AG

SICFET N-CH 1200V 20A HIP247

STMicroelectronics

3,024
RFQ
SCT20N120AG

Datasheet

- TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 20A (Tc) 20V 239mOhm @ 10A, 20V 3.5V @ 1mA 45 nC @ 20 V +25V, -10V 650 pF @ 400 V - 153W (Tc) -55°C ~ 200°C (TJ) Automotive AEC-Q101 Through Hole HiP247™
HCT7000M

HCT7000M

MOSFET N-CH 60V 200MA 3SMD

TT Electronics/Optek Technology

4,860
RFQ
HCT7000M

Datasheet

- 3-SMD, No Lead Bulk Active N-Channel MOSFET (Metal Oxide) 60 V 200mA (Ta) 10V 5Ohm @ 500mA, 10V 3V @ 1mA - ±40V 60 pF @ 25 V - 300mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 3-SMD
IXFX64N60Q3

IXFX64N60Q3

MOSFET N-CH 600V 64A PLUS247-3

IXYS

9,746
RFQ
IXFX64N60Q3

Datasheet

HiPerFET™ TO-247-3 Variant Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 64A (Tc) 10V 95mOhm @ 32A, 10V 6.5V @ 4mA 190 nC @ 10 V ±30V 9930 pF @ 25 V - 1250W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PLUS247™-3
APT40N60JCU2

APT40N60JCU2

MOSFET N-CH 600V 40A SOT227

Microchip Technology

5,722
RFQ
APT40N60JCU2

Datasheet

- SOT-227-4, miniBLOC Bulk Obsolete N-Channel MOSFET (Metal Oxide) 600 V 40A (Tc) 10V 70mOhm @ 20A, 10V 3.9V @ 1mA 259 nC @ 10 V ±20V 7015 pF @ 25 V - 290W (Tc) -55°C ~ 150°C (TJ) - - Chassis Mount SOT-227
GPI65060DFC

GPI65060DFC

GaNFET N-CH 650V 60A DFN8x8 cu

GaNPower

2,876
RFQ
GPI65060DFC

Datasheet

- 8-DFN Tape & Reel (TR) Active N-Channel GaNFET (Gallium Nitride) 650 V 60A 6V 30mOhm @ 6A, 12V 1.2V @ 3.5mA 16 nC @ 6 V +7.5V, -12V 420 pF @ 400 V - - -55°C ~ 150°C (TJ) - - Surface Mount 8-DFN (8x8)
AS1M025120T

AS1M025120T

N-CHANNEL SILICON CARBIDE POWER

ANBON SEMICONDUCTOR (INT'L) LIMITED

3,676
RFQ
AS1M025120T

Datasheet

- TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 65A (Tc) 20V 34mOhm @ 50A, 20V 4V @ 15mA 195 nC @ 20 V +25V, -10V 4200 pF @ 1000 V - 370W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247-4
APT77N60JC3

APT77N60JC3

MOSFET N-CH 600V 77A ISOTOP

Microchip Technology

2,014
RFQ
APT77N60JC3

Datasheet

- SOT-227-4, miniBLOC Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 77A (Tc) 10V 35mOhm @ 60A, 10V 3.9V @ 5.4mA 640 nC @ 10 V ±20V 13600 pF @ 25 V - 568W (Tc) -55°C ~ 150°C (TJ) - - Chassis Mount ISOTOP®
IXFZ520N075T2

IXFZ520N075T2

MOSFET N-CH 75V 465A DE475

IXYS

6,868
RFQ
IXFZ520N075T2

Datasheet

HiPerFET™, TrenchT2™ 6-SMD, Flat Leads Tube Obsolete N-Channel MOSFET (Metal Oxide) 75 V 465A (Tc) 10V 1.3mOhm @ 100A, 10V 4V @ 8mA 545 nC @ 10 V ±20V 41000 pF @ 25 V - 600W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount DE475
APT40M35JVR

APT40M35JVR

MOSFET N-CH 400V 93A SOT227

Microchip Technology

2,852
RFQ

-

POWER MOS V® SOT-227-4, miniBLOC Tube Active N-Channel MOSFET (Metal Oxide) 400 V 93A (Tc) 10V 35mOhm @ 46.5A, 10V 4V @ 5mA 1065 nC @ 10 V ±30V 20160 pF @ 25 V - 700W (Tc) -55°C ~ 150°C (TJ) - - Chassis Mount SOT-227 (ISOTOP®)
APTML100U60R020T1AG

APTML100U60R020T1AG

MOSFET N-CH 1000V 20A SP1

Microchip Technology

7,146
RFQ
APTML100U60R020T1AG

Datasheet

- SP1 Bulk Active N-Channel MOSFET (Metal Oxide) 1000 V 20A (Tc) 10V 720mOhm @ 10A, 10V 4V @ 2.5mA - ±30V 6000 pF @ 25 V - 520W (Tc) -40°C ~ 150°C (TJ) - - Chassis Mount SP1
VMO650-01F

VMO650-01F

MOSFET N-CH 100V 690A Y3-DCB

IXYS

4,552
RFQ

-

HiPerFET™ Y3-DCB Bulk Obsolete N-Channel MOSFET (Metal Oxide) 100 V 690A (Tc) 10V 1.8mOhm @ 500mA, 10V 6V @ 130mA 2300 nC @ 10 V ±20V 59000 pF @ 25 V - 2500W (Tc) -40°C ~ 150°C (TJ) - - Chassis Mount Y3-DCB
STDLED656

STDLED656

MOSFET N-CH 650V 6A DPAK

STMicroelectronics

1,938
RFQ
STDLED656

Datasheet

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 650 V 6A (Tc) 10V 1.3Ohm @ 2.7A, 10V 4.5V @ 50µA 34 nC @ 10 V ±30V 895 pF @ 100 V - 70W (Tc) 150°C (TJ) - - Surface Mount DPAK
AM2341P-CT

AM2341P-CT

MOSFET P-CH -40V 3A SOT-23

Analog Power Inc.

1,400
RFQ
AM2341P-CT

Datasheet

- SOT-23 Strip Active P-Channel MOSFET (Metal Oxide) 40 V 3A (Ta) 4.5V, 10V 140mOhm @ 2.1A, 4.5V 1V @ 250µA 5.8 nC @ 4.5 V ±20V 384 pF @ 15 V - 1.3W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23
G400P06T

G400P06T

MOSFET P-CH 60V 32A TO-220

Goford Semiconductor

2,000
RFQ
G400P06T

Datasheet

TrenchFET® TO-220-3 Tube Active P-Channel MOSFET (Metal Oxide) - 32A (Tc) 10V 40mOhm @ 12A, 10V 3V @ 250µA - ±20V - - 110W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220
G18N20T

G18N20T

MOSFET N-CH 200V 18A 110W 190m(m

Goford Semiconductor

2,000
RFQ
G18N20T

Datasheet

- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 200 V 18A (Tc) 10V 190mOhm @ 8A, 10V 4V @ 250µA 31 nC @ 5 V ±30V 1120 pF @ 100 V - 110W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220
GT700P08T

GT700P08T

MOSFET P-CH 80V 25A TO-220

Goford Semiconductor

2,000
RFQ
GT700P08T

Datasheet

SGT TO-220-3 Tube Active P-Channel MOSFET (Metal Oxide) - 25A (Tc) 10V 72mOhm @ 2A, 10V 3.5V @ 250µA - ±20V - - 125W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220
18N20J

18N20J

MOSFET N-CH 200V 18A TO-251

Goford Semiconductor

2,000
RFQ
18N20J

Datasheet

TrenchFET® TO-251-3 Short Leads, IPAK, TO-251AA Tube Active N-Channel MOSFET (Metal Oxide) - 18A (Tc) 10V 160mOhm @ 9A, 10V 3V @ 250µA - ±30V - - 65.8W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-251
GT130N10F

GT130N10F

MOSFET N-CH 100V 45A 41.7W 12m(

Goford Semiconductor

2,000
RFQ
GT130N10F

Datasheet

- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 100 V 45A (Tc) 10V 12mOhm @ 20A, 10V 4V @ 250µA 18 nC @ 10 V ±20V 1215 pF @ 50 V - 41.7W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220F
GT180N12M

GT180N12M

MOSFET N-CH 120V 55A 96W 17m(max

Goford Semiconductor

1,600
RFQ
GT180N12M

Datasheet

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 120 V 55A (Tc) 10V 17mOhm @ 20A, 10V 4.5V @ 250µA 22 nC @ 10 V ±20V 1635 pF @ 60 V - 96W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263
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