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FETs, MOSFETs

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
AOK060V65X2

AOK060V65X2

650V SILICON CARBIDE MOSFET

Alpha & Omega Semiconductor Inc.

480
RFQ
AOK060V65X2

Datasheet

- TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 650 V 29A (Tc) 15V 80mOhm @ 6A, 15V 3.5V @ 6mA 39.4 nC @ 15 V +15V, -5V 1165 pF @ 400 V - 103W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247
AOM060V65X2

AOM060V65X2

650V SILICON CARBIDE MOSFET

Alpha & Omega Semiconductor Inc.

480
RFQ
AOM060V65X2

Datasheet

- TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 650 V 29A (Tc) 15V 80mOhm @ 6A, 15V 3.5V @ 6mA 39.4 nC @ 15 V +15V, -5V 1165 pF @ 400 V - 103W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247-4L
SIHF074N65E-GE3

SIHF074N65E-GE3

E SERIES POWER MOSFET TO-220 FUL

Vishay Siliconix

1,976
RFQ
SIHF074N65E-GE3

Datasheet

E TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 650 V 14A (Tc) 10V 79mOhm @ 15A, 10V 5V @ 250µA 80 nC @ 10 V ±30V 2904 pF @ 100 V - 39W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220 Full Pack
FCMT080N65S3

FCMT080N65S3

MOSFET N-CH 650V 38A 4TDFN

onsemi

6,000
RFQ

-

SuperFET® III 4-PowerTSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 38A (Tc) 10V 80mOhm @ 19A, 10V 4.5V @ 880µA 71 nC @ 10 V ±30V 2765 pF @ 400 V - 260W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 4-TDFN (8x8)
SICW400N170A-BP

SICW400N170A-BP

MOSFET N-CH 1700V 6A TO247AB

Micro Commercial Co

3,590
RFQ
SICW400N170A-BP

Datasheet

- TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 1700 V 6A (Tc) 16V, 20V 500mOhm @ 3A, 20V 4.5V @ 5mA 31 nC @ 20 V +25V, -5V 333 pF @ 1000 V - 125W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247AB
NTBG032N065M3S

NTBG032N065M3S

SIC MOS D2PAK-7L 32MOHM 650V M3S

onsemi

1,230
RFQ

-

- TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiC (Silicon Carbide Junction Transistor) 650 V 52A (Tc) 15V, 18V 44mOhm @ 15A, 18V 4V @ 7.5mA 55 nC @ 18 V +22V, -8V 1409 pF @ 400 V - 200W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK-7
PSMN015N10NS2_R2_00201

PSMN015N10NS2_R2_00201

100V/ 1.5M / TOLL FOR ESS/ BBU/

Panjit International Inc.

2,968
RFQ
PSMN015N10NS2_R2_00201

Datasheet

- 8-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 395A 4.5V, 10V - - 128 nC @ 10 V ±20V - - - - - - Surface Mount TOLL
IMT40R025M2HXTMA1

IMT40R025M2HXTMA1

SIC-MOS

Infineon Technologies

3,976
RFQ
IMT40R025M2HXTMA1

Datasheet

CoolSiC™ 8-PowerSFN Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 400 V 9A (Ta), 68A (Tc) 15V, 18V 32.1mOhm @ 15.7A, 18V 5.6V @ 5.6mA 36 nC @ 18 V +23V, -7V 1690 pF @ 200 V - 3.8W (Ta), 214W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-HSOF-8-2
IMZA75R060M1HXKSA1

IMZA75R060M1HXKSA1

SILICON CARBIDE MOSFET

Infineon Technologies

476
RFQ
IMZA75R060M1HXKSA1

Datasheet

CoolSiC™ TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 750 V 32A (Tc) 15V, 20V 55mOhm @ 11.1A, 20V 5.6V @ 4mA 23 nC @ 18 V +23V, -5V 779 pF @ 500 V - 144W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO247-4
AOK150V120X2Q

AOK150V120X2Q

1200V SILICON CARBIDE MOSFET

Alpha & Omega Semiconductor Inc.

480
RFQ
AOK150V120X2Q

Datasheet

- TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 20A (Tc) 15V 195mOhm @ 3.9A, 15V 3.6V @ 3.9mA 28.3 nC @ 15 V +18V, -8V 664 pF @ 800 V - 115W (Tj) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247
PJMP099N60EC_T0_00601

PJMP099N60EC_T0_00601

600V/ 99M / 39A/ EASY TO DRIVER

Panjit International Inc.

4,000
RFQ
PJMP099N60EC_T0_00601

Datasheet

- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 39A (Tc) 10V 99mOhm @ 19.5A, 10V 4V @ 250µA 60 nC @ 10 V ±30V 2568 pF @ 400 V - 308W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB-L
IPTG020N13NM6ATMA1

IPTG020N13NM6ATMA1

TRENCH >=100V

Infineon Technologies

2,976
RFQ
IPTG020N13NM6ATMA1

Datasheet

- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
SIHP074N65E-GE3

SIHP074N65E-GE3

E SERIES POWER MOSFET TO-220AB,

Vishay Siliconix

2,000
RFQ
SIHP074N65E-GE3

Datasheet

E TO-220-3 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 35A (Tc) 10V 79mOhm @ 15A, 10V 5V @ 250µA 80 nC @ 10 V ±30V 2904 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
NVMTS001N06CLTXG

NVMTS001N06CLTXG

T6 60V LL PQFN8*8 EXPANSI

onsemi

10,866
RFQ
NVMTS001N06CLTXG

Datasheet

- 8-PowerTDFN Tape & Reel (TR) Active - - - 56.9A (Ta), 398.2A (Tc) - - - - - - - - - Automotive AEC-Q101 Surface Mount 8-DFNW (8.3x8.4)
IPQC60R040S7AXTMA1

IPQC60R040S7AXTMA1

MOSFET

Infineon Technologies

1,460
RFQ
IPQC60R040S7AXTMA1

Datasheet

CoolMOS™ 22-PowerBSOP Module Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 14A (Tc) 12V 40mOhm @ 13A, 12V 4.5V @ 790µA 83 nC @ 12 V ±20V - - 272W (Tc) -40°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount PG-HDSOP-22
IPDQ60R040S7AXTMA1

IPDQ60R040S7AXTMA1

MOSFET

Infineon Technologies

1,440
RFQ
IPDQ60R040S7AXTMA1

Datasheet

CoolMOS™ 22-PowerBSOP Module Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 14A (Tc) 12V 40mOhm @ 13A, 12V 4.5V @ 790µA 83 nC @ 12 V ±20V - - 272W (Tc) -40°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount PG-HDSOP-22-1
SCT3160KW7HRTL

SCT3160KW7HRTL

1200V, 17A, 7-PIN SMD, TRENCH-ST

Rohm Semiconductor

3,980
RFQ
SCT3160KW7HRTL

Datasheet

- TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 1200 V 17A (Tc) 18V 208mOhm @ 5A, 18V 5.6V @ 2.5mA 42 nC @ 18 V +22V, -4V 398 pF @ 800 V - - 175°C (TJ) Automotive AEC-Q101 Surface Mount TO-263-7L
TK068N65Z5,S1F

TK068N65Z5,S1F

650V DTMOS6-HSD TO-247 68MOHM

Toshiba Semiconductor and Storage

470
RFQ
TK068N65Z5,S1F

Datasheet

DTMOSVI TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 37A (Ta) 10V 68mOhm @ 18.5A, 10V 4.5V @ 1.69mA 68 nC @ 10 V ±30V 3765 pF @ 300 V - 270W (Tc) 150°C - - Through Hole TO-247
SIHG47N65E-GE3

SIHG47N65E-GE3

MOSFET N-CH 650V 47A TO247AC

Vishay Siliconix

972
RFQ
SIHG47N65E-GE3

Datasheet

- TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 47A (Tc) 10V 72mOhm @ 24A, 10V 4V @ 250µA 273 nC @ 10 V ±30V 5682 pF @ 100 V - 417W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247AC
SCT3160KWATL

SCT3160KWATL

1200V, 17A, 7-PIN SMD, TRENCH-ST

Rohm Semiconductor

2,000
RFQ
SCT3160KWATL

Datasheet

- TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 1200 V 17A (Tj) 18V 208mOhm @ 5A, 18V 5.6V @ 2.5mA 42 nC @ 18 V +22V, -4V 398 pF @ 800 V - - 175°C (TJ) - - Surface Mount TO-263-7LA
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