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    Home > Products  > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
    AIMBG75R060M1HXTMA1

    AIMBG75R060M1HXTMA1

    AIMBG75R060M1HXTMA1

    Infineon Technologies

    		 4,994
    RFQ

    -

    		 CoolSiC™ TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 750 V 34A (Tj) 15V, 20V 55mOhm @ 11.1A, 20V 5.6V @ 4mA 23 nC @ 18 V +23V, -5V 779 pF @ 500 V - 167W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PG-TO263-7
    AOT66518L

    AOT66518L

    MOSFET N-CH 150V 30A/120A TO220

    Alpha & Omega Semiconductor Inc.

    		 1,662
    RFQ
    		AOT66518L

    Datasheet

         		AlphaSGT™ TO-220-3 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 150 V 30A (Ta), 120A (Tc) 8V, 10V 5mOhm @ 20A, 10V 3.7V @ 250µA 115 nC @ 10 V ±20V 6460 pF @ 75 V - 10W (Ta), 375W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220
    AOB66914L

    AOB66914L

    N

    Alpha & Omega Semiconductor Inc.

    		 1,600
    RFQ
    		AOB66914L

    Datasheet

         		AlphaSGT™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 45A (Ta), 120A (Tc) 6V, 10V 3.5mOhm @ 20A, 6V 3.5V @ 250µA 220 nC @ 10 V ±20V 12500 pF @ 50 V - 10W (Ta), 375W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263 (D2PAK)
    IPZ60R060C7XKSA1

    IPZ60R060C7XKSA1

    MOSFET N-CH 600V 35A TO247-4

    Infineon Technologies

    		 458
    RFQ
    		IPZ60R060C7XKSA1

    Datasheet

         		CoolMOS™ C7 TO-247-4 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 35A (Tc) 10V 60mOhm @ 15.9A, 10V 4V @ 800µA 68 nC @ 10 V ±20V 2850 pF @ 400 V - 162W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO247-4
    IMW65R050M2HXKSA1

    IMW65R050M2HXKSA1

    SILICON CARBIDE MOSFET

    Infineon Technologies

    		 414
    RFQ
    		IMW65R050M2HXKSA1

    Datasheet

         		CoolSiC™ Gen 2 TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 650 V 38A (Tc) 15V, 20V 46mOhm @ 18.2A, 20V 5.6V @ 3.7mA 22 nC @ 18 V +23V, -7V 790 pF @ 400 V - 153W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO247-3-40
    NVMTS001N06CTXG

    NVMTS001N06CTXG

    MOSFET N-CH 60V 53.7A/376A 8DFNW

    onsemi

    		 12,000
    RFQ
    		NVMTS001N06CTXG

    Datasheet

         		- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 53.7A (Ta), 376A (Tc) 10V 0.91mOhm @ 50A, 10V 4V @ 250µA 113 nC @ 10 V ±20V 8705 pF @ 30 V - 5W (Ta), 244W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 8-DFNW (8.3x8.4)
    IPDQ65R040CFD7XTMA1

    IPDQ65R040CFD7XTMA1

    HIGH POWER_NEW

    Infineon Technologies

    		 1,488
    RFQ
    		IPDQ65R040CFD7XTMA1

    Datasheet

         		CoolMOS™ 22-PowerBSOP Module Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 64A (Tc) 10V 40mOhm @ 24.8A, 10V 4.5V @ 1.24mA 97 nC @ 10 V ±20V 4975 pF @ 400 V - 357W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-HDSOP-22-1
    IPT020N13NM6ATMA1

    IPT020N13NM6ATMA1

    TRENCH >=100V

    Infineon Technologies

    		 2,832
    RFQ
    		IPT020N13NM6ATMA1

    Datasheet

         		- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
    GS-065-014-6-LR-MR

    GS-065-014-6-LR-MR

    GS-065-014-6-LR-MR

    Infineon Technologies Canada Inc.

    		 454
    RFQ

    -

    		 - 8-VDFN Exposed Pad Tape & Reel (TR) Active N-Channel GaNFET (Gallium Nitride) 700 V 15.2A (Tc) 6V 138mOhm @ 4A, 6V 2.6V @ 3mA 2.7 nC @ 6 V +7V, -10V 85 pF @ 400 V - - -55°C ~ 150°C (TJ) - - Surface Mount 8-PDFN (8x8)
    AOTL66912Q

    AOTL66912Q

    LINEAR IC

    Alpha & Omega Semiconductor Inc.

    		 3,796
    RFQ

    -

    		 AlphaSGT™ 8-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 53A (Ta), 370A (Tc) 6V, 10V 1.7mOhm @ 100A, 10V 3.5V @ 250µA 220 nC @ 10 V ±20V 12500 pF @ 50 V - 10W (Ta), 500W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount TOLLA
    IMT65R072M1HXUMA1

    IMT65R072M1HXUMA1

    SILICON CARBIDE MOSFET

    Infineon Technologies

    		 3,838
    RFQ
    		IMT65R072M1HXUMA1

    Datasheet

         		CoolSiC™ 8-PowerSFN Tape & Reel (TR) Active - SiCFET (Silicon Carbide) 650 V - 18V - - - - - - - - - - Surface Mount PG-HSOF-8-2
    RX3G18BBGC16

    RX3G18BBGC16

    NCH 40V 180A, TO-220AB, POWER MO

    Rohm Semiconductor

    		 1,874
    RFQ
    		RX3G18BBGC16

    Datasheet

         		- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 40 V 180A (Tc) 4.5V, 10V 1.47mOhm @ 90A, 10V 2.5V @ 1mA 210 nC @ 10 V ±20V 13200 pF @ 20 V - 192W (Tc) 150°C (TJ) - - Through Hole TO-220AB
    NTHL075N065SC1

    NTHL075N065SC1

    SILICON CARBIDE (SIC) MOSFET - E

    onsemi

    		 1,460
    RFQ
    		NTHL075N065SC1

    Datasheet

         		- TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 650 V 38A (Tc) 15V, 18V 85mOhm @ 15A, 18V 4.3V @ 5mA 61 nC @ 18 V +22V, -8V 1196 pF @ 325 V - 148W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247-3
    SIHK075N60EF-T1GE3

    SIHK075N60EF-T1GE3

    E SERIES POWER MOSFET WITH FAST

    Vishay Siliconix

    		 3,852
    RFQ
    		SIHK075N60EF-T1GE3

    Datasheet

         		EF 8-PowerBSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 33A (Tc) 10V 71mOhm @ 15A, 10V 5V @ 250µA 72 nC @ 10 V ±30V 2954 pF @ 100 V - 192W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK®10 x 12
    C3M0350120J-TR

    C3M0350120J-TR

    SIC, MOSFET, 350M,1200V, TO-263-

    Wolfspeed, Inc.

    		 1,554
    RFQ
    		C3M0350120J-TR

    Datasheet

         		C3M™ TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 1200 V 7.2A (Tc) 15V 455mOhm @ 3.6A, 15V 3.6V @ 1mA 13 nC @ 15 V +15V, -4V 345 pF @ 1000 V - 40.8W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263-7
    MSC060SMA070SCT/R

    MSC060SMA070SCT/R

    MOSFET SIC 700 V 60 MOHM PSMT

    Microchip Technology

    		 2,600
    RFQ

    -

    		 - - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
    MSC060SMA070SDT/R

    MSC060SMA070SDT/R

    MOSFET SIC 700 V 60 MOHM TO-263-

    Microchip Technology

    		 1,580
    RFQ
    		MSC060SMA070SDT/R

    Datasheet

         		mSiC™ TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 700 V 51A (Tc) 18V, 20V 75mOhm @ 20A, 20V 5V @ 1mA 56 nC @ 20 V +23V, -10V 1160 pF @ 700 V - 240W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263-7
    IMZA65R050M2HXKSA1

    IMZA65R050M2HXKSA1

    SILICON CARBIDE MOSFET

    Infineon Technologies

    		 410
    RFQ
    		IMZA65R050M2HXKSA1

    Datasheet

         		CoolSiC™ Gen 2 TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 650 V 38A (Tc) 15V, 20V 46mOhm @ 18.2A, 20V 5.6V @ 3.7mA 22 nC @ 18 V +23V, -7V 790 pF @ 400 V - 153W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO247-4-8
    SICW1000N170A-BP

    SICW1000N170A-BP

    N-CHANNEL MOSFET,TO-247AB

    Micro Commercial Co

    		 600
    RFQ
    		SICW1000N170A-BP

    Datasheet

         		- TO-247-3 Bulk Active N-Channel SiCFET (Silicon Carbide) 1700 V 3A 15V, 20V 1.32Ohm @ 1.5A, 20V 4.5V @ 1mA 15.5 nC @ 20 V +25V, -5V 124 pF @ 1000 V - 69W -55°C ~ 150°C (TJ) - - Through Hole TO-247AB
    MSJB11N80A-TP

    MSJB11N80A-TP

    N-CHANNEL MOSFET, D2-PAK

    Micro Commercial Co

    		 3,200
    RFQ
    		MSJB11N80A-TP

    Datasheet

         		- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 800 V 11A (Tc) 10V 470mOhm @ 7.1A, 10V 4.5V @ 250µA 24 nC @ 10 V ±20V 958 pF @ 400 V - 156W (Tj) -55°C ~ 150°C (TJ) - - Surface Mount D2PAK
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