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    Home > Products  > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
    IXFN80N50P

    IXFN80N50P

    MOSFET N-CH 500V 66A SOT227B

    Littelfuse Inc.

    		 3,912
    RFQ
    		IXFN80N50P

    Datasheet

         		HiPerFET™, Polar SOT-227-4, miniBLOC Tube Active N-Channel MOSFET (Metal Oxide) 500 V 66A (Tc) 10V 65mOhm @ 500mA, 10V 5V @ 8mA 195 nC @ 10 V ±30V 12700 pF @ 25 V - 700W (Tc) -55°C ~ 150°C (TJ) - - Chassis Mount SOT-227B
    IXTN110N20L2

    IXTN110N20L2

    MOSFET N-CH 200V 100A SOT227B

    Littelfuse Inc.

    		 616
    RFQ
    		IXTN110N20L2

    Datasheet

         		Linear L2™ SOT-227-4, miniBLOC Tube Active N-Channel MOSFET (Metal Oxide) 200 V 100A (Tc) 10V 24mOhm @ 55A, 10V 4.5V @ 3mA 500 nC @ 10 V ±20V 23000 pF @ 25 V - 735W (Tc) -55°C ~ 150°C (TJ) - - Chassis Mount SOT-227B
    IXTX90N25L2

    IXTX90N25L2

    MOSFET N-CH 250V 90A PLUS247-3

    Littelfuse Inc.

    		 884
    RFQ
    		IXTX90N25L2

    Datasheet

         		Linear L2™ TO-247-3 Variant Tube Active N-Channel MOSFET (Metal Oxide) 250 V 90A (Tc) 10V 33mOhm @ 45A, 10V 4.5V @ 3mA 640 nC @ 10 V ±20V 23000 pF @ 25 V - 960W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PLUS247™-3
    MKE38RK600DFEL-TRR

    MKE38RK600DFEL-TRR

    MOSFET N-CH 600V 50A SMPD

    IXYS

    		 400
    RFQ
    		MKE38RK600DFEL-TRR

    Datasheet

         		CoolMOS™ 9-SMD Module Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 50A (Tc) 10V 45mOhm @ 44A, 10V 3.5V @ 3mA 190 nC @ 10 V ±20V 6800 pF @ 100 V - - -55°C ~ 150°C (TJ) - - Surface Mount ISOPLUS-SMPD™.B
    IXFK32N100Q3

    IXFK32N100Q3

    MOSFET N-CH 1000V 32A TO264AA

    Littelfuse Inc.

    		 1,388
    RFQ
    		IXFK32N100Q3

    Datasheet

         		HiPerFET™, Q3 Class TO-264-3, TO-264AA Tube Active N-Channel MOSFET (Metal Oxide) 1000 V 32A (Tc) 10V 320mOhm @ 16A, 10V 6.5V @ 8mA 195 nC @ 10 V ±30V 9940 pF @ 25 V - 1250W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-264AA (IXFK)
    IXTX46N50L

    IXTX46N50L

    MOSFET N-CH 500V 46A PLUS247-3

    Littelfuse Inc.

    		 1,372
    RFQ
    		IXTX46N50L

    Datasheet

         		Linear TO-247-3 Variant Tube Active N-Channel MOSFET (Metal Oxide) 500 V 46A (Tc) 20V 160mOhm @ 500mA, 20V 6V @ 250µA 260 nC @ 15 V ±30V 7000 pF @ 25 V - 700W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PLUS247™-3
    IXFN120N65X2

    IXFN120N65X2

    MOSFET N-CH 650V 108A SOT227B

    Littelfuse Inc.

    		 1,056
    RFQ
    		IXFN120N65X2

    Datasheet

         		HiPerFET™, Ultra X2 SOT-227-4, miniBLOC Tube Active N-Channel MOSFET (Metal Oxide) 650 V 108A (Tc) 10V 24mOhm @ 54A, 10V 5.5V @ 8mA 225 nC @ 10 V ±30V 15500 pF @ 25 V - 890W (Tc) -55°C ~ 150°C (TJ) - - Chassis Mount SOT-227B
    MSC025SMA120S

    MSC025SMA120S

    SICFET N-CH 1.2KV 100A D3PAK

    Microchip Technology

    		 254
    RFQ
    		MSC025SMA120S

    Datasheet

         		- TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 89A (Tc) - - - - - - - - -55°C ~ 175°C (TJ) - - Surface Mount D3PAK
    IXFB30N120P

    IXFB30N120P

    MOSFET N-CH 1200V 30A PLUS264

    Littelfuse Inc.

    		 896
    RFQ
    		IXFB30N120P

    Datasheet

         		HiPerFET™, Polar TO-264-3, TO-264AA Tube Active N-Channel MOSFET (Metal Oxide) 1200 V 30A (Tc) 10V 350mOhm @ 500mA, 10V 6.5V @ 1mA 310 nC @ 10 V ±20V 22500 pF @ 25 V - 1250W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PLUS264™
    IXFN360N15T2

    IXFN360N15T2

    MOSFET N-CH 150V 310A SOT227B

    Littelfuse Inc.

    		 500
    RFQ
    		IXFN360N15T2

    Datasheet

         		HiPerFET™, TrenchT2™ SOT-227-4, miniBLOC Tube Active N-Channel MOSFET (Metal Oxide) 150 V 310A (Tc) 10V 4mOhm @ 60A, 10V 5V @ 8mA 715 nC @ 10 V ±20V 47500 pF @ 25 V - 1070W (Tc) -55°C ~ 175°C (TJ) - - Chassis Mount SOT-227B
    IXFN38N100P

    IXFN38N100P

    MOSFET N-CH 1000V 38A SOT-227B

    Littelfuse Inc.

    		 540
    RFQ
    		IXFN38N100P

    Datasheet

         		HiPerFET™, Polar SOT-227-4, miniBLOC Tube Active N-Channel MOSFET (Metal Oxide) 1000 V 38A (Tc) 10V 210mOhm @ 19A, 10V 6.5V @ 1mA 350 nC @ 10 V ±30V 24000 pF @ 25 V - 1000W (Tc) -55°C ~ 150°C (TJ) - - Chassis Mount SOT-227B
    IXFN300N20X3

    IXFN300N20X3

    MOSFET N-CH 200V 300A SOT227B

    Littelfuse Inc.

    		 542
    RFQ
    		IXFN300N20X3

    Datasheet

         		HiPerFET™, Ultra X3 SOT-227-4, miniBLOC Tube Active N-Channel MOSFET (Metal Oxide) 200 V 300A (Tc) 10V 3.5mOhm @ 150A, 10V 4.5V @ 8mA 375 nC @ 10 V ±20V 23800 pF @ 25 V - 695W (Tc) -55°C ~ 150°C (TJ) - - Chassis Mount SOT-227B
    SCT3030KLGC11

    SCT3030KLGC11

    SICFET N-CH 1200V 72A TO247N

    Rohm Semiconductor

    		 530
    RFQ
    		SCT3030KLGC11

    Datasheet

         		- TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 72A (Tc) 18V 39mOhm @ 27A, 18V 5.6V @ 13.3mA 131 nC @ 18 V +22V, -4V 2222 pF @ 800 V - 339W (Tc) 175°C (TJ) - - Through Hole TO-247N
    TW015N120C,S1F

    TW015N120C,S1F

    G3 1200V SIC-MOSFET TO-247 15MO

    Toshiba Semiconductor and Storage

    		 5,586
    RFQ
    		TW015N120C,S1F

    Datasheet

         		- TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 100A (Tc) 18V 20mOhm @ 50A, 18V 5V @ 11.7mA 158 nC @ 18 V +25V, -10V 6000 pF @ 800 V - 431W (Tc) 175°C - - Through Hole TO-247
    APT50M38JLL

    APT50M38JLL

    MOSFET N-CH 500V 88A ISOTOP

    Microchip Technology

    		 3,238
    RFQ
    		APT50M38JLL

    Datasheet

         		POWER MOS 7® SOT-227-4, miniBLOC Tube Active N-Channel MOSFET (Metal Oxide) 500 V 88A (Tc) 10V 38mOhm @ 44A, 10V 5V @ 5mA 270 nC @ 10 V ±30V 12000 pF @ 25 V - 694W (Tc) -55°C ~ 150°C (TJ) - - Chassis Mount ISOTOP®
    APT10021JFLL

    APT10021JFLL

    MOSFET N-CH 1000V 37A ISOTOP

    Microchip Technology

    		 6,960
    RFQ
    		APT10021JFLL

    Datasheet

         		POWER MOS 7® SOT-227-4, miniBLOC Tube Active N-Channel MOSFET (Metal Oxide) 1000 V 37A (Tc) 10V 210mOhm @ 18.5A, 10V 5V @ 5mA 395 nC @ 10 V ±30V 9750 pF @ 25 V - 694W (Tc) -55°C ~ 150°C (TJ) - - Chassis Mount ISOTOP®
    APT12040JVR

    APT12040JVR

    MOSFET N-CH 1200V 26A SOT227

    Microchip Technology

    		 3,526
    RFQ
    		APT12040JVR

    Datasheet

         		POWER MOS V® SOT-227-4, miniBLOC Tube Active N-Channel MOSFET (Metal Oxide) 1200 V 26A (Tc) 10V 400mOhm @ 13A, 10V 4V @ 5mA 1200 nC @ 10 V ±30V 18000 pF @ 25 V - 700W (Tc) -55°C ~ 150°C (TJ) - - Chassis Mount SOT-227 (ISOTOP®)
    MSCSM120SKM31CTBL1NG

    MSCSM120SKM31CTBL1NG

    PM-MOSFET-SIC-SBD-BL1

    Microchip Technology

    		 5,734
    RFQ
    		MSCSM120SKM31CTBL1NG

    Datasheet

         		- Module Bulk Active N-Channel SiCFET (Silicon Carbide) 1200 V 79A 20V 31mOhm @ 40A, 20V 2.8V @ 1mA 232 nC @ 20 V +25V, -10V 3020 pF @ 1000 V - 310W -55°C ~ 175°C (TJ) - - Chassis Mount -
    FBG04N30BC

    FBG04N30BC

    GAN FET HEMT 40V30A COTS 4FSMD-B

    EPC Space, LLC

    		 282
    RFQ
    		FBG04N30BC

    Datasheet

         		FSMD-B 4-SMD, No Lead Bulk Active N-Channel GaNFET (Gallium Nitride) 40 V 30A (Tc) 5V 9mOhm @ 30A, 5V 2.5V @ 9mA 11.4 nC @ 5 V +6V, -4V 1300 pF @ 20 V - - -55°C ~ 150°C (TJ) - - Surface Mount 4-SMD
    EPC7003AC

    EPC7003AC

    GAN FET HEMT 100V 5A COTS 4UB

    EPC Space, LLC

    		 276
    RFQ
    		EPC7003AC

    Datasheet

         		- 4-SMD, No Lead Bulk Active N-Channel GaNFET (Gallium Nitride) 100 V 10A (Tc) 10V 42mOhm @ 10A, 5V 2.5V @ 1.4mA 1.5 nC @ 5 V +6V, -4V 168 pF @ 50 V - - -55°C ~ 150°C (TJ) - - Surface Mount 4-SMD
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