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    Home > Products  > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
    IXFH90N65X3

    IXFH90N65X3

    MOSFET 90A 650V X3 TO247

    Littelfuse Inc.

    		 600
    RFQ
    		IXFH90N65X3

    Datasheet

         		HiPerFET™, Ultra X3 TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 90A (Tc) 10V 33mOhm @ 45A, 10V 5.2V @ 4mA 95 nC @ 10 V ±20V 6080 pF @ 25 V - 960W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247 (IXFH)
    IXFH18N100Q3

    IXFH18N100Q3

    MOSFET N-CH 1000V 18A TO247AD

    Littelfuse Inc.

    		 1,382
    RFQ
    		IXFH18N100Q3

    Datasheet

         		HiPerFET™, Q3 Class TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 1000 V 18A (Tc) 10V 660mOhm @ 9A, 10V 6.5V @ 4mA 90 nC @ 10 V ±30V 4890 pF @ 25 V - 830W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247AD (IXFH)
    NVH4L040N120SC1

    NVH4L040N120SC1

    SICFET N-CH 1200V 58A TO247-4

    onsemi

    		 442
    RFQ
    		NVH4L040N120SC1

    Datasheet

         		- TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 58A (Tc) 20V 56mOhm @ 35A, 20V 4.3V @ 10mA 106 nC @ 20 V +25V, -15V 1762 pF @ 800 V - 319W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247-4L
    IXFK150N30X3

    IXFK150N30X3

    MOSFET N-CH 300V 150A TO264

    Littelfuse Inc.

    		 1,150
    RFQ
    		IXFK150N30X3

    Datasheet

         		HiPerFET™, Ultra X3 TO-264-3, TO-264AA Tube Active N-Channel MOSFET (Metal Oxide) 300 V 150A (Tc) 10V 8.3mOhm @ 75A, 10V 4.5V @ 4mA 177 nC @ 10 V ±20V 13100 pF @ 25 V - 890W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-264
    GAN063-650WSAQ

    GAN063-650WSAQ

    GANFET N-CH 650V 34.5A TO247-3

    Nexperia USA Inc.

    		 1,094
    RFQ
    		GAN063-650WSAQ

    Datasheet

         		- TO-247-3 Tube Active N-Channel GaNFET (Cascode Gallium Nitride FET) 650 V 34.5A (Tc) 10V 60mOhm @ 25A, 10V 4.5V @ 1mA 15 nC @ 10 V ±20V 1000 pF @ 400 V - 143W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247-3
    IXFX320N17T2

    IXFX320N17T2

    MOSFET N-CH 170V 320A PLUS247-3

    Littelfuse Inc.

    		 304
    RFQ
    		IXFX320N17T2

    Datasheet

         		HiPerFET™, TrenchT2™ TO-247-3 Variant Tube Active N-Channel MOSFET (Metal Oxide) 170 V 320A (Tc) 10V 5.2mOhm @ 60A, 10V 5V @ 8mA 640 nC @ 10 V ±20V 45000 pF @ 25 V - 1670W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PLUS247™-3
    IXFK44N80P

    IXFK44N80P

    MOSFET N-CH 800V 44A TO264AA

    Littelfuse Inc.

    		 1,032
    RFQ
    		IXFK44N80P

    Datasheet

         		HiPerFET™, Polar TO-264-3, TO-264AA Tube Active N-Channel MOSFET (Metal Oxide) 800 V 44A (Tc) 10V 190mOhm @ 22A, 10V 5V @ 8mA 198 nC @ 10 V ±30V 12000 pF @ 25 V - 1040W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-264AA (IXFK)
    IXTX90P20P

    IXTX90P20P

    MOSFET P-CH 200V 90A PLUS247-3

    Littelfuse Inc.

    		 992
    RFQ
    		IXTX90P20P

    Datasheet

         		PolarP™ TO-247-3 Variant Tube Active P-Channel MOSFET (Metal Oxide) 200 V 90A (Tc) 10V 44mOhm @ 22A, 10V 4V @ 1mA 205 nC @ 10 V ±20V 12000 pF @ 25 V - 890W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PLUS247™-3
    IXFN102N30P

    IXFN102N30P

    MOSFET N-CH 300V 88A SOT227B

    Littelfuse Inc.

    		 570
    RFQ
    		IXFN102N30P

    Datasheet

         		HiPerFET™, Polar SOT-227-4, miniBLOC Tube Active N-Channel MOSFET (Metal Oxide) 300 V 88A (Tc) 10V 33mOhm @ 500mA, 10V 5V @ 4mA 224 nC @ 10 V ±20V 7500 pF @ 25 V - 600W (Tc) -55°C ~ 150°C (TJ) - - Chassis Mount SOT-227B
    APT60N60BCSG

    APT60N60BCSG

    MOSFET N-CH 600V 60A TO247

    Microchip Technology

    		 264
    RFQ
    		APT60N60BCSG

    Datasheet

         		- TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 60A (Tc) 10V 45mOhm @ 44A, 10V 3.9V @ 3mA 190 nC @ 10 V ±30V 7200 pF @ 25 V - 431W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247 [B]
    IXTH7P50

    IXTH7P50

    MOSFET P-CH 500V 7A TO247

    Littelfuse Inc.

    		 408
    RFQ
    		IXTH7P50

    Datasheet

         		- TO-247-3 Tube Active P-Channel MOSFET (Metal Oxide) 500 V 7A (Tc) 10V 1.5Ohm @ 500mA, 10V 5V @ 250µA 130 nC @ 10 V ±20V 3400 pF @ 25 V - 180W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247 (IXTH)
    C3M0045065D

    C3M0045065D

    GEN 3 650V 45 M SIC MOSFET

    Wolfspeed, Inc.

    		 908
    RFQ
    		C3M0045065D

    Datasheet

         		C3M™ TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 650 V 49A (Tc) 15V 60mOhm @ 17.6A, 15V 3.6V @ 4.84mA 63 nC @ 15 V +19V, -8V 1621 pF @ 600 V - 176W (Tc) -40°C ~ 175°C (TJ) - - Through Hole TO-247-3
    C3M0075120K-A

    C3M0075120K-A

    75M 1200V 175C SIC FET

    Wolfspeed, Inc.

    		 598
    RFQ
    		C3M0075120K-A

    Datasheet

         		C3M™ TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 32A (Tc) 15V 90mOhm @ 20A, 15V 3.6V @ 5mA 53 nC @ 15 V +15V, -4V 1390 pF @ 1000 V - 136W (Tc) -40°C ~ 175°C (TJ) - - Through Hole TO-247-4L
    SCT3080KLHRC11

    SCT3080KLHRC11

    SICFET N-CH 1200V 31A TO247N

    Rohm Semiconductor

    		 1,632
    RFQ
    		SCT3080KLHRC11

    Datasheet

         		- TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 31A (Tc) 18V 104mOhm @ 10A, 18V 5.6V @ 5mA 60 nC @ 18 V +22V, -4V 785 pF @ 800 V - 165W 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247N
    SCT4036KEHRC11

    SCT4036KEHRC11

    1200V, 43A, 3-PIN THD, TRENCH-ST

    Rohm Semiconductor

    		 736
    RFQ
    		SCT4036KEHRC11

    Datasheet

         		- TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 43A (Tc) 18V 47mOhm @ 21A, 18V 4.8V @ 11.1mA 91 nC @ 18 V +21V, -4V 2335 pF @ 800 V - 176W 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247N
    NTBG025N065SC1

    NTBG025N065SC1

    SILICON CARBIDE (SIC) MOSFET - 1

    onsemi

    		 4,490
    RFQ
    		NTBG025N065SC1

    Datasheet

         		- TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 650 V 106A (Tc) 15V, 18V 28.5mOhm @ 45A, 18V 4.3V @ 15.5mA 164 nC @ 18 V +22V, -8V 3480 pF @ 325 V - 395W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK-7
    IXFX140N30P

    IXFX140N30P

    MOSFET N-CH 300V 140A PLUS247-3

    Littelfuse Inc.

    		 660
    RFQ
    		IXFX140N30P

    Datasheet

         		HiPerFET™, Polar TO-247-3 Variant Tube Active N-Channel MOSFET (Metal Oxide) 300 V 140A (Tc) 10V 24mOhm @ 70A, 10V 5V @ 8mA 185 nC @ 10 V ±20V 14800 pF @ 25 V - 1040W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PLUS247™-3
    IXFR44N80P

    IXFR44N80P

    MOSFET N-CH 800V 25A ISOPLUS247

    Littelfuse Inc.

    		 480
    RFQ
    		IXFR44N80P

    Datasheet

         		HiPerFET™, Polar TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 800 V 25A (Tc) 10V 200mOhm @ 22A, 10V 5V @ 8mA 200 nC @ 10 V ±30V 12000 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) - - Through Hole ISOPLUS247™
    IPZ65R019C7XKSA1

    IPZ65R019C7XKSA1

    MOSFET N-CH 650V 75A TO247-4

    Infineon Technologies

    		 2,306
    RFQ
    		IPZ65R019C7XKSA1

    Datasheet

         		CoolMOS™ C7 TO-247-4 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 75A (Tc) 10V 19mOhm @ 58.3A, 10V 4V @ 2.92mA 215 nC @ 10 V ±20V 9900 pF @ 400 V - 446W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO247-4
    IXFN44N80P

    IXFN44N80P

    MOSFET N-CH 800V 39A SOT-227B

    Littelfuse Inc.

    		 488
    RFQ
    		IXFN44N80P

    Datasheet

         		HiPerFET™, Polar SOT-227-4, miniBLOC Tube Active N-Channel MOSFET (Metal Oxide) 800 V 39A (Tc) 10V 190mOhm @ 500mA, 10V 5V @ 8mA 200 nC @ 10 V ±30V 12000 pF @ 25 V - 694W (Tc) -55°C ~ 150°C (TJ) - - Chassis Mount SOT-227B
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