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    Home > Products  > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
    AIMCQ120R020M1TXTMA1

    AIMCQ120R020M1TXTMA1

    SIC_DISCRETE

    Infineon Technologies

    		 5,680
    RFQ

    -

    		 CoolSiC™ 22-PowerBSOP Module Tape & Reel (TR) Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 116A (Tc) 18V, 20V 25mOhm @ 43A, 20V 5.1V @ 13.7mA 82 nC @ 20 V +25V, -10V 2667 pF @ 800 V - 577W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PG-HDSOP-22
    IPQC60T010S7AXTMA1

    IPQC60T010S7AXTMA1

    AUTOMOTIVE_COOLMOS

    Infineon Technologies

    		 13,346
    RFQ

    -

    		 CoolMOS™ 22-PowerBSOP Module Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 174A (Tc) 12V 10mOhm @ 50A, 12V 4.5V @ 3.06mA 318 nC @ 12 V ±20V 11986 pF @ 300 V - 694W (Tc) -40°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount PG-HDSOP-22-101
    IPDQ60T010S7AXTMA1

    IPDQ60T010S7AXTMA1

    AUTOMOTIVE_COOLMOS

    Infineon Technologies

    		 13,690
    RFQ

    -

    		 CoolMOS™ 22-PowerBSOP Module Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 174A (Tc) 12V 10mOhm @ 50A, 12V 4.5V @ 3.06mA 318 nC @ 12 V ±20V 11986 pF @ 300 V - 694W (Tc) -40°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount PG-HDSOP-22-1
    SCT020W120G3-4AG

    SCT020W120G3-4AG

    AUTOMOTIVE-GRADE SILICON CARBIDE

    STMicroelectronics

    		 8,410
    RFQ
    		SCT020W120G3-4AG

    Datasheet

         		* - Tube Active - - - - - - - - - - - - - - - - -
    SCT020HU120G3AG

    SCT020HU120G3AG

    AUTOMOTIVE-GRADE SILICON CARBIDE

    STMicroelectronics

    		 12,986
    RFQ
    		SCT020HU120G3AG

    Datasheet

         		* - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
    SCT012H90G3AG

    SCT012H90G3AG

    H2PAK-7

    STMicroelectronics

    		 19,698
    RFQ
    		SCT012H90G3AG

    Datasheet

         		- TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 900 V 110A (Tc) 15V, 18V 15.8mOhm @ 60A, 18V 4.2V @ 10mA 138 nC @ 18 V +18V, -5V 3880 pF @ 600 V - 625W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount H2PAK-7
    SCT016H120G3AG

    SCT016H120G3AG

    AUTOMOTIVE-GRADE SILICON CARBIDE

    STMicroelectronics

    		 7,536
    RFQ
    		SCT016H120G3AG

    Datasheet

         		* - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
    IXFT150N25X3HV

    IXFT150N25X3HV

    MOSFET N-CH 250V 150A TO268HV

    Littelfuse Inc.

    		 6,588
    RFQ
    		IXFT150N25X3HV

    Datasheet

         		HiPerFET™, Ultra X3 TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tube Active N-Channel MOSFET (Metal Oxide) 250 V 150A (Tc) 10V 9mOhm @ 75A, 10V 4.5V @ 4mA 154 nC @ 10 V ±20V 10400 pF @ 25 V - 780W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-268HV (IXFT)
    DMWSH120H28SM3

    DMWSH120H28SM3

    SIC MOSFET BVDSS: >1000V TO247 T

    Diodes Incorporated

    		 6,332
    RFQ

    -

    		 - TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 97.4A (Tc) 15V 28.5mOhm @ 50A, 15V 3.6V @ 17.7mA 175 nC @ 15 V +19V, -8V 3905 pF @ 1000 V - 405W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247
    DMWSH120H28SM4

    DMWSH120H28SM4

    SIC MOSFET BVDSS: >1000V TO247-4

    Diodes Incorporated

    		 7,894
    RFQ

    -

    		 - TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 100A (Tc) 15V 28.5mOhm @ 50A, 15V 3.6V @ 17.7mA 173.7 nC @ 15 V +19V, -8V 3944 pF @ 1000 V - 429W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247-4
    DIW120SIC028

    DIW120SIC028

    SIC MOSFET, TO-247-3L, N, 118A,

    Diotec Semiconductor

    		 16,478
    RFQ
    		DIW120SIC028

    Datasheet

         		- TO-247-3 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 118A (Tc) 20V 28mOhm @ 80A, 20V 4V @ 25mA 373 nC @ 20 V +20V, -5V 5691 pF @ 1000 V - 715W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247
    DIF120SIC022

    DIF120SIC022

    SIC MOSFET, TO-247-4L, N, 120A,

    Diotec Semiconductor

    		 6,708
    RFQ
    		DIF120SIC022

    Datasheet

         		- TO-247-4 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 120A (Tc) 18V 22.3mOhm @ 75A, 18V 4V @ 23.5mA 269 nC @ 18 V +18V, -4V 4817 pF @ 1000 V - 340W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247-4
    DIF120SIC028

    DIF120SIC028

    SIC MOSFET, TO-247-4L, N, 118A,

    Diotec Semiconductor

    		 12,108
    RFQ
    		DIF120SIC028

    Datasheet

         		- TO-247-4 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 118A (Tc) 20V 28mOhm @ 80A, 20V 4V @ 25mA 373 nC @ 20 V +20V, -5V 5691 pF @ 1000 V - 715W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247-4
    DIW065SIC015

    DIW065SIC015

    SIC MOSFET, TO-247-3L, N, 150A,

    Diotec Semiconductor

    		 4,416
    RFQ
    		DIW065SIC015

    Datasheet

         		- TO-247-3 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 650 V 150A (Tc) 18V 15mOhm @ 75A, 18V 4V @ 15mA 236 nC @ 20 V +15V, -4V 7169 pF @ 400 V - 550W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247
    DIF065SIC020

    DIF065SIC020

    SIC MOSFET, TO-247-4L, N, 150A,

    Diotec Semiconductor

    		 13,760
    RFQ
    		DIF065SIC020

    Datasheet

         		- TO-247-4 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 650 V 150A (Tc) 18V 20mOhm @ 75A, 18V 4V @ 22mA 236 nC @ 20 V +18V, -5V 7169 pF @ 400 V - 550W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247-4
    DMWSH120H28SM3Q

    DMWSH120H28SM3Q

    SIC MOSFET BVDSS: >1000V TO247 T

    Diodes Incorporated

    		 19,548
    RFQ

    -

    		 - TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 1200 V 97.4A (Tc) 15V 28.5mOhm @ 50A, 15V 3.6V @ 17.7mA 175 nC @ 15 V +19V, -8V 3905 pF @ 1000 V - 405W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247
    IMBG65R009M1HXTMA1

    IMBG65R009M1HXTMA1

    SILICON CARBIDE MOSFET

    Infineon Technologies

    		 4,464
    RFQ
    		IMBG65R009M1HXTMA1

    Datasheet

         		CoolSiC™ TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiC (Silicon Carbide Junction Transistor) 650 V 170A (Tc) 18V 13.6mOhm @ 97.2A, 18V 5.7V @ 32.4mA 176 nC @ 18 V +23V, -5V 6054 pF @ 400 V - 555W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-7
    IXTN400N20X4

    IXTN400N20X4

    Ultra Junction X4-Class Power

    IXYS

    		 7,676
    RFQ
    		IXTN400N20X4

    Datasheet

         		- SOT-227-4, miniBLOC Tube Active N-Channel MOSFET (Metal Oxide) 200 V 340A (Tc) 10V 3mOhm @ 100A, 10V 4.5V @ 250µA 348 nC @ 10 V ±20V 27700 pF @ 25 V - 830W (Tc) -55°C ~ 175°C (TJ) - - Chassis Mount SOT-227B - miniBLOC
    C3M0032120J1-TR

    C3M0032120J1-TR

    SIC, MOSFET, 32M, 1200V, TO-263-

    Wolfspeed, Inc.

    		 4,986
    RFQ
    		C3M0032120J1-TR

    Datasheet

         		C3M™ TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 1200 V 68A (Tc) 15V 43mOhm @ 41.4A, 15V 3.6V @ 11.5mA 111 nC @ 15 V +15V, -4V 3424 pF @ 1000 V - 277W (Tc) -40°C ~ 150°C (TJ) - - Surface Mount TO-263-7
    IXTN500N20X4

    IXTN500N20X4

    Ultra Junction X4-Class Power

    IXYS

    		 13,904
    RFQ
    		IXTN500N20X4

    Datasheet

         		- SOT-227-4, miniBLOC Tube Active N-Channel MOSFET (Metal Oxide) 200 V 500A (Tc) 10V 1.99mOhm @ 100A, 10V 4.5V @ 250µA 535 nC @ 10 V ±20V 41500 pF @ 25 V - 1150W (Tc) -55°C ~ 175°C (TJ) - - Chassis Mount SOT-227B - miniBLOC
    Total 36322 Record«Prev1... 853854855856857858859860...1817Next»
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