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    Home > Products  > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
    TK110Z65Z,S1F

    TK110Z65Z,S1F

    POWER MOSFET TRANSISTOR TO-247-4

    Toshiba Semiconductor and Storage

    		 2,780
    RFQ
    		TK110Z65Z,S1F

    Datasheet

         		DTMOSVI TO-247-4 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 24A (Ta) 10V 110mOhm @ 12A, 10V 4V @ 1.02mA 40 nC @ 10 V ±30V 2250 pF @ 300 V - 190W (Tc) 150°C - - Through Hole TO-247-4L(T)
    SIHH125N65E-T1-GE3

    SIHH125N65E-T1-GE3

    E SERIES POWER MOSFET 650 V (D-

    Vishay Siliconix

    		 19,012
    RFQ
    		SIHH125N65E-T1-GE3

    Datasheet

         		E 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 25A (Tc) 10V 120mOhm @ 12A, 10V 5V @ 250µA 57 nC @ 10 V ±30V 1938 pF @ 100 V - 174W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® 8 x 8
    PSMN1R1-80ASFJ

    PSMN1R1-80ASFJ

    NEXTPOWER 80 V, 1.11 MOHM, N-CHA

    Nexperia USA Inc.

    		 17,316
    RFQ
    		PSMN1R1-80ASFJ

    Datasheet

         		- 12-BESOP (0.370", 9.40mm Width), Exposed Pad Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 385A (Tc) 7V, 10V 1.11mOhm @ 25A, 10V 4V @ 1mA 363 nC @ 10 V ±20V 24627 pF @ 40 V - 935W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount CCPAK1212
    PSMN1R1-80CSFJ

    PSMN1R1-80CSFJ

    NEXTPOWER 80 V, 1.16 MOHM, N-CHA

    Nexperia USA Inc.

    		 9,544
    RFQ
    		PSMN1R1-80CSFJ

    Datasheet

         		- 12-BESOP (0.370", 9.40mm Width), Exposed Pad Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 400A (Ta) 7V, 10V 1.16mOhm @ 25A, 10V 4V @ 1mA 206 nC @ 10 V ±20V 15363 pF @ 40 V - 1.071kW (Tc) -55°C ~ 175°C (TJ) - - Surface Mount CCPAK1212i
    SIHK125N65E-T1-GE3

    SIHK125N65E-T1-GE3

    E SERIES POWER MOSFET 650 V (D-

    Vishay Siliconix

    		 7,776
    RFQ
    		SIHK125N65E-T1-GE3

    Datasheet

         		E 8-PowerBSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 25A (Tc) 10V 120mOhm @ 12A, 10V 5V @ 250µA 57 nC @ 10 V ±30V 1938 pF @ 100 V - 174W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK®10 x 12
    IXTH450P2

    IXTH450P2

    MOSFET N-CH 500V 16A TO247

    IXYS

    		 6,242
    RFQ
    		IXTH450P2

    Datasheet

         		PolarP2™ TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 500 V 16A (Tc) 10V 330mOhm @ 8A, 10V 4.5V @ 250µA 43 nC @ 10 V ±30V 2530 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247 (IXTH)
    MXP120A250FL-GE3

    MXP120A250FL-GE3

    SILICON CARBIDE MOSFET

    Vishay Siliconix

    		 19,888
    RFQ

    -

    		 - - Tube Active - - - - - - - - - - - - - - - - -
    TK065Z65Z,S1F

    TK065Z65Z,S1F

    POWER MOSFET TRANSISTOR TO-247-4

    Toshiba Semiconductor and Storage

    		 4,932
    RFQ
    		TK065Z65Z,S1F

    Datasheet

         		DTMOSVI TO-247-4 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 38A (Ta) 10V 65mOhm @ 19A, 10V 4V @ 1.69mA 62 nC @ 10 V ±30V 3650 pF @ 300 V - 270W (Tc) 150°C - - Through Hole TO-247-4L(T)
    PJMH105N60FRC_T0_00601

    PJMH105N60FRC_T0_00601

    600V 105mohm 35A SJ MOSFET

    Panjit International Inc.

    		 12,712
    RFQ

    -

    		 - - Tube Active - - - - - - - - - - - - - - - - -
    SIHG70N60EF-GE3

    SIHG70N60EF-GE3

    MOSFET N-CH 600V 70A TO247AC

    Vishay Siliconix

    		 15,896
    RFQ
    		SIHG70N60EF-GE3

    Datasheet

         		- TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 70A (Tc) 10V 38mOhm @ 35A, 10V 4V @ 250µA 380 nC @ 10 V ±30V 7500 pF @ 100 V - 520W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247AC
    IQFH39N04NM6ATMA1

    IQFH39N04NM6ATMA1

    TRENCH <= 40V

    Infineon Technologies

    		 5,348
    RFQ
    		IQFH39N04NM6ATMA1

    Datasheet

         		OptiMOS™ 6 12-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 63A (Ta), 600A (Tc) 6V, 10V 0.39mOhm @ 100A, 10V 2.8V @ 1.05mA 273 nC @ 10 V ±20V 16400 pF @ 20 V - 3W (Ta), 273W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TSON-12-1
    TK35A65W5,S5X

    TK35A65W5,S5X

    MOSFET N-CH 650V 35A TO220SIS

    Toshiba Semiconductor and Storage

    		 8,290
    RFQ
    		TK35A65W5,S5X

    Datasheet

         		DTMOSIV TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 650 V 35A (Tc) 10V 95mOhm @ 17.5A, 10V 4.5V @ 2.1mA 115 nC @ 10 V ±30V 4100 pF @ 300 V - 50W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
    SIHG125N65E-GE3

    SIHG125N65E-GE3

    E SERIES POWER MOSFET 650 V (D-

    Vishay Siliconix

    		 7,052
    RFQ
    		SIHG125N65E-GE3

    Datasheet

         		E TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 27A (Tc) 10V 120mOhm @ 12A, 10V 5V @ 250µA 57 nC @ 10 V ±30V 1938 pF @ 100 V - 208W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247AC
    IGLT65R110D2ATMA1

    IGLT65R110D2ATMA1

    IGLT65R110D2ATMA1

    Infineon Technologies

    		 15,216
    RFQ
    		IGLT65R110D2ATMA1

    Datasheet

         		CoolGaN™ 16-PowerSOP Module Tape & Reel (TR) Active N-Channel GaNFET (Gallium Nitride) 650 V 15A (Tc) - - 1.6V @ 1.3mA 2.4 nC @ 3 V -10V 170 pF @ 400 V - 55W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-HDSOP-16-8
    IPP022N12NM6AKSA1

    IPP022N12NM6AKSA1

    TRENCH >=100V

    Infineon Technologies

    		 18,928
    RFQ
    		IPP022N12NM6AKSA1

    Datasheet

         		OptiMOS™ 6 TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 120 V 29A (Ta), 203A (Tc) 8V, 10V 2.2mOhm @ 100A, 10V 3.6V @ 275µA 141 nC @ 10 V ±20V 11000 pF @ 60 V - 3.8W (Ta), 395W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3-1
    SIHK100N65E-T1-GE3

    SIHK100N65E-T1-GE3

    E SERIES POWER MOSFET 650 V (D-

    Vishay Siliconix

    		 12,996
    RFQ
    		SIHK100N65E-T1-GE3

    Datasheet

         		E 8-PowerBSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 28A (Tc) 10V 100mOhm @ 12A, 10V 5V @ 250µA 62 nC @ 10 V ±30V 2137 pF @ 100 V - 184W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK®10 x 12
    CCSPG1560N TR PBFREE

    CCSPG1560N TR PBFREE

    SURFACE MOUNT MOSFET

    Central Semiconductor Corp

    		 4,190
    RFQ

    -

    		 - 25-PowerVFQFN Tape & Reel (TR) Active N-Channel GaNFET (Gallium Nitride) 150 V 60A (Tj) 5V 7mOhm @ 20A, 5V 2.1V @ 7mA 13 nC @ 5 V +6V, -4V 1450 pF @ 75 V - 200mW (Ta) -40°C ~ 150°C (TJ) - - Surface Mount 25-CSP (4x6)
    G3F320MT12J-TR

    G3F320MT12J-TR

    1200V 320M TO-263-7 G3F SIC MOSF

    GeneSiC Semiconductor

    		 9,964
    RFQ

    -

    		 - - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
    TK31A60W,S4VX

    TK31A60W,S4VX

    MOSFET N-CH 600V 30.8A TO220SIS

    Toshiba Semiconductor and Storage

    		 4,302
    RFQ
    		TK31A60W,S4VX

    Datasheet

         		DTMOSIV TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 30.8A (Ta) 10V 88mOhm @ 15.4A, 10V 3.7V @ 1.5mA 86 nC @ 10 V ±30V 3000 pF @ 300 V - 45W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
    SIHP100N65E-GE3

    SIHP100N65E-GE3

    E SERIES POWER MOSFET 650 V (D-

    Vishay Siliconix

    		 17,254
    RFQ
    		SIHP100N65E-GE3

    Datasheet

         		E TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 30A (Tc) 10V 100mOhm @ 12A, 10V 5V @ 250µA 62 nC @ 10 V ±30V 2137 pF @ 100 V - 208W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
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