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    Home > Products  > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
    BUK9516-75B,127

    BUK9516-75B,127

    MOSFET N-CH 75V 67A TO220AB

    NXP USA Inc.

    		 7,102
    RFQ
    		BUK9516-75B,127

    Datasheet

         		TrenchMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 75 V 67A (Tc) 4.5V, 10V 14mOhm @ 25A, 10V 2V @ 1mA 35 nC @ 5 V ±15V 4034 pF @ 25 V - 157W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
    FQPF6N40CT

    FQPF6N40CT

    MOSFET N-CH 400V 6A TO220F

    Fairchild Semiconductor

    		 1,360
    RFQ
    		FQPF6N40CT

    Datasheet

         		QFET® TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 400 V 6A (Tc) 10V 1Ohm @ 3A, 10V 4V @ 250µA 20 nC @ 10 V ±30V 625 pF @ 25 V - 38W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220F-3
    FQB7P06TM

    FQB7P06TM

    MOSFET P-CH 60V 7A D2PAK

    Fairchild Semiconductor

    		 1,098
    RFQ
    		FQB7P06TM

    Datasheet

         		QFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Obsolete P-Channel MOSFET (Metal Oxide) 60 V 7A (Tc) 10V 410mOhm @ 3.5A, 10V 4V @ 250µA 8.2 nC @ 10 V ±25V 295 pF @ 25 V - 3.75W (Ta), 45W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263 (D2PAK)
    FDS4488

    FDS4488

    MOSFET N-CH 30V 7.9A 8SOIC

    onsemi

    		 512
    RFQ
    		FDS4488

    Datasheet

         		* - Cut Tape (CT) Active - - - - - - - - - - - - - - - - -
    IRFR220

    IRFR220

    MOSFET N-CH 200V 4.6A TO252AA

    Harris Corporation

    		 1,056
    RFQ
    		IRFR220

    Datasheet

         		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active N-Channel MOSFET (Metal Oxide) 200 V 4.6A (Tc) - 800mOhm @ 2.4A, 10V 4V @ 250µA 18 nC @ 10 V ±20V 330 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252AA
    FQD6N50CTF

    FQD6N50CTF

    MOSFET N-CH 500V 4.5A DPAK

    Fairchild Semiconductor

    		 1,500
    RFQ
    		FQD6N50CTF

    Datasheet

         		QFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 500 V 4.5A (Tc) 10V 1.2Ohm @ 2.25A, 10V 4V @ 250µA 25 nC @ 10 V ±30V 700 pF @ 25 V - 2.5W (Ta), 61W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252 (DPAK)
    2SK3707-1EX

    2SK3707-1EX

    NCH 4V DRIVE SERIES

    onsemi

    		 1,400
    RFQ
    		2SK3707-1EX

    Datasheet

         		* - Bulk Active - - - - - - - - - - - - - - - - -
    BUZ76

    BUZ76

    N-CHANNEL POWER MOSFET

    Harris Corporation

    		 1,400
    RFQ
    		BUZ76

    Datasheet

         		- TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 400 V 3A (Tc) 10V 1.8Ohm @ 2A, 10V 4V @ 1mA - ±20V 650 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
    IPP139N08N3GXKSA1

    IPP139N08N3GXKSA1

    N-CHANNEL POWER MOSFET

    Infineon Technologies

    		 1,264
    RFQ
    		IPP139N08N3GXKSA1

    Datasheet

         		OptiMOS™ 3 TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 80 V 45A (Tc) 6V, 10V 13.9mOhm @ 45A, 10V 3.5V @ 33µA 25 nC @ 10 V ±20V 1730 pF @ 40 V - 79W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3
    FQPF19N10

    FQPF19N10

    MOSFET N-CH 100V 13.6A TO220F

    Fairchild Semiconductor

    		 1,164
    RFQ
    		FQPF19N10

    Datasheet

         		QFET® TO-220-3 Full Pack Bulk Active N-Channel MOSFET (Metal Oxide) 100 V 13.6A (Tc) 10V 100mOhm @ 6.8A, 10V 4V @ 250µA 25 nC @ 10 V ±25V 780 pF @ 25 V - 38W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220F-3
    IPP80N04S306AKSA1

    IPP80N04S306AKSA1

    MOSFET N-CH 40V 80A TO220-3

    Infineon Technologies

    		 5,858
    RFQ
    		IPP80N04S306AKSA1

    Datasheet

         		OptiMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 10V 5.7mOhm @ 80A, 10V 4V @ 52µA 47 nC @ 10 V ±20V 3250 pF @ 25 V - 100W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3-1
    IRF730R4587

    IRF730R4587

    5.5A 400V 1.000 OHM N-CHANNEL

    Harris Corporation

    		 2,000
    RFQ
    		IRF730R4587

    Datasheet

         		* - Bulk Active - - - - - - - - - - - - - - - - -
    BUK7611-55B,118

    BUK7611-55B,118

    MOSFET N-CH 55V 75A D2PAK

    NXP USA Inc.

    		 1,440
    RFQ

    -

    		 * - Bulk Active - - - - - - - - - - - - - - - - -
    PSMN8R5-100ESQ

    PSMN8R5-100ESQ

    POWER FIELD-EFFECT TRANSISTOR, 1

    NXP USA Inc.

    		 1,352
    RFQ
    		PSMN8R5-100ESQ

    Datasheet

         		- TO-262-3 Long Leads, I2PAK, TO-262AA Bulk Active N-Channel MOSFET (Metal Oxide) 100 V 100A (Tj) 10V 8.5mOhm @ 25A, 10V 4V @ 1mA 111 nC @ 10 V ±20V 5512 pF @ 50 V - 263W (Tc) -55°C ~ 175°C (TJ) - - Through Hole I2PAK
    IPP47N10SL26AKSA1

    IPP47N10SL26AKSA1

    MOSFET N-CH 100V 47A TO220-3

    Infineon Technologies

    		 19,986
    RFQ
    		IPP47N10SL26AKSA1

    Datasheet

         		SIPMOS® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 100 V 47A (Tc) 4.5V, 10V 26mOhm @ 33A, 10V 2V @ 2mA 135 nC @ 10 V ±20V 2500 pF @ 25 V - 175W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3-1
    FDP6030BL

    FDP6030BL

    POWER FIELD-EFFECT TRANSISTOR, 4

    Fairchild Semiconductor

    		 1,600
    RFQ
    		FDP6030BL

    Datasheet

         		PowerTrench® TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 30 V 40A (Tc) 4.5V, 10V 18mOhm @ 20A, 10V 3V @ 250µA 17 nC @ 5 V ±20V 1160 pF @ 15 V - 60W (Tc) -65°C ~ 175°C (TJ) - - Through Hole TO-220-3
    G700P06D3

    G700P06D3

    P-60V,-18A,RD(MAX)<70M@-10V,VTH-

    Goford Semiconductor

    		 1,540
    RFQ
    		G700P06D3

    Datasheet

         		G 8-PowerVDFN Cut Tape (CT) Active P-Channel MOSFET (Metal Oxide) 60 V 18A (Tc) 4.5V, 10V 70mOhm @ 4A, 10V 2.5V @ 250µA 25 nC @ 10 V ±20V 1446 pF @ 30 V - 32W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-DFN (3.15x3.05)
    DMP2540UCB9-7

    DMP2540UCB9-7

    MOSFET P-CH 25V 4A U-WLB1515-9

    Diodes Incorporated

    		 268
    RFQ
    		DMP2540UCB9-7

    Datasheet

         		- 9-UFBGA, WLBGA Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 25 V 4A (Ta) 1.8V, 4.5V 40mOhm @ 2A, 4.5V 1.1V @ 250µA 6 nC @ 4.5 V -6V 450 pF @ 10 V - 1W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount U-WLB1515-9
    RF1S15N08L

    RF1S15N08L

    LOGIC LEVEL GATE (5V) DEVICE

    Harris Corporation

    		 1,600
    RFQ
    		RF1S15N08L

    Datasheet

         		- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active N-Channel MOSFET (Metal Oxide) 80 V 45A - - - - - - - - - - - Surface Mount TO-263AB
    IRFR9110

    IRFR9110

    MOSFET P-CH 100V 3.1A DPAK

    Harris Corporation

    		 1,108
    RFQ
    		IRFR9110

    Datasheet

         		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active P-Channel MOSFET (Metal Oxide) 100 V 3.1A (Tc) - 1.2Ohm @ 1.9A, 10V 4V @ 250µA 8.7 nC @ 10 V ±20V 200 pF @ 25 V - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252AA (DPAK)
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