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    Home > Products  > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
    FCPF2250N80Z

    FCPF2250N80Z

    MOSFET N-CH 800V 2.6A TO220F

    Fairchild Semiconductor

    		 720
    RFQ
    		FCPF2250N80Z

    Datasheet

         		SuperFET® II TO-220-3 Full Pack Bulk Active N-Channel MOSFET (Metal Oxide) 800 V 2.6A (Tc) 10V 2.25Ohm @ 1.3A, 10V 4.5V @ 260µA 14 nC @ 10 V ±20V 585 pF @ 100 V - 21.9W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220F-3
    BUK7C10-75AITE,118

    BUK7C10-75AITE,118

    NEXPERIA BUK7C10-75 - 75A, 75V,

    NXP Semiconductors

    		 2,138
    RFQ
    		BUK7C10-75AITE,118

    Datasheet

         		TrenchMOS™ TO-263-7, D2PAK (6 Leads + Tab) Bulk Active N-Channel MOSFET (Metal Oxide) 75 V 75A (Tc) 10V 10mOhm @ 50A, 10V 4V @ 1mA 121 nC @ 10 V ±20V 4700 pF @ 25 V Current Sensing 272W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount D2PAK-7
    UPA1727G-E1-AT

    UPA1727G-E1-AT

    UPA1727G-E1-AT - MOS FIELD EFFEC

    Renesas

    		 10,000
    RFQ
    		UPA1727G-E1-AT

    Datasheet

         		- 8-SOIC (0.173", 4.40mm Width) Bulk Obsolete N-Channel MOSFET (Metal Oxide) 60 V 10A (Ta) 4V, 10V 19mOhm @ 5A, 10V 2.5V @ 1mA 45 nC @ 10 V ±20V 2400 pF @ 10 V - 2W (Ta) 150°C - - Surface Mount 8-SOP
    AM40N20-180P

    AM40N20-180P

    MOSFET N-CH 200V 34A TO-220

    Analog Power Inc.

    		 7,000
    RFQ

    -

    		 - TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 200 V 34A (Ta) 5.5V, 10V 180mOhm @ 10A, 10V 1V @ 250µA 7 nC @ 4.5 V ±20V 948 pF @ 15 V - 300W (Ta) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
    GT023N10Q

    GT023N10Q

    MOSFET N-CH 100V 226A 250W TO-2

    Goford Semiconductor

    		 2,400
    RFQ
    		GT023N10Q

    Datasheet

         		- TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 100 V 226A (Tc) 10V 2.7mOhm @ 80A, 10V 4V @ 250µA 121 nC @ 10 V ±20V 8488 pF @ 50 V - 250W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247
    IRF341

    IRF341

    IRF341 - 10A, 350V, N-CHANNEL, P

    International Rectifier

    		 5,290
    RFQ
    		IRF341

    Datasheet

         		* - Bulk Active - - - - - - - - - - - - - - - - -
    FQPF11N50CF

    FQPF11N50CF

    POWER FIELD-EFFECT TRANSISTOR, 1

    Fairchild Semiconductor

    		 2,000
    RFQ
    		FQPF11N50CF

    Datasheet

         		FRFET® TO-220-3 Full Pack Bulk Active N-Channel MOSFET (Metal Oxide) 500 V 11A (Tc) 10V 550mOhm @ 5.5A, 10V 4V @ 250µA 55 nC @ 10 V ±30V 2055 pF @ 25 V - 48W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220F-3
    PSMN009-100P,127

    PSMN009-100P,127

    NEXPERIA PSMN009-100P - 75A, 100

    NXP Semiconductors

    		 582
    RFQ
    		PSMN009-100P,127

    Datasheet

         		TrenchMOS™ TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 100 V 75A (Tc) 10V 8.8mOhm @ 25A, 10V 4V @ 1mA 156 nC @ 10 V ±20V 8250 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
    FDMS8320LDC

    FDMS8320LDC

    N-CHANNEL DUAL COOLTM 56 POWER T

    Fairchild Semiconductor

    		 82,836
    RFQ
    		FDMS8320LDC

    Datasheet

         		* - Bulk Active - - - - - - - - - - - - - - - - -
    FDA16N50LDTU

    FDA16N50LDTU

    POWER FIELD-EFFECT TRANSISTOR, N

    Fairchild Semiconductor

    		 57,040
    RFQ
    		FDA16N50LDTU

    Datasheet

         		- TO-3P-3, SC-65-3, Formed Leads Bulk Active N-Channel MOSFET (Metal Oxide) 500 V 16.5A (Tc) 10V 380mOhm @ 8.3A, 10V 5V @ 250µA 45 nC @ 10 V ±30V 1945 pF @ 25 V - 205W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-3PN (L-Forming)
    PSMN2R6-60PSQ

    PSMN2R6-60PSQ

    NOW NEXPERIA PSMN2R6-60PSQ - 150

    NXP USA Inc.

    		 532
    RFQ
    		PSMN2R6-60PSQ

    Datasheet

         		- TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 60 V 150A (Tc) 10V 2.6mOhm @ 25A, 10V 4V @ 1mA 140 nC @ 10 V ±20V 7629 pF @ 25 V - 326W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
    UPA2792GR(0)-E1-AZ

    UPA2792GR(0)-E1-AZ

    SWITCHING N AND P TRANSISTORS

    Renesas Electronics Corporation

    		 20,000
    RFQ
    		UPA2792GR(0)-E1-AZ

    Datasheet

         		- - Bulk Not For New Designs - - - 10A (Tj) - - - - - - - - - - - - -
    AM20N10-52PF

    AM20N10-52PF

    MOSFET N-CH 100V 20A TO-220CFM

    Analog Power Inc.

    		 5,000
    RFQ
    		AM20N10-52PF

    Datasheet

         		- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 100 V 20A (Tc) 6V, 10V 52mOhm @ 10A, 10V 1V @ 250µA 18 nC @ 6 V ±20V 1184 pF @ 50 V - 60W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220CFM
    AM320N06-02P

    AM320N06-02P

    MOSFET N-CH 60V 230A TO-220

    Analog Power Inc.

    		 1,600
    RFQ
    		AM320N06-02P

    Datasheet

         		- TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 60 V 230A (Tc) 4.5V, 10V 2.9mOhm @ 230A, 10V 1V @ 250µA 112 nC @ 4.5 V ±20V 13147 pF @ 15 V - 300W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
    FQI27N25TU

    FQI27N25TU

    MOSFET N-CH 250V 25.5A I2PAK

    Fairchild Semiconductor

    		 1,200
    RFQ
    		FQI27N25TU

    Datasheet

         		QFET® TO-262-3 Long Leads, I2PAK, TO-262AA Bulk Active N-Channel MOSFET (Metal Oxide) 250 V 25.5A (Tc) 10V 110mOhm @ 12.75A, 10V 5V @ 250µA 65 nC @ 10 V ±30V 2450 pF @ 25 V - 3.13W (Ta), 180W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-262 (I2PAK)
    FDP39N20

    FDP39N20

    POWER FIELD-EFFECT TRANSISTOR, 3

    Fairchild Semiconductor

    		 1,000
    RFQ
    		FDP39N20

    Datasheet

         		UniFET™ TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 200 V 39A (Tc) 10V 66mOhm @ 19.5A, 10V 5V @ 250µA 49 nC @ 10 V ±30V 2130 pF @ 25 V - 251W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220-3
    GT016N10TL

    GT016N10TL

    MOSFET N-CH 100V 362A TOLL-8

    Goford Semiconductor

    		 4,000
    RFQ
    		GT016N10TL

    Datasheet

         		- 8-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 362A (Tc) 10V 1.6mOhm @ 15A, 10V 4.5V @ 250µA 165 nC @ 10 V ±20V 10037 pF @ 50 V - 450W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TOLL
    UPA1760G-E1-AT

    UPA1760G-E1-AT

    MOSFET 2N-CH 30V 8A 8SOP

    Renesas

    		 160,000
    RFQ
    		UPA1760G-E1-AT

    Datasheet

         		- 8-SOIC (0.173", 4.40mm Width) Bulk Obsolete - MOSFET (Metal Oxide) - 8A (Ta) - 26mOhm @ 4A, 10V 2.5V @ 1mA - - - - - 150°C - - Surface Mount 8-SOP
    FDP8441

    FDP8441

    POWER FIELD-EFFECT TRANSISTOR, 2

    Fairchild Semiconductor

    		 28,814
    RFQ
    		FDP8441

    Datasheet

         		PowerTrench® TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 40 V 23A (Ta), 80A (Tc) 10V 2.7mOhm @ 80A, 10V 4V @ 250µA 280 nC @ 10 V ±20V 15000 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220-3
    AM7411P

    AM7411P

    MOSFET P-CH -100V 33A DFN5X6

    Analog Power Inc.

    		 4,400
    RFQ
    		AM7411P

    Datasheet

         		- 8-PowerVDFN Bulk Active P-Channel MOSFET (Metal Oxide) -100 V 6A (Ta), 33A (Tc) 4.5V, 10V 95mOhm @ 3A, 10V 1V @ 250µA 30 nC @ 4.5 V ±20V 3665 pF @ 15 V - 5W (Ta), 156W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-DFN (5.2x5.55)
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