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FETs, MOSFETs

Mfr. Part #	Availability	Price	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
IXFT16N120P MOSFET N-CH 1200V 16A TO268 Littelfuse Inc.	698	-	RFQ	Datasheet	HiPerFET™, Polar	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	1200 V	16A (Tc)	10V	950mOhm @ 500mA, 10V	6.5V @ 1mA	120 nC @ 10 V	±30V	6900 pF @ 25 V	-	660W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-268AA
HF9969-91 AUTOMOTIVE POWER MOSFET Renesas Electronics Corporation	4,800	-	RFQ	-	*	-	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IXFK110N07 MOSFET N-CH 70V 110A TO264AA IXYS	2,450	-	RFQ	Datasheet	HiPerFET™	TO-264-3, TO-264AA	Tube	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	70 V	110A (Tc)	10V	6mOhm @ 55A, 10V	4V @ 8mA	480 nC @ 10 V	±20V	9000 pF @ 25 V	-	500W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-264AA (IXFK)
IGO60R070D1AUMA1 GANFET N-CH 600V 31A 20DSO Infineon Technologies	14,952	-	RFQ	Datasheet	CoolGaN™	20-PowerSOIC (0.433", 11.00mm Width)	Tape & Reel (TR)	Obsolete	N-Channel	GaNFET (Gallium Nitride)	600 V	31A (Tc)	-	-	1.6V @ 2.6mA	-	-10V	380 pF @ 400 V	-	125W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-DSO-20-85
2SK1971-E N-CHANNEL POWER MOSFET Renesas Electronics Corporation	2,662	-	RFQ	Datasheet	*	-	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
2SK1947-E N-CHANNEL POWER MOSFET Renesas Electronics Corporation	892	-	RFQ	Datasheet	*	-	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SCTWA30N120 IC POWER MOSFET 1200V HIP247 STMicroelectronics	588	-	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	45A (Tc)	20V	100mOhm @ 20A, 20V	3.5V @ 1mA (Typ)	105 nC @ 20 V	+25V, -10V	1700 pF @ 400 V	-	270W (Tc)	-55°C ~ 200°C (TJ)	-	-	Through Hole	HiP247™ Long Leads
AS1M025120P N-CHANNEL SILICON CARBIDE POWER ANBON SEMICONDUCTOR (INT'L) LIMITED	248	-	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	90A (Tc)	20V	34mOhm @ 50A, 20V	4V @ 15mA	195 nC @ 20 V	+25V, -10V	3600 pF @ 1000 V	-	463W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247-3
IXFX27N80Q MOSFET N-CH 800V 27A PLUS247-3 Littelfuse Inc.	590	-	RFQ	Datasheet	HiPerFET™, Q Class	TO-247-3 Variant	Tube	Active	N-Channel	MOSFET (Metal Oxide)	800 V	27A (Tc)	10V	320mOhm @ 500mA, 10V	4.5V @ 4mA	170 nC @ 10 V	±20V	7600 pF @ 25 V	-	500W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PLUS247™-3
AMC2M0080120D SICFET N-CH 1200V 36A TO247 Analog Power Inc.	2,398	-	RFQ	Datasheet	WBG	TO-247-3	Bulk	Active	N-Channel	SiCFET (Silicon Carbide)	1.2 kV	36A (Tc)	10V	80mOhm @ 5A, 10V	2V @ 250µA	71 nC @ 50 V	±25V	1461 pF @ 6.5 V	-	200W (Tc)	-55°C ~ 155°C (TJ)	-	-	Through Hole	TO-247
2SK1526-E N-CHANNEL POWER MOSFET Renesas Electronics Corporation	1,056	-	RFQ	Datasheet	-	TO-3P-3, SC-65-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	450 V	40A	10V	150mOhm @ 20A, 10V	3V @ 1mA	-	±30V	5800 pF @ 10 V	-	-	150°C	-	-	Through Hole	TO-3PL
IXTX240N075L2 MOSFET N-CH 75V 240A PLUS247-3 Littelfuse Inc.	534	-	RFQ	Datasheet	Linear L2™	TO-247-3 Variant	Tube	Active	N-Channel	MOSFET (Metal Oxide)	75 V	240A (Tc)	10V	7mOhm @ 120A, 10V	4.5V @ 3mA	546 nC @ 10 V	±20V	19000 pF @ 25 V	-	960W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PLUS247™-3
IXTK90N25L2 MOSFET N-CH 250V 90A TO264 Littelfuse Inc.	1,546	-	RFQ	Datasheet	Linear L2™	TO-264-3, TO-264AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	250 V	90A (Tc)	10V	33mOhm @ 45A, 10V	4.5V @ 3mA	640 nC @ 10 V	±20V	23000 pF @ 25 V	-	960W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-264 (IXTK)
SCT3040KRC14 SICFET N-CH 1200V 55A TO247-4L Rohm Semiconductor	1,612	-	RFQ	Datasheet	-	TO-247-4	Tube	Last Time Buy	N-Channel	SiCFET (Silicon Carbide)	1200 V	55A (Tc)	18V	52mOhm @ 20A, 18V	5.6V @ 10mA	107 nC @ 18 V	+22V, -4V	1337 pF @ 800 V	-	262W	175°C (TJ)	-	-	Through Hole	TO-247-4L
SCT3030ARC14 SICFET N-CH 650V 70A TO247-4L Rohm Semiconductor	306	-	RFQ	Datasheet	-	TO-247-4	Tube	Last Time Buy	N-Channel	SiCFET (Silicon Carbide)	650 V	70A (Tc)	18V	39mOhm @ 27A, 18V	5.6V @ 13.3mA	104 nC @ 18 V	+22V, -4V	1526 pF @ 500 V	-	262W	175°C (TJ)	-	-	Through Hole	TO-247-4L
FS70UM-06#B00 70A, 60V, N-CHANNEL MOSFET Renesas Electronics Corporation	6,960	-	RFQ	-	*	-	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
MMIX1F160N30T MOSFET N-CH 300V 102A 24SMPD IXYS	920	-	RFQ	Datasheet	GigaMOS™, HiPerFET™, TrenchT2™	24-PowerSMD, 21 Leads	Tube	Active	N-Channel	MOSFET (Metal Oxide)	300 V	102A (Tc)	10V	20mOhm @ 60A, 10V	5V @ 8mA	335 nC @ 10 V	±20V	2800 pF @ 25 V	-	570W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	24-SMPD
2SK1519-E N-CHANNEL POWER MOSFET Renesas Electronics Corporation	864	-	RFQ	Datasheet	*	-	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
APT60M75L2LLG MOSFET N-CH 600V 73A 264 MAX Microchip Technology	420	-	RFQ	Datasheet	POWER MOS 7®	TO-264-3, TO-264AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	73A (Tc)	10V	75mOhm @ 36.5A, 10V	5V @ 5mA	195 nC @ 10 V	±30V	8930 pF @ 25 V	-	893W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	264 MAX™ [L2]
FF06010FA SICFET N-CH 650V 140A TOLL fastSiC	580	-	RFQ	Datasheet	Falcon	8-PowerSFN	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	140A (Tc)	18V	18mOhm @ 60A, 18V	2.5V @ 100mA	315 nC @ 15 V	18V	7390 pF @ 400 V	-	375W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TOLL

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