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FETs, MOSFETs

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
FDP8440

FDP8440

POWER FIELD-EFFECT TRANSISTOR, 1

Fairchild Semiconductor

34,618
RFQ
FDP8440

Datasheet

PowerTrench® TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 4.5V, 10V 2.2mOhm @ 80A, 10V 3V @ 250µA 450 nC @ 10 V ±20V 24740 pF @ 25 V - 306W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220-3
FDP8440

FDP8440

MOSFET N-CH 40V 100A TO-220

onsemi

12,442
RFQ
FDP8440

Datasheet

PowerTrench® TO-220-3 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 4.5V, 10V 2.2mOhm @ 80A, 10V 3V @ 250µA 450 nC @ 10 V ±20V 24740 pF @ 25 V - 306W (Tc) -55°C ~ 155°C (TJ) - - Through Hole TO-220-3
HUF75945G3

HUF75945G3

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

6,000
RFQ
HUF75945G3

Datasheet

- TO-247-3 Bulk Active N-Channel MOSFET (Metal Oxide) 200 V 38A (Tc) 10V 71mOhm @ 38A, 10V 4V @ 250µA 280 nC @ 20 V ±20V 4023 pF @ 25 V - 310W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247AD
HUF75939S3ST

HUF75939S3ST

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

1,600
RFQ
HUF75939S3ST

Datasheet

UltraFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active N-Channel MOSFET (Metal Oxide) 200 V 22A (Tc) 10V 125mOhm @ 22A, 10V 4V @ 250µA 152 nC @ 20 V ±20V 2200 pF @ 25 V - 180W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263 (D2PAK)
GT011N03ME

GT011N03ME

MOSFET N-CH ESD 30V A TO-263

Goford Semiconductor

1,578
RFQ
GT011N03ME

Datasheet

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 30 V 209A (Tc) 4.5V, 10V 1.6mOhm @ 10A, 10V 2.5V @ 250µA 98 nC @ 10 V ±18V 6140 pF @ 15 V - 89W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263
STD6N52K3

STD6N52K3

MOSFET N-CH 525V 5A DPAK

STMicroelectronics

5,426
RFQ
STD6N52K3

Datasheet

SuperMESH3™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 525 V 5A (Tc) 10V 1.2Ohm @ 2.5A, 10V 4.5V @ 100µA - ±30V - - 70W (Tc) 150°C (TJ) - - Surface Mount DPAK
HAT1125HWS-E

HAT1125HWS-E

P-CHANNEL POWER MOSFET

Renesas Electronics Corporation

4,040
RFQ
HAT1125HWS-E

Datasheet

* - Bulk Active - - - - - - - - - - - - - - - - -
SQM40081EL_GE3

SQM40081EL_GE3

MOSFET P-CH 40V 50A TO263

Vishay Siliconix

3,400
RFQ
SQM40081EL_GE3

Datasheet

TrenchFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 40 V 50A (Tc) 4.5V, 10V 8.5mOhm @ 25A, 10V 2.5V @ 250µA 230 nC @ 10 V ±20V 9950 pF @ 25 V - 107W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263 (D2PAK)
FQP44N10

FQP44N10

MOSFET N-CH 100V 43.5A TO220-3

onsemi

1,036
RFQ
FQP44N10

Datasheet

QFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 100 V 43.5A (Tc) 10V 39mOhm @ 21.75A, 10V 4V @ 250µA 62 nC @ 10 V ±25V 1800 pF @ 25 V - 146W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220-3
2SK551

2SK551

N-CHANNEL POWER MOSFET

Renesas Electronics Corporation

998
RFQ
2SK551

Datasheet

* - Bulk Active - - - - - - - - - - - - - - - - -
SIHD11N80AE-T4-GE3

SIHD11N80AE-T4-GE3

N-CHANNEL 800V

Vishay Siliconix

6,000
RFQ
SIHD11N80AE-T4-GE3

Datasheet

E TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 800 V 8A (Tc) 10V 450mOhm @ 5.5A, 10V 4V @ 250µA 42 nC @ 10 V ±30V 804 pF @ 100 V - 78W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount DPAK
STD130N4F6AG

STD130N4F6AG

MOSFET N-CH 40V 80A DPAK

STMicroelectronics

4,990
RFQ
STD130N4F6AG

Datasheet

STripFET™ F6 TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 10V 3.6mOhm @ 40A, 10V 4V @ 250µA 70 nC @ 10 V ±20V 4260 pF @ 25 V - 143W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount DPAK
SIHD11N80AE-T1-GE3

SIHD11N80AE-T1-GE3

N-CHANNEL 800V

Vishay Siliconix

4,000
RFQ
SIHD11N80AE-T1-GE3

Datasheet

E TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 800 V 8A (Tc) 10V 450mOhm @ 5.5A, 10V 4V @ 250µA 42 nC @ 10 V ±30V 804 pF @ 100 V - 78W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount DPAK
PSMN017-80PS,127

PSMN017-80PS,127

MOSFET N-CH 80V 50A TO220AB

Nexperia USA Inc.

2,348
RFQ
PSMN017-80PS,127

Datasheet

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 80 V 50A (Tc) 10V 17mOhm @ 10A, 10V 4V @ 1mA 26 nC @ 10 V ±20V 1573 pF @ 40 V - 103W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
IRFI830GPBF

IRFI830GPBF

MOSFET N-CH 500V 3.1A TO220-3

Vishay Siliconix

1,562
RFQ
IRFI830GPBF

Datasheet

- TO-220-3 Full Pack, Isolated Tab Tube Obsolete N-Channel MOSFET (Metal Oxide) 500 V 3.1A (Tc) 10V 1.5Ohm @ 1.9A, 10V 4V @ 250µA 38 nC @ 10 V ±20V 610 pF @ 25 V - 35W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220-3
GC11N65M

GC11N65M

N650V,RD(MAX)<360M@10V,VTH2.5V~4

Goford Semiconductor

1,550
RFQ
GC11N65M

Datasheet

SuperJunction TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 650 V 11A (Tc) 10V 360mOhm @ 5.5A, 10V 4V @ 250µA 21 nC @ 10 V ±30V 768 pF @ 50 V - 78W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263
IRL620PBF

IRL620PBF

MOSFET N-CH 200V 5.2A TO220AB

Vishay Siliconix

280
RFQ
IRL620PBF

Datasheet

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 100 V 5.2A (Tc) 4V, 5V 800mOhm @ 3.1A, 5V 2V @ 250µA 16 nC @ 5 V ±10V 360 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
GSFH9R015

GSFH9R015

MOSFET, N-CH, SINGLE, 100.00A, 1

Good-Ark Semiconductor

1,954
RFQ
GSFH9R015

Datasheet

- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 150 V 100A (Tj) 10V 9mOhm @ 20A, 10V 3.9V @ 250µA 100 nC @ 10 V ±20V 5870 pF @ 75 V - 178W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220-3
GSFH10120

GSFH10120

MOSFET, N-CH, SINGLE, 180.00A, 1

Good-Ark Semiconductor

1,858
RFQ
GSFH10120

Datasheet

- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 100 V 180A (Tc) 10V 4.4mOhm @ 50A, 10V 3.9V @ 250µA 152 nC @ 10 V ±20V 8402 pF @ 50 V - 208W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220-3
FF06320B

FF06320B

SICFET N-CH 650V 8.6A PQFN5x6

fastSiC

580
RFQ
FF06320B

Datasheet

Falcon 9-PowerTDFN Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 650 V 8.6A (Tc) 15V, 18V 420mOhm @ 2A, 18V 1.6V @ 4mA (Typ) 14.5 nC @ 400 V +18V, -8V 318 pF @ 400 V - 41W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount 8-PQFN (5x6), Power56
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