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FETs, MOSFETs

Mfr. Part #	Availability	Price	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
HUFA75329S3ST MOSFET N-CH 55V 49A D2PAK Fairchild Semiconductor	7,192	-	RFQ	Datasheet	UltraFET™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	55 V	49A (Tc)	10V	24mOhm @ 49A, 10V	4V @ 250µA	75 nC @ 20 V	±20V	1060 pF @ 25 V	-	128W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TO-263 (D2PAK)
2SJ645-TL-E MOSFET P-CH onsemi	7,000	-	RFQ	Datasheet	*	-	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
G6N02L MOSFET N-CH 20V 6A SOT-23-3L Goford Semiconductor	6,758	-	RFQ	Datasheet	TrenchFET®	TO-236-3, SC-59, SOT-23-3	Cut Tape (CT)	Active	N-Channel	MOSFET (Metal Oxide)	20 V	6A (Tc)	2.5V, 4.5V	11.3mOhm @ 3A, 4.5V	900mV @ 250µA	12.5 nC @ 10 V	±12V	1151 pF @ 15 V	-	1W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-23-3
FQP2N50 MOSFET N-CH 500V 2.1A TO220-3 Fairchild Semiconductor	6,030	-	RFQ	Datasheet	QFET®	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	500 V	2.1A (Tc)	10V	5.3Ohm @ 1.05A, 10V	5V @ 250µA	8 nC @ 10 V	±30V	230 pF @ 25 V	-	55W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220-3
CPH6339-TL-E MOSFET P-CH Sanyo	6,028	-	RFQ	-	*	-	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
ECH8607-TL-E N-CHANNEL SILICON MOSFET onsemi	6,000	-	RFQ	-	*	-	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
CPH6328-TL-E MOSFET P-CH Sanyo	5,992	-	RFQ	-	*	-	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRLML6344TR MOSFET N-CH 30V 5A SOT23 UMW	5,910	-	RFQ	Datasheet	*	TO-236-3, SC-59, SOT-23-3	Cut Tape (CT)	Active	N-Channel	MOSFET (Metal Oxide)	30 V	5A (Ta)	2.5V, 4.5V	29mOhm @ 5A, 4.5V	1.1V @ 10µA	-	±12V	-	-	1.3W (Ta)	-55°C ~ 155°C (TJ)	-	-	Surface Mount	SOT-23-3 (TO-236)
FQB3N30TM MOSFET N-CH 300V 3.2A D2PAK Fairchild Semiconductor	5,868	-	RFQ	Datasheet	QFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	300 V	3.2A (Tc)	10V	2.2Ohm @ 1.6A, 10V	5V @ 250µA	7 nC @ 10 V	±30V	230 pF @ 25 V	-	3.13W (Ta), 55W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263 (D2PAK)
AO3423A SOT-23 POWER MOSFETS ROHS UMW	5,810	-	RFQ	Datasheet	UMW	TO-236-3, SC-59, SOT-23-3	Cut Tape (CT)	Active	P-Channel	MOSFET (Metal Oxide)	20 V	2A (Ta)	2.5V, 4.5V	120mOhm @ 2.5A, 4.5V	1V @ 250µA	3.2 nC @ 4.5 V	±12V	325 pF @ 4.5 V	-	1.4W (Ta)	150°C (TJ)	-	-	Surface Mount	SOT-23-3L
IRLML0040TR MOSFET N-CH 40V 3.6A SOT23 UMW	5,800	-	RFQ	Datasheet	*	TO-236-3, SC-59, SOT-23-3	Cut Tape (CT)	Active	N-Channel	MOSFET (Metal Oxide)	40 V	3.6A (Ta)	4.5V, 10V	56mOhm @ 3.6A, 10V	2.5V @ 25µA	-	±16V	-	-	1.3W (Ta)	-55°C ~ 155°C (TJ)	-	-	Surface Mount	SOT-23-3 (TO-236)
HUF75332S3S N-CHANNEL POWER MOSFET Harris Corporation	5,576	-	RFQ	Datasheet	UltraFET™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	55 V	52A (Tc)	10V	19mOhm @ 52A, 10V	4V @ 250µA	85 nC @ 20 V	±20V	1300 pF @ 25 V	-	110W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TO-263 (D2PAK)
SI2323DS MOSFET P-CH 20V 3.7A SOT23-3 UMW	5,574	-	RFQ	Datasheet	*	TO-236-3, SC-59, SOT-23-3	Cut Tape (CT)	Active	P-Channel	MOSFET (Metal Oxide)	20 V	3.7A (Ta)	1.8V, 4.5V	39mOhm @ 4.7A, 4.5V	1V @ 250µA	-	±8V	-	-	750mW (Ta)	-55°C ~ 155°C (TJ)	-	-	Surface Mount	SOT-23-3 (TO-236)
FQP5N30 MOSFET N-CH 300V 5.4A TO220-3 Fairchild Semiconductor	5,270	-	RFQ	Datasheet	QFET®	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	300 V	5.4A (Tc)	10V	900mOhm @ 2.7A, 10V	5V @ 250µA	13 nC @ 10 V	±30V	430 pF @ 25 V	-	70W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220-3
HAT1142R02-EL-E P-CHANNEL POWER MOSFET Renesas Electronics Corporation	5,000	-	RFQ	-	*	-	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SI2319A MOSFET P-CH 40V 4.4A SOT23-3 UMW	5,000	-	RFQ	Datasheet	-	TO-236-3, SC-59, SOT-23-3	Cut Tape (CT)	Active	P-Channel	MOSFET (Metal Oxide)	40 V	4.4A (Ta)	4.5V, 10V	70mOhm @ 4.4A, 10V	3V @ 250µA	-	±20V	-	-	1.25W (Ta)	-55°C ~ 155°C (TJ)	-	-	Surface Mount	SOT-23-3 (TO-236)
G02P06 P60V,RD(MAX)<190M@-10V,RD(MAX)<2 Goford Semiconductor	4,824	-	RFQ	Datasheet	TrenchFET®	TO-236-3, SC-59, SOT-23-3	Cut Tape (CT)	Active	P-Channel	MOSFET (Metal Oxide)	60 V	1.6A (Tc)	4.5V, 10V	190mOhm @ 1A, 10V	2.5V @ 250µA	11.3 nC @ 10 V	±20V	566 pF @ 30 V	-	1.5W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-23
IRF823 N-CHANNEL POWER MOSFET Harris Corporation	4,568	-	RFQ	Datasheet	-	TO-220-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	450 V	2.2A (Tc)	10V	4Ohm @ 1.4A, 10V	4V @ 250µA	19 nC @ 10 V	±20V	360 pF @ 25 V	-	50W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220AB
BUK9614-55A,118 MOSFET N-CH 55V 73A D2PAK NXP USA Inc.	4,546	-	RFQ	-	*	-	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
FQD4N50TF MOSFET N-CH 500V 2.6A DPAK Fairchild Semiconductor	4,514	-	RFQ	Datasheet	QFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	500 V	2.6A (Tc)	10V	2.7Ohm @ 1.3A, 10V	5V @ 250µA	13 nC @ 10 V	±30V	460 pF @ 25 V	-	2.5W (Ta), 45W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-252 (DPAK)

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