Chearf Electronics Co.,Ltd - Your Trusted Partner in Electronic Components Chearf Electronics Co.,Ltd[email protected]
Follow us :

FETs, MOSFETs

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
NVBG040N120M3S

NVBG040N120M3S

SILICON CARBIDE (SIC) MOSFET-ELI

onsemi

1,520
RFQ
NVBG040N120M3S

Datasheet

- TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 1200 V 57A (Tc) 18V 54mOhm @ 20A, 18V 4.4V @ 10mA 75 nC @ 18 V +22V, -10V 1700 pF @ 800 V - 263W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount D2PAK-7
AIMZHN120R040M1TXKSA1

AIMZHN120R040M1TXKSA1

SIC_DISCRETE

Infineon Technologies

480
RFQ
AIMZHN120R040M1TXKSA1

Datasheet

- TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 55A (Tc) 18V, 20V 50mOhm @ 20A, 20V 5.1V @ 6.4mA 43 nC @ 20 V +23V, -5V 1264 pF @ 800 V - 268W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole PG-TO247-4-14
G3F25MT12J-TR

G3F25MT12J-TR

1200V 25M TO-263-7 G3F SIC MOSFE

GeneSiC Semiconductor

1,600
RFQ

-

- TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 87A (Tc) 18V 34mOhm @ 34A, 18V 4.3V @ 24mA 128 nC @ 18 V +22V, -10V 3325 pF @ 800 V - 362W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount TO-263-7
IMT40R011M2HXTMA1

IMT40R011M2HXTMA1

SIC-MOS

Infineon Technologies

3,854
RFQ
IMT40R011M2HXTMA1

Datasheet

CoolSiC™ 8-PowerSFN Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 400 V 13.4A (Ta), 144A (Tc) 15V, 18V 14.4mOhm @ 37.1A, 18V 5.6V @ 13.3mA 85 nC @ 18 V +23V, -7V 3770 pF @ 200 V - 3.8W (Ta), 429W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-HSOF-8-2
SCT3030ARC15

SCT3030ARC15

650V, 70A, 4-PIN THD, TRENCH-STR

Rohm Semiconductor

772
RFQ
SCT3030ARC15

Datasheet

- TO-247-4 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 70A (Tc) 18V 39mOhm @ 27A, 18V 5.6V @ 13.3mA 104 nC @ 18 V +22V, -4V 1526 pF @ 500 V - 262W 175°C (TJ) - - Through Hole TO-247-4L
IMZC120R017M2HXKSA1

IMZC120R017M2HXKSA1

IMZC120R017M2HXKSA1

Infineon Technologies

480
RFQ
IMZC120R017M2HXKSA1

Datasheet

CoolSiC™ TO-247-4 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 97A (Tc) 15V, 18V 17mOhm @ 40A, 18V 5.1V @ 12.7mA 89 nC @ 18 V +23V, -7V 2910 pF @ 800 V - 382W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO247-4-17
NVH4L027N65S3F

NVH4L027N65S3F

SF3 FRFET AUTO 27MOHM TO-247-4L

onsemi

1,598
RFQ
NVH4L027N65S3F

Datasheet

SuperFET® III, FRFET® TO-247-4 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 75A (Tc) 10V 27.4mOhm @ 35A, 10V 5V @ 3mA 227 nC @ 10 V ±30V 7780 pF @ 400 V - 595W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247-4L
C3M0045065J1-TR

C3M0045065J1-TR

SIC, MOSFET 45M, 650V TO-263-7XL

Wolfspeed, Inc.

1,460
RFQ
C3M0045065J1-TR

Datasheet

C3M™ TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 650 V 47A (Tc) 15V 60mOhm @ 17.6A, 15V 3.6V @ 4.84mA 61 nC @ 15 V +19V, -8V 1621 pF @ 400 V - 147W (Tc) -40°C ~ 150°C (TJ) - - Surface Mount TO-263-7
G3F25MT12K

G3F25MT12K

1200V 25M TO-247-4 G3F SIC MOSFE

GeneSiC Semiconductor

1,190
RFQ

-

- - Tube Active - - - - - - - - - - - - - - - - -
SCT3030ARHRC15

SCT3030ARHRC15

650V, 70A, 4-PIN THD, TRENCH-STR

Rohm Semiconductor

896
RFQ
SCT3030ARHRC15

Datasheet

- TO-247-4 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 70A (Tc) 18V 39mOhm @ 27A, 18V 5.6V @ 13.3mA 104 nC @ 18 V +22V, -4V 1526 pF @ 500 V - 262W 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247-4L
AIMBG120R030M1XTMA1

AIMBG120R030M1XTMA1

SIC_DISCRETE

Infineon Technologies

3,416
RFQ
AIMBG120R030M1XTMA1

Datasheet

- TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 1200 V 70A (Tc) 18V, 20V 38mOhm @ 27A, 20V 5.1V @ 8.6mA 57 nC @ 20 V +23V, -5V 1738 pF @ 800 V - 333W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PG-TO263-7-12
SCT3040KRC15

SCT3040KRC15

1200V, 55A, 4-PIN THD, TRENCH-ST

Rohm Semiconductor

740
RFQ
SCT3040KRC15

Datasheet

- TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 55A (Tj) 18V 52mOhm @ 20A, 18V 5.6V @ 10mA 107 nC @ 18 V +22V, -4V 1337 pF @ 800 V - 262W 175°C (TJ) - - Through Hole TO-247-4L
AIMZA75R020M1HXKSA1

AIMZA75R020M1HXKSA1

AUTOMOTIVE_SICMOS

Infineon Technologies

380
RFQ
AIMZA75R020M1HXKSA1

Datasheet

CoolSiC™ TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 750 V 75A (Tj) 15V, 20V 18mOhm @ 32.5A, 20V 5.6V @ 11.7mA 67 nC @ 18 V +23V, -5V 2217 pF @ 500 V - 278W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole PG-TO247-4
NSF030120D7A0J

NSF030120D7A0J

NSF030120D7A0/SOT8070/TO263-7L

Nexperia USA Inc.

1,600
RFQ

-

- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
NSF030120L3A0Q

NSF030120L3A0Q

NSF030120L3A0/SOT429-2/TO247-3

Nexperia USA Inc.

900
RFQ
NSF030120L3A0Q

Datasheet

- - Tube Active - - - - - - - - - - - - - - - - -
IMBG65R015M2HXTMA1

IMBG65R015M2HXTMA1

SILICON CARBIDE MOSFET

Infineon Technologies

2,000
RFQ
IMBG65R015M2HXTMA1

Datasheet

CoolSiC™ Gen 2 TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 650 V 115A (Tc) 15V, 20V 18mOhm @ 64.2A, 18V 5.6V @ 13mA 79 nC @ 18 V +23V, -7V 2792 pF @ 400 V - 416W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-7-12
SCT3040KRHRC15

SCT3040KRHRC15

1200V, 55A, 4-PIN THD, TRENCH-ST

Rohm Semiconductor

790
RFQ
SCT3040KRHRC15

Datasheet

- TO-247-4 Tube Active N-Channel MOSFET (Metal Oxide) 1200 V 55A (Tc) 18V 52mOhm @ 20A, 18V 5.6V @ 10mA 107 nC @ 18 V +22V, -4V 1337 pF @ 800 V - 262W 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247-4L
NSF030120L4A0Q

NSF030120L4A0Q

NSF030120L4A0/SOT8071/TO247-4L

Nexperia USA Inc.

900
RFQ

-

- - Tube Active - - - - - - - - - - - - - - - - -
NSF040120L3A0Q

NSF040120L3A0Q

SIC MOSFET / 40MOHM / 1200V / TO

Nexperia USA Inc.

824
RFQ
NSF040120L3A0Q

Datasheet

- - Tube Active - - - - - - - - - - - - - - - - -
AOK033V120X2Q

AOK033V120X2Q

1200V SILICON CARBIDE MOSFET

Alpha & Omega Semiconductor Inc.

418
RFQ
AOK033V120X2Q

Datasheet

- TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 68A (Tc) 15V 43mOhm @ 20A, 15V 2.8V @ 17.5mA 104 nC @ 15 V +15V, -5V 2908 pF @ 800 V - 300W (Ta) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247
Total 36322 Record«Prev1... 325326327328329330331332...1817Next»
Chearf Electronics Co.,Ltd Chearf Electronics Co.,Ltd Chearf Electronics Co.,Ltd Chearf Electronics Co.,Ltd Chearf Electronics Co.,Ltd Chearf Electronics Co.,Ltd
Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER