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FETs, MOSFETs

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
IPZ60R040C7XKSA1

IPZ60R040C7XKSA1

MOSFET N-CH 600V 50A TO247-4

Infineon Technologies

1,282
RFQ
IPZ60R040C7XKSA1

Datasheet

CoolMOS™ C7 TO-247-4 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 50A (Tc) 10V 40mOhm @ 24.9A, 10V 4V @ 1.24mA 107 nC @ 10 V ±20V 4340 pF @ 400 V - 227W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO247-4
G3R60MT07D

G3R60MT07D

750V 60M TO-247-3 G3R SIC MOSFET

GeneSiC Semiconductor

3,678
RFQ
G3R60MT07D

Datasheet

G3R™ TO-247-3 Tube Active - SiCFET (Silicon Carbide) 750 V - - - - - +20V, -10V - - - - - - Through Hole TO-247-3
IXTH6N50D2

IXTH6N50D2

MOSFET N-CH 500V 6A TO247

Littelfuse Inc.

440
RFQ
IXTH6N50D2

Datasheet

Depletion TO-247-3 Tube Active N-Channel, Depletion Mode MOSFET (Metal Oxide) 500 V 6A (Tc) - 500mOhm @ 3A, 0V - 96 nC @ 5 V ±20V 2800 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247 (IXTH)
AUIRF7769L2TR

AUIRF7769L2TR

MOSFET N-CH 100V 375A DIRECTFET

Infineon Technologies

15,634
RFQ
AUIRF7769L2TR

Datasheet

HEXFET® DirectFET™ Isometric L8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 375A (Tc) 10V 3.5mOhm @ 74A, 10V 4V @ 250µA 300 nC @ 10 V ±20V 11560 pF @ 25 V - 3.3W (Ta), 125W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount DirectFET™ Isometric L8
IXTQ69N30P

IXTQ69N30P

MOSFET N-CH 300V 69A TO3P

Littelfuse Inc.

586
RFQ
IXTQ69N30P

Datasheet

Polar TO-3P-3, SC-65-3 Tube Active N-Channel MOSFET (Metal Oxide) 300 V 69A (Tc) 10V 49mOhm @ 500mA, 10V 5V @ 250µA 180 nC @ 10 V ±20V 4960 pF @ 25 V - 500W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-3P
IPW65R035CFD7AXKSA1

IPW65R035CFD7AXKSA1

MOSFET N-CH 650V 63A TO247-3-41

Infineon Technologies

2,296
RFQ
IPW65R035CFD7AXKSA1

Datasheet

CoolMOS™ CFD7A TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 63A (Tc) 10V 35mOhm @ 35.8A, 10V 4.5V @ 1.79mA 145 nC @ 10 V ±20V 7149 pF @ 400 V - 305W (Tc) -40°C ~ 150°C (TJ) Automotive AEC-Q101 Through Hole PG-TO247-3-41
IXTA60N20X4

IXTA60N20X4

MOSFET ULTRA X4 200V 60A TO-263

Littelfuse Inc.

1,502
RFQ
IXTA60N20X4

Datasheet

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active N-Channel MOSFET (Metal Oxide) 200 V 60A (Tc) 10V 21mOhm @ 30A, 10V 4.5V @ 250µA 33 nC @ 10 V ±20V 2450 pF @ 25 V - 250W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263 (IXTA)
G3R60MT07K

G3R60MT07K

750V 60M TO-247-4 G3R SIC MOSFET

GeneSiC Semiconductor

2,302
RFQ
G3R60MT07K

Datasheet

G3R™ TO-247-4 Tube Active - SiCFET (Silicon Carbide) 750 V - - - - - +20V, -10V - - - - - - Through Hole TO-247-4
SPW35N60C3FKSA1

SPW35N60C3FKSA1

MOSFET N-CH 650V 34.6A TO247-3

Infineon Technologies

262
RFQ
SPW35N60C3FKSA1

Datasheet

CoolMOS™ TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 34.6A (Tc) 10V 100mOhm @ 21.9A, 10V 3.9V @ 1.9mA 200 nC @ 10 V ±20V 4500 pF @ 25 V - 313W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO247-3-1
SIHG47N60E-GE3

SIHG47N60E-GE3

MOSFET N-CH 600V 47A TO247AC

Vishay Siliconix

748
RFQ
SIHG47N60E-GE3

Datasheet

- TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 47A (Tc) 10V 64mOhm @ 24A, 10V 4V @ 250µA 220 nC @ 10 V ±30V 9620 pF @ 100 V - 357W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247AC
UF4C120053K3S

UF4C120053K3S

1200V/53MOHM, SIC, FAST CASCODE,

Qorvo

1,058
RFQ
UF4C120053K3S

Datasheet

- TO-247-3 Tube Active N-Channel SiCFET (Cascode SiCJFET) 1200 V 34A (Tc) 12V 67mOhm @ 20A, 12V 6V @ 10mA 37.8 nC @ 15 V ±20V 1370 pF @ 800 V - 263W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247-3
SIHG050N60E-GE3

SIHG050N60E-GE3

MOSFET N-CH 600V 51A TO247AC

Vishay Siliconix

784
RFQ
SIHG050N60E-GE3

Datasheet

E TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 51A (Tc) 10V 50mOhm @ 23A, 10V 5V @ 250µA 130 nC @ 10 V ±30V 3459 pF @ 100 V - 278W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247AC
NVH4L080N120SC1

NVH4L080N120SC1

SICFET N-CH 1200V 29A TO247-4

onsemi

694
RFQ
NVH4L080N120SC1

Datasheet

- TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 29A (Tc) 20V 110mOhm @ 20A, 20V 4.3V @ 5mA 56 nC @ 20 V +25V, -15V 1670 pF @ 800 V - 170W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247-4L
IXFK140N20P

IXFK140N20P

MOSFET N-CH 200V 140A TO264AA

Littelfuse Inc.

700
RFQ
IXFK140N20P

Datasheet

HiPerFET™, Polar TO-264-3, TO-264AA Tube Active N-Channel MOSFET (Metal Oxide) 200 V 140A (Tc) 10V, 15V 18mOhm @ 70A, 10V 5V @ 4mA 240 nC @ 10 V ±20V 7500 pF @ 25 V - 830W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-264AA (IXFK)
IXFH6N120P

IXFH6N120P

MOSFET N-CH 1200V 6A TO247AD

Littelfuse Inc.

902
RFQ
IXFH6N120P

Datasheet

HiPerFET™, Polar TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 1200 V 6A (Tc) 10V 2.4Ohm @ 500mA, 10V 5V @ 1mA 92 nC @ 10 V ±30V 2830 pF @ 25 V - 250W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247AD (IXFH)
STP34NM60N

STP34NM60N

MOSFET N-CH 600V 29A TO220-3

STMicroelectronics

534
RFQ
STP34NM60N

Datasheet

MDmesh™ II TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 29A (Tc) 10V 105mOhm @ 14.5A, 10V 4V @ 250µA 80 nC @ 10 V ±25V 2722 pF @ 100 V - 250W (Tc) 150°C (TJ) - - Through Hole TO-220
SCT2280KEGC11

SCT2280KEGC11

1200V, 14A, THD, SILICON-CARBIDE

Rohm Semiconductor

3,328
RFQ
SCT2280KEGC11

Datasheet

- TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 14A (Tc) 18V 364mOhm @ 4A, 18V 4V @ 1.4mA 36 nC @ 18 V +22V, -6V 667 pF @ 800 V - 108W (Tc) 175°C - - Through Hole TO-247N
STW12N120K5

STW12N120K5

MOSFET N-CH 1200V 12A TO247

STMicroelectronics

2,344
RFQ
STW12N120K5

Datasheet

MDmesh™ K5 TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 1200 V 12A (Tc) 10V 690mOhm @ 6A, 10V 5V @ 100µA 44.2 nC @ 10 V ±30V 1370 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247-3
IMBG65R048M1HXTMA1

IMBG65R048M1HXTMA1

SILICON CARBIDE MOSFET PG-TO263-

Infineon Technologies

1,730
RFQ
IMBG65R048M1HXTMA1

Datasheet

CoolSiC™ TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 650 V 45A (Tc) 18V 64mOhm @ 20.1A, 18V 5.7V @ 6mA 33 nC @ 18 V +23V, -5V 1118 pF @ 400 V - 183W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-7-12
IXTH110N25T

IXTH110N25T

MOSFET N-CH 250V 110A TO247

Littelfuse Inc.

1,198
RFQ
IXTH110N25T

Datasheet

Trench TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 250 V 110A (Tc) 10V 24mOhm @ 55A, 10V 4.5V @ 1mA 157 nC @ 10 V ±20V 9400 pF @ 25 V - 694W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247 (IXTH)
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