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Bridge Rectifiers

Mfr. Part #	Availability	Price	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Diode Type	Technology	Voltage - Peak Reverse (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Current - Reverse Leakage @ Vr	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
KBP305G C2G BRIDGE RECT 1PHASE 600V 3A KBP Taiwan Semiconductor Corporation	12,186	-	RFQ	Datasheet	-	4-SIP, KBP	Tube	Obsolete	Single Phase	Standard	600 V	3 A	1.1 V @ 3 A	10 µA @ 600 V	-55°C ~ 150°C (TJ)	-	-	Through Hole	KBP
KBP307G C2 BRIDGE RECT 1PHASE 1KV 3A KBP Taiwan Semiconductor Corporation	4,892	-	RFQ	Datasheet	-	4-SIP, KBP	Tube	Obsolete	Single Phase	Standard	1 kV	3 A	1.1 V @ 3 A	10 µA @ 1000 V	-55°C ~ 150°C (TJ)	-	-	Through Hole	KBP
KBP307G C2G BRIDGE RECT 1PHASE 1KV 3A KBP Taiwan Semiconductor Corporation	15,902	-	RFQ	Datasheet	-	4-SIP, KBP	Tube	Obsolete	Single Phase	Standard	1 kV	3 A	1.1 V @ 3 A	10 µA @ 1000 V	-55°C ~ 150°C (TJ)	-	-	Through Hole	KBP
CBR1F-010 BRIDGE RECT 1P 100V 1.5A A CASE Central Semiconductor Corp	12,834	-	RFQ	Datasheet	-	4-Circular, A Case	Box	Obsolete	Single Phase	Standard	100 V	1.5 A	1.3 V @ 1 A	10 µA @ 100 V	-65°C ~ 150°C (TJ)	-	-	Through Hole	A Case
CBR2-010 BRIDGE RECT 1P 100V 2A A CASE Central Semiconductor Corp	12,464	-	RFQ	Datasheet	-	4-Circular, A Case	Box	Obsolete	Single Phase	Standard	100 V	2 A	1.1 V @ 2 A	10 µA @ 100 V	-65°C ~ 150°C (TJ)	-	-	Through Hole	A Case
CBR2-020 BRIDGE RECT 1P 200V 2A A CASE Central Semiconductor Corp	19,822	-	RFQ	Datasheet	-	4-Circular, A Case	Box	Obsolete	Single Phase	Standard	200 V	2 A	1.1 V @ 2 A	10 µA @ 200 V	-65°C ~ 150°C (TJ)	-	-	Through Hole	A Case
CBR2-040 BRIDGE RECT 1P 400V 2A A CASE Central Semiconductor Corp	9,718	-	RFQ	Datasheet	-	4-Circular, A Case	Box	Obsolete	Single Phase	Standard	400 V	2 A	1.1 V @ 2 A	10 µA @ 400 V	-65°C ~ 150°C (TJ)	-	-	Through Hole	A Case
CBR2-080 BRIDGE RECT 1P 800V 2A A CASE Central Semiconductor Corp	17,124	-	RFQ	Datasheet	-	4-Circular, A Case	Box	Obsolete	Single Phase	Standard	800 V	2 A	1.1 V @ 2 A	10 µA @ 800 V	-65°C ~ 150°C (TJ)	-	-	Through Hole	A Case
CBR2-100 BRIDGE RECT 1PHASE 1KV 2A A CASE Central Semiconductor Corp	4,468	-	RFQ	Datasheet	-	4-Circular, A Case	Box	Obsolete	Single Phase	Standard	1 kV	2 A	1.1 V @ 2 A	10 µA @ 1000 V	-65°C ~ 150°C (TJ)	-	-	Through Hole	A Case
G3SBA60-5410M3/45 BRIDGE RECT 1PHASE 600V 2.3A GBU Vishay General Semiconductor - Diodes Division	14,968	-	RFQ	Datasheet	-	4-SIP, GBU	Tube	Obsolete	Single Phase	Standard	600 V	2.3 A	1 V @ 2 A	5 µA @ 600 V	-55°C ~ 150°C (TJ)	-	-	Through Hole	GBU
G3SBA60-5410M3/51 BRIDGE RECT 1PHASE 600V 2.3A GBU Vishay General Semiconductor - Diodes Division	9,442	-	RFQ	Datasheet	-	4-SIP, GBU	Tube	Obsolete	Single Phase	Standard	600 V	2.3 A	1 V @ 2 A	5 µA @ 600 V	-55°C ~ 150°C (TJ)	-	-	Through Hole	GBU
GBL06-3E3/51 BRIDGE RECT 1PHASE 600V 3A GBL Vishay General Semiconductor - Diodes Division	14,300	-	RFQ	Datasheet	-	4-SIP, GBL	Tube	Obsolete	Single Phase	Standard	600 V	3 A	1 V @ 4 A	5 µA @ 600 V	-55°C ~ 150°C (TJ)	-	-	Through Hole	GBL
GBL06L-5303E3/51 BRIDGE RECT 1PHASE 600V 3A GBL Vishay General Semiconductor - Diodes Division	7,180	-	RFQ	Datasheet	-	4-SIP, GBL	Tube	Obsolete	Single Phase	Standard	600 V	3 A	1 V @ 4 A	5 µA @ 600 V	-55°C ~ 150°C (TJ)	-	-	Through Hole	GBL
GBL06L-5305E3/45 BRIDGE RECT 1PHASE 600V 3A GBL Vishay General Semiconductor - Diodes Division	4,998	-	RFQ	Datasheet	-	4-SIP, GBL	Tube	Obsolete	Single Phase	Standard	600 V	3 A	1 V @ 4 A	5 µA @ 600 V	-55°C ~ 150°C (TJ)	-	-	Through Hole	GBL
GBL06L-5306E3/51 BRIDGE RECT 1PHASE 600V 3A GBL Vishay General Semiconductor - Diodes Division	15,454	-	RFQ	Datasheet	-	4-SIP, GBL	Tube	Obsolete	Single Phase	Standard	600 V	3 A	1 V @ 4 A	5 µA @ 600 V	-55°C ~ 150°C (TJ)	-	-	Through Hole	GBL
GBL06L-5308E3/51 BRIDGE RECT 1PHASE 600V 3A GBL Vishay General Semiconductor - Diodes Division	10,274	-	RFQ	Datasheet	-	4-SIP, GBL	Tube	Obsolete	Single Phase	Standard	600 V	3 A	1 V @ 4 A	5 µA @ 600 V	-55°C ~ 150°C (TJ)	-	-	Through Hole	GBL
GBL06L-5600E3/51 BRIDGE RECT 1PHASE 600V 3A GBL Vishay General Semiconductor - Diodes Division	17,008	-	RFQ	Datasheet	-	4-SIP, GBL	Tube	Obsolete	Single Phase	Standard	600 V	3 A	1 V @ 4 A	5 µA @ 600 V	-55°C ~ 150°C (TJ)	-	-	Through Hole	GBL
GBL06L-5701E3/51 BRIDGE RECT 1PHASE 600V 3A GBL Vishay General Semiconductor - Diodes Division	18,222	-	RFQ	Datasheet	-	4-SIP, GBL	Tube	Obsolete	Single Phase	Standard	600 V	3 A	1 V @ 4 A	5 µA @ 600 V	-55°C ~ 150°C (TJ)	-	-	Through Hole	GBL
GBL06L-6177E3/51 BRIDGE RECT 1PHASE 600V 3A GBL Vishay General Semiconductor - Diodes Division	4,090	-	RFQ	Datasheet	-	4-SIP, GBL	Tube	Obsolete	Single Phase	Standard	600 V	3 A	1 V @ 4 A	5 µA @ 600 V	-55°C ~ 150°C (TJ)	-	-	Through Hole	GBL
GBL06L-6832E3/45 BRIDGE RECT 1PHASE 600V 3A GBL Vishay General Semiconductor - Diodes Division	9,782	-	RFQ	Datasheet	-	4-SIP, GBL	Tube	Obsolete	Single Phase	Standard	600 V	3 A	1 V @ 4 A	5 µA @ 600 V	-55°C ~ 150°C (TJ)	-	-	Through Hole	GBL

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